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1. 发明申请

US20080166851A1 METAL-INSULATOR-METAL (MIM) CAPACITOR AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：金属绝缘子金属（MIM）电容器及其制造方法
公开(公告)号：US20080166851A1
公开(公告)日：2008-07-10
申请号：US12030476
申请日：2008-02-13
申请人： Uk-Sun HONG , Sang-Rok Hah , Hong-Seong Son
发明人： Uk-Sun HONG , Sang-Rok Hah , Hong-Seong Son
IPC分类号： H01L21/02
CPC分类号： H01G4/33 , H01L21/31144 , H01L23/5223 , H01L28/40 , H01L2924/0002 , H01L2924/00
摘要： The present invention discloses a metal-insulator-metal (MIM) capacitor and a method for fabricating the MIM capacitor, comprising forming a bottom insulation layer, a capacitor electrode material layer, and a hard mask material layer on a semiconductor substrate having a metal wire thereon; forming a hard mask by etching the hard mask material layer using a photosensitive mask; forming a capacitor electrode by etching the capacitor electrode material layer using the hard mask as an etching mask; and forming a top insulation layer on an entire surface of the semiconductor.
摘要翻译：本发明公开了一种金属绝缘体金属（MIM）电容器及其制造方法，包括在具有金属线的半导体基板上形成底部绝缘层，电容器电极材料层和硬掩模材料层上; 通过使用感光掩模蚀刻硬掩模材料层来形成硬掩模; 通过使用硬掩模作为蚀刻掩模来蚀刻电容器电极材料层来形成电容器电极; 以及在半导体的整个表面上形成顶部绝缘层。

2. 发明申请

US20080102409A1 INDUCTOR FOR A SYSTEM-ON-A-CHIP AND A METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：一种片上系统的电感器及其制造方法
公开(公告)号：US20080102409A1
公开(公告)日：2008-05-01
申请号：US11968787
申请日：2008-01-03
申请人： Hyo-Jong LEE , Hong-Seong SON , Ui-Hyoung LEE , Sang-Rok HAH , In-Ryong KIM , Yi-Gwon Kim
发明人： Hyo-Jong LEE , Hong-Seong SON , Ui-Hyoung LEE , Sang-Rok HAH , In-Ryong KIM , Yi-Gwon Kim
IPC分类号： B05D5/12 , C25D5/02
CPC分类号： H01L28/10 , H01F41/041 , H01F2017/0046 , H01L23/5227 , H01L27/08 , H01L2924/0002 , H01L2924/00
摘要： An inductor for a system-on-a-chip and a method for manufacturing the inductor are disclosed. The inductor comprises a conductive line formed by connecting a plurality of conductive patterns grown from a seed layer formed on a lower wiring. The method comprises using an electrolytic plating process or an electroless plating process to grow the plurality of adjacent conductive patterns from the seed layer until they become connected. The method also enables adjusting the height and width of the conductive line to desired levels.
摘要翻译：公开了一种用于片上系统的电感器和用于制造电感器的方法。电感器包括通过连接从形成在下布线上的晶种层生长的多个导电图案而形成的导电线。该方法包括使用电解电镀工艺或无电镀处理，以从种子层生长多个相邻的导电图案直到它们连接。该方法还能够将导线的高度和宽度调整到所希望的水平。

3. 发明申请

US20070155178A1 Slurry for chemical mechanical polishing process and method of manufacturing semiconductor device using the same 审中-公开
标题翻译：用于化学机械抛光工艺的浆料及使用其制造半导体器件的方法
公开(公告)号：US20070155178A1
公开(公告)日：2007-07-05
申请号：US11712931
申请日：2007-03-01
申请人： Young-rae Park , Jung-yup Kim , Bo-un Yoon , Kwang-bok Kim , Jae-phill Boo , Jong-won Lee , Sang-rok Hah , Kyung-hyun Kim , Chang-ki Hong
发明人： Young-rae Park , Jung-yup Kim , Bo-un Yoon , Kwang-bok Kim , Jae-phill Boo , Jong-won Lee , Sang-rok Hah , Kyung-hyun Kim , Chang-ki Hong
IPC分类号： H01L21/306 , H01L21/461 , B44C1/22 , C23F1/00 , H01L21/302
CPC分类号： H01L21/76224 , B24B37/044 , C09G1/02 , H01L21/31053
摘要： A slurry composition useful for chemical mechanical polishing of the surface of a material layer, e.g., a silicon oxide layer, is disclosed. A first material surface which is exposed to the slurry exhibits hydrophilicity, while a second material layer, e.g., a polysilicon layer, the surface of which is also exposed to the slurry, exhibits hydrophobicity, and accordingly acts as a polishing stopping layer. The slurry composition consists essentially of water, abrasive grains, and a polymer additive having both hydrophilic and hydrophobic functional groups.
摘要翻译：公开了一种用于材料层表面例如氧化硅层的化学机械抛光的浆料组合物。暴露于浆料的第一材料表面显示出亲水性，而第二材料层，例如其表面也暴露于浆料的多晶硅层，表现出疏水性，因此用作抛光停止层。浆料组合物基本上由水，磨料颗粒和具有亲水和疏水官能团的聚合物添加剂组成。

