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1. 发明授权

US06540935B2 Chemical/mechanical polishing slurry, and chemical mechanical polishing process and shallow trench isolation process employing the same 失效
公开(公告)号：US06540935B2
公开(公告)日：2003-04-01
申请号：US09826169
申请日：2001-04-05
申请人： Jong-won Lee , Jae-dong Lee , Bo-an Yoon , Sang-rok Hah
发明人： Jong-won Lee , Jae-dong Lee , Bo-an Yoon , Sang-rok Hah
IPC分类号： C09K1300
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1463
摘要： A CMP oxide slurry includes an aqueous solution containing abrasive particles and two or more different passivation agents. Preferably, the aqueous solution is made up of deionized water, and the abrasive particles are a metal oxide selected from the group consisting of ceria, silica, alumina, titania, zirconia and germania. Also, a first passivation agent may be an anionic, cationic or nonionic surfactant, and a second passivation agent may be a phthalic acid and its salts. In one example, the first passivation agent is poly-vinyl sulfonic acid, and the second passivation agent is potassium hydrogen phthalate. The slurry exhibits a high oxide to silicon nitride removal selectivity.

2. 发明授权

US06514862B2 Wafer polishing slurry and chemical mechanical polishing (CMP) method using the same 有权
标题翻译：晶圆抛光浆和化学机械抛光（CMP）方法使用相同
公开(公告)号：US06514862B2
公开(公告)日：2003-02-04
申请号：US09977239
申请日：2001-10-16
申请人： Jae-dong Lee , Jong-won Lee , Bo-un Yoon , Sang-rok Hah
发明人： Jae-dong Lee , Jong-won Lee , Bo-un Yoon , Sang-rok Hah
IPC分类号： H01L21302
CPC分类号： C09G1/02 , H01L21/31053
摘要： A chemical mechanical polishing slurry includes an additive of a quaternary ammonium compound having a form of {N—(R1R2R3R4)}+X−, in which R1, R2, R3, and R4 are radicals, and X− is an anion derivative including halogen elements. Preferably, the quaternary ammonium compound is one of [(CH3)3NCH2CH2OH]Cl, [(CH3)3NCH2CH2OH]l, [(CH3)3NCH2CH2OH]Br, [(CH3)3NCH2CH2OH]CO3, and mixtures thereof. The slurry may further include a pH control agent formed of a base such as KOH, NH4OH, and (CH3)4NOH, and an acid such as HCl, H2SO4, H3PO4, and HNO3. Also, the pH control agent can include [(CH3)3NCH2CH2OH]OH. The slurry may further include a surfactant such as cetyldimethyl ammonium bromide, cetyldimethyl ammonium bromide, polyethylene oxide, polyethylene alcohol or polyethylene glycol.
摘要翻译：化学机械抛光浆料包括具有{N-（R1R2R3R4）} + X-形式的季铵化合物的添加剂，其中R 1，R 2，R 3和R 4是自由基，X是包含卤素的阴离子衍生物元素。优选地，季铵化合物是[（CH 3）3 NHCH 2 CH 2 OH] Cl，[（CH 3）3 NHCH 2 CH 2 OH] 1，[（CH 3）3 NHCH 2 CH 2 OH] Br，[（CH 3）3 NHCH 2 CH 2 OH] CO 3及其混合物之一。该浆料还可以包括由碱如KOH，NH 4 OH和（CH 3）4 NOH形成的pH控制剂，以及酸如HCl，H 2 SO 4，H 3 PO 4和HNO 3。此外，pH控制剂可以包括[（CH 3）3 NHCH 2 OH] OH。浆料还可以包括表面活性剂如十六烷基二甲基溴化铵，鲸蜡基二甲基溴化铵，聚环氧乙烷，聚乙烯醇或聚乙二醇。

