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1. 发明授权

US08212471B2 Light emitting device and electronic equipment provided with the light emitting device 有权
标题翻译：配有发光装置的发光装置和电子设备
公开(公告)号：US08212471B2
公开(公告)日：2012-07-03
申请号：US11988652
申请日：2006-07-11
申请人： Masayasu Miyata , Yuji Shinohara
发明人： Masayasu Miyata , Yuji Shinohara
IPC分类号： H01J1/62 , H01J63/04
CPC分类号： H01L51/5012 , B82Y20/00 , B82Y30/00 , H01L51/5048 , H01L2251/5369
摘要： A light emitting device having excellent characteristics such as light emitting efficiency and the like and electrical equipment provided with such a light emitting device and having high reliability are provided. The light emitting device includes a light emitting layer 42 formed of a first organic semiconductor material, a hole transport layer (carrier transport layer) 41 formed of a second organic semiconductor material and provided in contact with the light emitting layer 42, and particles 411 provided in contact with both the light emitting layer 42 and the hole transport layer 41, wherein an entire of or a part of each of the particles 411 is embedded in the light emitting layer (the other layer) 42 so that the particles 411 can contain the second organic semiconductor material (organic semiconductor material which constitutes the other layer).
摘要翻译：提供了具有优异特性如发光效率等的发光器件和设置有这种发光器件并且具有高可靠性的电气设备。发光器件包括由第一有机半导体材料形成的发光层42，由第二有机半导体材料形成并与发光层42接触的空穴传输层（载流子传输层）41，以及提供的颗粒411 与发光层42和空穴传输层41两者接触，其中每个颗粒411的全部或一部分嵌入发光层（另一层）42中，使得颗粒411可以包含第二有机半导体材料（构成另一层的有机半导体材料）。

2. 发明授权

US08168482B2 Semiconductor device, an electronic device and an electronic apparatus 有权
标题翻译：半导体装置，电子装置和电子装置
公开(公告)号：US08168482B2
公开(公告)日：2012-05-01
申请号：US12897092
申请日：2010-10-04
申请人： Masayasu Miyata
发明人： Masayasu Miyata
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L21/28194 , H01L21/02142 , H01L21/02164 , H01L21/28202 , H01L21/28211 , H01L21/3003 , H01L21/3105 , H01L29/517 , H01L29/518
摘要： A method for manufacturing a semiconductor device comprises preparing a base; forming a silicon oxide film including hydrogen or deuterium on the base; diffusing nitrogen into the silicon oxide film to form a gate insulating film; forming a gate electrode on the gate insulating film; ion doping the base to form source and drain regions along side a channel region; and forming a source electrode connected to the source region and a drain electrode connected to the drain region, the gate insulating film having a region where B/A is in the range of 1.6 to 10, where A is a concentration of nitrogen, and B is a concentration of hydrogen or deuterium, and the region is Y/10 of the thickness of the gate insulating film from the interface between the gate insulating film and the base, where Y is an average thickness of the gate insulating film.
摘要翻译：一种制造半导体器件的方法包括：制备基底; 在基底上形成包含氢或氘的氧化硅膜; 将氮扩散到氧化硅膜中以形成栅极绝缘膜; 在栅极绝缘膜上形成栅电极; 离子掺杂基底以沿着沟道区域侧形成源极和漏极区域; 并且形成连接到所述源极区域的源电极和连接到所述漏极区域的漏电极，所述栅极绝缘膜具有B / A在1.6至10的范围内的区域，其中A是氮的浓度，并且B 是氢或氘的浓度，并且该区域是栅极绝缘膜与栅极绝缘膜和基底之间的界面的厚度的Y / 10，其中Y是栅极绝缘膜的平均厚度。