4. 发明授权

US07183226B2 Method of forming a trench for use in manufacturing a semiconductor device 有权
标题翻译：形成用于制造半导体器件的沟槽的方法
公开(公告)号：US07183226B2
公开(公告)日：2007-02-27
申请号：US10673873
申请日：2003-09-30
申请人： Sung-Bae Lee , Sang-Rok Hah , Hong-Seong Son
发明人： Sung-Bae Lee , Sang-Rok Hah , Hong-Seong Son
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L27/10885 , H01L21/76229 , H01L21/76232 , H01L29/66181
摘要： A method for use in manufacturing a semiconductor device includes forming a photoresist pattern on a substrate, performing first etching process in which an initial trench is formed using the photoresist pattern as a mask, and performing second distinct etching process to enlarge the initial trench. Thus, the initial trench can be formed using the photoresist pattern having a stable structure. Thereafter, the trench is enlarged using an etching solution having a composition based on the material in which the initial trench is formed, e.g., a silicon substrate or an insulation film. Therefore, a metal wiring, an isolation film or a contact can be formed in the enlarged trench to desired dimensions.
摘要翻译：一种用于制造半导体器件的方法包括在衬底上形成光致抗蚀剂图案，执行第一蚀刻工艺，其中使用光致抗蚀剂图案作为掩模形成初始沟槽，并且执行第二不同的蚀刻工艺以扩大初始沟槽。因此，可以使用具有稳定结构的光致抗蚀剂图案来形成初始沟槽。此后，使用具有基于其中形成初始沟槽的材料的组成的蚀刻溶液（例如硅衬底或绝缘膜）来扩大沟槽。因此，可以在扩大的沟槽中形成金属布线，隔离膜或接触件到期望的尺寸。

5. 发明授权

US07026242B2 Method for filling a hole with a metal 有权
标题翻译：用金属填充孔的方法
公开(公告)号：US07026242B2
公开(公告)日：2006-04-11
申请号：US10802411
申请日：2004-03-16
申请人： Hong-Seong Son , Sang-Rok Hah , Il-Goo Kim , Jun-Hwan Oh
发明人： Hong-Seong Son , Sang-Rok Hah , Il-Goo Kim , Jun-Hwan Oh
IPC分类号： H01L21/4763
CPC分类号： H01L21/2885 , H01L21/76877
摘要： In a method for filling a hole with a metal, an insulating layer, a first mask layer and a second mask layer are successively formed on a semiconductor substrate. The first and second mask layers are etched using a photoresist pattern to form first and second masks. The first mask layer pattern is selectively etched using an etchant, the first mask layer pattern having a higher etching selectivity than the second layer pattern with respect to the etchant, to form a third mask layer pattern having a broadened opening. The insulating layer is etched using the second mask to form a hole in the insulating layer. A metal layer is formed in the hole and the third opening. The metal layer is planarized to form a metal plug buried in the hole without recesses or voids.
摘要翻译：在用金属填充孔的方法中，在半导体衬底上依次形成绝缘层，第一掩模层和第二掩模层。使用光致抗蚀剂图案蚀刻第一和第二掩模层以形成第一和第二掩模。使用蚀刻剂选择性地蚀刻第一掩模层图案，第一掩模层图案相对于蚀刻剂具有比第二层图案更高的蚀刻选择性，以形成具有加宽开口的第三掩模层图案。使用第二掩模蚀刻绝缘层，以在绝缘层中形成孔。在孔和第三开口中形成金属层。金属层被平坦化以形成埋在孔中的金属塞，而没有凹陷或空隙。