3. 发明授权

US06914001B2 Chemical/mechanical polishing slurry, and chemical mechanical polishing process and shallow trench isolation process employing the same 失效
标题翻译：化学/机械抛光浆料和化学机械抛光工艺以及采用其的浅沟槽隔离工艺
公开(公告)号：US06914001B2
公开(公告)日：2005-07-05
申请号：US10351539
申请日：2003-01-27
申请人： Jong-won Lee , Jae-dong Lee , Bo-un Yoon , Sang-rok Hah
发明人： Jong-won Lee , Jae-dong Lee , Bo-un Yoon , Sang-rok Hah
IPC分类号： B24B57/02 , B24B37/00 , C09G1/02 , C09K3/14 , H01L21/304 , H01L21/3105 , H01L21/302
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1463
摘要： A CMP oxide slurry includes an aqueous solution containing abrasive particles and two or more different passivation agents. Preferably, the aqueous solution is made up of deionized water, and the abrasive particles are a metal oxide selected from the group consisting of ceria, silica, alumina, titania, zirconia and germania. Also, a first passivation agent may be an anionic, cationic or nonionic surfactant, and a second passivation agent may be a phthalic acid and its salts. In one example, the first passivation agent is poly-vinyl sulfonic acid, and the second passivation agent is potassium hydrogen phthalate. The slurry exhibits a high oxide to silicon nitride removal selectivity.
摘要翻译： CMP氧化物浆料包括含有磨料颗粒和两种或更多种不同钝化剂的水溶液。优选地，水溶液由去离子水组成，磨料颗粒是选自二氧化铈，二氧化硅，氧化铝，二氧化钛，氧化锆和氧化锗的金属氧化物。此外，第一钝化剂可以是阴离子，阳离子或非离子表面活性剂，第二钝化剂可以是邻苯二甲酸及其盐。在一个实例中，第一钝化剂是聚乙烯基磺酸，第二钝化剂是邻苯二甲酸氢钾。该浆料表现出高的氧化物与氮化硅的去除选择性。

4. 发明授权

US06610596B1 Method of forming metal interconnection using plating and semiconductor device manufactured by the method 有权
标题翻译：使用该方法制造的使用电镀和半导体器件形成金属互连的方法
公开(公告)号：US06610596B1
公开(公告)日：2003-08-26
申请号：US09662120
申请日：2000-09-14
申请人： Jong-won Lee , Bo-un Yoon , Kun-tack Lee , Sang-rok Hah
发明人： Jong-won Lee , Bo-un Yoon , Kun-tack Lee , Sang-rok Hah
IPC分类号： H01L2144
CPC分类号： H01L21/7684 , H01L21/76879
摘要： A method is provided for forming a metal interconnection using a plating process, which can improve the throughput and reliability of semiconductor devices by decreasing the required polishing in a chemical mechanical polishing process. A semiconductor device manufactured by this method is also provided. In the method of forming a metal interconnection, a recess region is formed in a portion of an insulation layer formed over a substrate, i.e., where a metal interconnection layer will be formed. A diffusion prevention layer is formed over the substrate, the insulation layer, and the recess region. Then, a metal seed layer is formed over the diffusion prevention layer only in the recess region using a chemical mechanical polishing process or an etch back process. A conductive plating layer is then formed on the metal seed layer only in the recess region. Thereafter, surface polarization is performed to form a metal interconnection layer in the recess region. The plating layer may be formed after forming the seed layer only in the bottom portion of the recess region.
摘要翻译：提供了一种使用电镀工艺形成金属互连的方法，其可以通过减少化学机械抛光工艺中所需的抛光来提高半导体器件的生产能力和可靠性。还提供了通过该方法制造的半导体器件。在形成金属互连的方法中，在形成在基板上的绝缘层的一部分中，即将形成金属互连层的区域中形成凹陷区域。在基板，绝缘层和凹部区域上形成扩散防止层。然后，使用化学机械抛光工艺或回蚀工艺，仅在凹陷区域中在扩散防止层上形成金属种子层。然后在金属种子层上仅在凹陷区域中形成导电镀层。此后，进行表面极化以在凹部区域中形成金属互连层。可以在仅在凹部的底部形成种子层之后形成镀层。

5. 发明申请

US20070155178A1 Slurry for chemical mechanical polishing process and method of manufacturing semiconductor device using the same 审中-公开
标题翻译：用于化学机械抛光工艺的浆料及使用其制造半导体器件的方法
公开(公告)号：US20070155178A1
公开(公告)日：2007-07-05
申请号：US11712931
申请日：2007-03-01
申请人： Young-rae Park , Jung-yup Kim , Bo-un Yoon , Kwang-bok Kim , Jae-phill Boo , Jong-won Lee , Sang-rok Hah , Kyung-hyun Kim , Chang-ki Hong
发明人： Young-rae Park , Jung-yup Kim , Bo-un Yoon , Kwang-bok Kim , Jae-phill Boo , Jong-won Lee , Sang-rok Hah , Kyung-hyun Kim , Chang-ki Hong
IPC分类号： H01L21/306 , H01L21/461 , B44C1/22 , C23F1/00 , H01L21/302
CPC分类号： H01L21/76224 , B24B37/044 , C09G1/02 , H01L21/31053
摘要： A slurry composition useful for chemical mechanical polishing of the surface of a material layer, e.g., a silicon oxide layer, is disclosed. A first material surface which is exposed to the slurry exhibits hydrophilicity, while a second material layer, e.g., a polysilicon layer, the surface of which is also exposed to the slurry, exhibits hydrophobicity, and accordingly acts as a polishing stopping layer. The slurry composition consists essentially of water, abrasive grains, and a polymer additive having both hydrophilic and hydrophobic functional groups.
摘要翻译：公开了一种用于材料层表面例如氧化硅层的化学机械抛光的浆料组合物。暴露于浆料的第一材料表面显示出亲水性，而第二材料层，例如其表面也暴露于浆料的多晶硅层，表现出疏水性，因此用作抛光停止层。浆料组合物基本上由水，磨料颗粒和具有亲水和疏水官能团的聚合物添加剂组成。

6. 发明授权

US07196010B2 Slurry for chemical mechanical polishing process and method of manufacturing semiconductor device using the same 失效
公开(公告)号：US07196010B2
公开(公告)日：2007-03-27
申请号：US10639541
申请日：2003-08-12
申请人： Young-rae Park , Jung-yup Kim , Bo-un Yoon , Kwang-bok Kim , Jae-phil Boo , Jong-won Lee , Sang-rok Hah , Kyung-hyun Kim , Chang-ki Hong
发明人： Young-rae Park , Jung-yup Kim , Bo-un Yoon , Kwang-bok Kim , Jae-phil Boo , Jong-won Lee , Sang-rok Hah , Kyung-hyun Kim , Chang-ki Hong
IPC分类号： H01L21/302
CPC分类号： H01L21/76224 , B24B37/044 , C09G1/02 , H01L21/31053
摘要： A slurry composition useful for chemical mechanical polishing of the surface of a material layer, e.g., a silicon oxide layer, is disclosed. A first material surface which is exposed to the slurry exhibits hydrophilicity, while a second material layer, e.g., a polysilicon layer, the surface of which is also exposed to the slurry, exhibits hydrophobicity, and accordingly acts as a polishing stopping layer. The slurry composition consists essentially of water, abrasive grains, and a polymer additive having both hydrophilic and hydrophobic functional groups.

7. 发明授权

US06626968B2 Slurry for chemical mechanical polishing process and method of manufacturing semiconductor device using the same 失效
公开(公告)号：US06626968B2
公开(公告)日：2003-09-30
申请号：US09861697
申请日：2001-05-21
申请人： Young-rae Park , Jung-yup Kim , Bo-un Yoon , Kwang-bok Kim , Jae-phil Boo , Jong-won Lee , Sang-rok Hah , Kyung-hyun Kim , Chang-ki Hong
发明人： Young-rae Park , Jung-yup Kim , Bo-un Yoon , Kwang-bok Kim , Jae-phil Boo , Jong-won Lee , Sang-rok Hah , Kyung-hyun Kim , Chang-ki Hong
IPC分类号： C09G102
CPC分类号： H01L21/76224 , B24B37/044 , C09G1/02 , H01L21/31053
摘要： A slurry composition useful for chemical mechanical polishing of the surface of a material layer, e.g., a silicon oxide layer, is disclosed. A first material surface which is exposed to the slurry exhibits hydrophilicity, while a second material layer, e.g., a polysilicon layer, the surface of which is also exposed to the slurry, exhibits hydrophobicity, and accordingly acts as a polishing stopping layer. The slurry composition consists essentially of water, abrasive grains, and a polymer additive having both hydrophilic and hydrophobic functional groups.