6. 发明授权

US06976902B2 Chemical mechanical polishing apparatus 失效
标题翻译：化学机械抛光装置
公开(公告)号：US06976902B2
公开(公告)日：2005-12-20
申请号：US10850688
申请日：2004-05-21
申请人： Ja-Eung Koo , Jong-Won Lee , Sung-Bae Lee , Duk-Ho Hong , Sang-Rok Hah , Hong-Seong Son
发明人： Ja-Eung Koo , Jong-Won Lee , Sung-Bae Lee , Duk-Ho Hong , Sang-Rok Hah , Hong-Seong Son
IPC分类号： B24B37/02 , B24B37/04 , B24B49/10 , B24B49/14 , B24B1/00
CPC分类号： B24B37/013 , B24B49/10 , B24B49/14
摘要： There is provided a chemical mechanical polishing apparatus, which may include a polishing table rotated by a polishing table motor and having a pad thereon, a carrier head located above the polishing table to be rotatable by the driving of a carrier head motor and having a wafer located under the bottom thereof, a slurry supplier for supplying a slurry to the upper portion of the polishing table, a first polishing end point detector for detecting a polishing end point through the temperature change of the temperature sensor, at least one temperature sensor for detecting the temperature of a polishing region (the wafer, the pad, and the slurry), and a second polishing end point detector for detecting a polishing end point from the changes of load current, voltage, and resistance of the carrier head motor. Further, instead of the second polishing end point detector, an optical signal polishing end point detector may be employed, for detecting the polishing end point by the light illuminated on the wafer and reflected from the wafer.
摘要翻译：提供了一种化学机械抛光装置，其可以包括由抛光台马达旋转并且具有垫的抛光台，位于抛光台上方的载体头可以通过载体头马达的驱动旋转并具有晶片位于其底部的浆料供应器，用于向抛光台的上部供应浆料;第一抛光终点检测器，用于通过温度传感器的温度变化检测抛光终点;至少一个检测温度传感器抛光区域（晶片，焊盘和浆料）的温度，以及用于从承载头电动机的负载电流，电压和电阻的变化检测抛光终点的第二抛光终点检测器。此外，代替第二研磨终点检测器，可以采用光信号抛光终点检测器，用于通过照射在晶片上的光并从晶片反射来检测抛光终点。

7. 发明授权

US06585570B2 Method and apparatus for supplying chemical-mechanical polishing slurries 有权
标题翻译：用于提供化学机械抛光浆料的方法和设备
公开(公告)号：US06585570B2
公开(公告)日：2003-07-01
申请号：US09848371
申请日：2001-05-03
申请人： Jung-yup Kim , Young-rae Park , Sang-rok Hah
发明人： Jung-yup Kim , Young-rae Park , Sang-rok Hah
IPC分类号： B24B1900
CPC分类号： B24B37/04 , B24B1/04 , B24B57/02
摘要： In method and apparatus for supplying a slurry for a chemical mechanical polishing (CMP) process, a slurry pre-treatment is provided for minimizing the size of abrasive particles in the slurry. In the slurry supplying method, after applying acoustic energy to the slurry to de-agglomerate agglomerated abrasive particles within the slurry, any remaining oversized abrasive particles having a diameter greater than a reference size are filtered out from the slurry. The acoustic energy application step and the filtering step are repeatedly performed for a predetermined time period while circulating the slurry. The slurry supplying apparatus includes a tank for holding a slurry, acoustic energy sources for applying acoustic energy to the slurry held within the tank, a slurry circulating line for circulating the slurry drawn out of the tank, which is connected to the tank, a filter for filtering out abrasive particle clumps having a diameter greater than a reference size from the slurry, which is disposed in the slurry circulating line, and a slurry supplying line for supplying the slurry from the slurry circulating line to a CMP equipment.
摘要翻译：在用于供应用于化学机械抛光（CMP）工艺的浆料的方法和设备中，提供了浆料预处理以使浆料中磨料颗粒的尺寸最小化。在浆料供给方法中，在向浆料中施加声能以使浆料中的附聚磨料颗粒去聚集之前，将任何剩余的具有大于参考尺寸的直径的过大的磨料颗粒从浆料中过滤掉。声音能量施加步骤和过滤步骤在循环淤浆期间重复进行预定时间段。浆料供给装置包括用于保持浆料的罐，用于向保持在罐内的浆料提供声能的声能源，用于使从罐中抽出的浆料循环的浆料循环管线，其与罐连接，过滤器用于从布置在浆料循环管线中的浆料中过滤出具有大于参考尺寸的直径的磨料颗粒团，以及用于将浆料从淤浆循环管线供应到CMP设备的浆料供应管线。