8. 发明授权

US06863592B2 Chemical/mechanical polishing slurry and chemical mechanical polishing method using the same 有权
标题翻译：化学/机械抛光浆和化学机械抛光方法使用相同
公开(公告)号：US06863592B2
公开(公告)日：2005-03-08
申请号：US10291357
申请日：2002-11-08
申请人： Jong-won Lee , Chang-ki Hong , Jae-dong Lee
发明人： Jong-won Lee , Chang-ki Hong , Jae-dong Lee
IPC分类号： B24B37/00 , C09G1/02 , C09K3/14 , H01L21/302 , H01L21/304 , H01L21/3105 , H01L21/3205 , H01L21/321 , H01L21/768 , B24B1/00
CPC分类号： H01L21/31053 , C09G1/02
摘要： CMP (chemical/mechanical polishing) slurries that can rapidly remove a target layer and can effectively passivate a polishing stopper, with high selectivity. In one aspect, a CMP slurry comprises metal oxide abrasive particles, a removal rate accelerator, an anionic polymeric passivation agent having a molecular weight in a range of about 1,000 to about 100,000, a C1-C12 anionic passivation agent, and water.
摘要翻译： CMP（化学/机械抛光）浆料，可以快速去除目标层，并可以高选择性有效钝化抛光终止剂。在一个方面，CMP浆料包含金属氧化物磨料颗粒，去除速率促进剂，分子量在约1,000至约100,000范围内的阴离子聚合物钝化剂，C1-C12阴离子钝化剂和水。

9. 发明授权

US08338300B2 Slurry composition for chemical-mechanical polishing and method of chemical-mechanical polishing with the same 失效
标题翻译：用于化学机械抛光的浆料组合物及其化学机械抛光方法
公开(公告)号：US08338300B2
公开(公告)日：2012-12-25
申请号：US12219985
申请日：2008-07-31
申请人： Jong-won Lee , Chang-ki Hong , Sang-yeob Han
发明人： Jong-won Lee , Chang-ki Hong , Sang-yeob Han
IPC分类号： H01L21/302
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1463
摘要： Provided may be a slurry composition for chemical mechanical polishing (CMP) and a CMP method using the same. For example, the slurry composition may include a first polishing inhibitor including at least one of PO43− or HPO42− and a second polishing inhibitor, which may be a C2-C10 hydrocarbon compound having —SO3H or —OSO3H. By using the slurry composition for CMP and a CMP method using the same, increased selectivity to SiN may be obtained.
摘要翻译：可提供用于化学机械抛光（CMP）的浆料组合物和使用其的CMP方法。例如，浆料组合物可以包括第一抛光抑制剂，其包括PO43-或HPO42-和至少一种抛光抑制剂，其可以是具有-SO 3 H或-OSO 3 H的C 2 -C 10烃化合物。通过使用用于CMP的浆料组合物和使用其的CMP方法，可以获得对SiN的增加的选择性。

10. 发明授权

US07846801B2 Method of fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07846801B2
公开(公告)日：2010-12-07
申请号：US11833050
申请日：2007-08-02
申请人： Sung-jun Kim , Seong-kyu Yun , Chang-ki Hong , Bo-un Yoon , Jong-won Lee , Ho-young Kim
发明人： Sung-jun Kim , Seong-kyu Yun , Chang-ki Hong , Bo-un Yoon , Jong-won Lee , Ho-young Kim
IPC分类号： H01L21/336
CPC分类号： H01L29/66795 , H01L29/7851
摘要： Disclosed is a method of fabricating a semiconductor device including a multi-gate transistor. The method of fabricating a semiconductor device includes providing a semiconductor device having a number of active patterns which extend in a first direction, are separated by an isolation layer, and covered with a first insulating layer; forming a first groove by etching the isolation layer located between the active patterns adjacent to each other in the first direction; burying the first groove with a passivation layer; forming a second groove exposing at least a portion of both sides of the active patterns by etching the isolation layer located between the active patterns in a second direction intersecting the first direction; removing the passivation layer in the first groove; and forming a gate line filling at least a portion of the second groove and extending in the second direction.
摘要翻译：公开了一种制造包括多栅极晶体管的半导体器件的方法。制造半导体器件的方法包括提供具有多个沿第一方向延伸的活性图案的半导体器件，被隔离层隔开并被第一绝缘层覆盖; 通过在第一方向上蚀刻位于彼此相邻的有源图案之间的隔离层来形成第一凹槽; 用钝化层掩埋第一槽; 通过在与所述第一方向相交的第二方向上蚀刻位于所述有源图案之间的所述隔离层来形成暴露所述有源图案的两侧的至少一部分的第二凹槽; 去除第一凹槽中的钝化层; 以及形成填充所述第二凹槽的至少一部分并沿所述第二方向延伸的栅极线。

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