8. 发明授权

US06540935B2 Chemical/mechanical polishing slurry, and chemical mechanical polishing process and shallow trench isolation process employing the same 失效
公开(公告)号：US06540935B2
公开(公告)日：2003-04-01
申请号：US09826169
申请日：2001-04-05
申请人： Jong-won Lee , Jae-dong Lee , Bo-an Yoon , Sang-rok Hah
发明人： Jong-won Lee , Jae-dong Lee , Bo-an Yoon , Sang-rok Hah
IPC分类号： C09K1300
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1463
摘要： A CMP oxide slurry includes an aqueous solution containing abrasive particles and two or more different passivation agents. Preferably, the aqueous solution is made up of deionized water, and the abrasive particles are a metal oxide selected from the group consisting of ceria, silica, alumina, titania, zirconia and germania. Also, a first passivation agent may be an anionic, cationic or nonionic surfactant, and a second passivation agent may be a phthalic acid and its salts. In one example, the first passivation agent is poly-vinyl sulfonic acid, and the second passivation agent is potassium hydrogen phthalate. The slurry exhibits a high oxide to silicon nitride removal selectivity.

9. 发明授权

US06498102B2 Method for planarizing a semiconductor device using ceria-based slurry 有权
标题翻译：使用二氧化铈基浆料平坦化半导体器件的方法
公开(公告)号：US06498102B2
公开(公告)日：2002-12-24
申请号：US09803741
申请日：2001-03-12
申请人： Jung-yup Kim , Young-rae Park , Sang-rok Hah
发明人： Jung-yup Kim , Young-rae Park , Sang-rok Hah
IPC分类号： H01L21302
CPC分类号： H01L21/31053
摘要： A chemical mechanical polishing (CMP) process employs a ceria-based slurry as an abrasive. In particular, a nitride pattern is formed over a semiconductor substrate, and an oxide layer is then formed over the semiconductor substrate and the nitride pattern. Next, a sacrificial insulation layer which is devoid of surface steps is formed over the oxide layer. The sacrificial insulation layer and the oxide layer are then polished by CMP using the ceria-based slurry and using the nitride pattern as a stopper.
摘要翻译：化学机械抛光（CMP）工艺采用二氧化铈基浆料作为研磨剂。特别地，在半导体衬底上形成氮化物图案，然后在半导体衬底和氮化物图案之上形成氧化物层。接下来，在氧化物层上形成没有表面台阶的牺牲绝缘层。然后通过CMP使用二氧化铈基浆料和使用氮化物图案作为塞子来抛光牺牲绝缘层和氧化物层。

10. 发明授权

US06254767B1 Semiconductor device manufacturing apparatus having controller detecting function of filter 失效
标题翻译：具有滤波器控制器检测功能的半导体装置制造装置
公开(公告)号：US06254767B1
公开(公告)日：2001-07-03
申请号：US09496949
申请日：2000-02-03
申请人： Sung-ki Shin , Sang-rok Hah
发明人： Sung-ki Shin , Sang-rok Hah
IPC分类号： B01D1712
CPC分类号： H01L21/67253
摘要： A semiconductor device manufacturing apparatus. The semiconductor device manufacturing apparatus includes: a tank having an inlet and an outlet, for storing a chemical solution; a pump interposed between the inlet and outlet of the tank, for circulating the chemical solution contained in the tank; a filter interposed between the pump and the inlet of the tank; at least one main body connected to an outlet of the filter; a pumping cycle sensor for changing the pumping operation of the pump into a pulse signal; and a controller for measuring the cycle time of the pulse signals generated by the pumping cycle sensor to determine the level of deterioration of the filter.
摘要翻译：半导体器件制造装置。半导体器件制造装置包括：具有用于存储化学溶液的入口和出口的罐; 介于容器的入口和出口之间的用于使包含在罐中的化学溶液循环的泵; 介于泵和容器的入口之间的过滤器; 至少一个主体连接到过滤器的出口; 用于将泵的泵送操作改变为脉冲信号的泵送循环传感器; 以及控制器，用于测量由泵送循环传感器产生的脉冲信号的循环时间，以确定过滤器的劣化程度。

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