3. 发明授权

US07579661B2 Semiconductor device, electronic device and electronic apparatus 失效
标题翻译：半导体器件，电子器件和电子设备
公开(公告)号：US07579661B2
公开(公告)日：2009-08-25
申请号：US10579871
申请日：2004-11-17
申请人： Masayasu Miyata , Masamitsu Uehara
发明人： Masayasu Miyata , Masamitsu Uehara
IPC分类号： H01L29/92
CPC分类号： H01L21/28185 , H01L21/0214 , H01L21/02145 , H01L21/02148 , H01L21/02159 , H01L21/02164 , H01L21/02238 , H01L21/02255 , H01L21/02271 , H01L21/02337 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L21/3144 , H01L21/3145 , H01L21/31604 , H01L21/31612 , H01L21/31641 , H01L21/31645 , H01L21/31662 , H01L29/511 , H01L29/517 , H01L29/518 , H01L2924/0002 , H01L2924/00
摘要： An semiconductor device (1) of the invention includes a semiconductor substrate provided with a channel region (21), a source region (22) and a drain region (23), a gate insulating film (3) laminated on the channel region (21), and a gate electrode (5). The gate insulating film (3) is formed of an insulative inorganic material as a main material, and further contains hydrogen. The absorbance of infrared radiation of which wave number is in the range of 3200 to 3500 cm−1 is 0.02 or less when the gate insulating film (3) to which an electric field has never been applied is measured with Fourier Transform Infrared Spectroscopy at room temperature.
摘要翻译：本发明的半导体器件（1）包括设置有沟道区（21），源区（22）和漏区（23）的半导体衬底，层叠在沟道区（21）上的栅极绝缘膜）和栅电极（5）。栅绝缘膜（3）由绝缘无机材料作为主要材料形成，并且还包含氢。使用傅立叶变换红外光谱法测量当没有施加电场的栅极绝缘膜（3）时，波数在3200〜3500cm -1范围内的红外线辐射的吸光度为0.02以下温度。

4. 发明申请

US20070102823A1 Semiconductor device, electronic device and electronic apparatus 失效
标题翻译：半导体器件，电子器件和电子设备
公开(公告)号：US20070102823A1
公开(公告)日：2007-05-10
申请号：US10579871
申请日：2004-11-17
申请人： Masayasu Miyata , Masamitsu Uehara
发明人： Masayasu Miyata , Masamitsu Uehara
IPC分类号： H01L21/4763 , H01L23/48
CPC分类号： H01L21/28185 , H01L21/0214 , H01L21/02145 , H01L21/02148 , H01L21/02159 , H01L21/02164 , H01L21/02238 , H01L21/02255 , H01L21/02271 , H01L21/02337 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L21/3144 , H01L21/3145 , H01L21/31604 , H01L21/31612 , H01L21/31641 , H01L21/31645 , H01L21/31662 , H01L29/511 , H01L29/517 , H01L29/518 , H01L2924/0002 , H01L2924/00
摘要： An semiconductor device (1) of the invention includes a semiconductor substrate provided with a channel region (21), a source region (22) and a drain region (23), a gate insulating film (3) laminated on the channel region (21), and a gate electrode (5). The gate insulating film (3) is formed of an insulative inorganic material as a main material, and further contains hydrogen. The absorbance of infrared radiation of which wave number is in the range of 3200 to 3500 cm−1 is 0.02 or less when the gate insulating film (3) to which an electric field has never been applied is measured with Fourier Transform Infrared Spectroscopy at room temperature.
摘要翻译：本发明的半导体器件（1）包括设置有沟道区（21），源区（22）和漏区（23）的半导体衬底，层叠在沟道区（21）上的栅极绝缘膜）和栅电极（5）。栅绝缘膜（3）由绝缘无机材料作为主要材料形成，并且还包含氢。测量从未施加电场的栅极绝缘膜（3）的波数在3200〜3500cm -1以下的红外线的吸光度为0.02以下在室温下进行傅立叶变换红外光谱。

5. 发明授权

US07592190B2 Method of evaluating characteristics of and forming of an insulating film for a semiconductor device 失效
标题翻译：评价半导体器件绝缘膜的特性和形成的方法
公开(公告)号：US07592190B2
公开(公告)日：2009-09-22
申请号：US11632748
申请日：2005-06-01
申请人： Masayasu Miyata
发明人： Masayasu Miyata
IPC分类号： H01L21/00 , G01R3/26
CPC分类号： H01L21/31612 , H01L21/0214 , H01L21/02164 , H01L21/02238 , H01L21/02255 , H01L21/02271 , H01L21/02337 , H01L21/31641 , H01L21/31645 , H01L21/31662
摘要： A method of evaluating characteristics of an insulating film 1 is disclosed. The insulating film 1 is formed of an insulative inorganic material as a main material, the insulative inorganic material containing silicon and oxygen. The insulating film 1 further contains hydrogen atoms. The method includes the steps of: analyzing the insulating film 1 to which an electric field has never been applied by Thermal Desorption Spectroscopy; comparing intensity of an H2 fragment with intensity of an OH fragment, the intensity of the H2 fragment and the intensity of the OH fragment being measured at a state where the insulating film 1 is heated at a temperature in the range of 500 to 1000° C.; and evaluating the characteristics of the insulating film 1 on the basis of the comparison result.
摘要翻译：公开了评价绝缘膜1的特性的方法。绝缘膜1由绝缘无机材料作为主要材料形成，绝缘无机材料含有硅和氧。绝缘膜1还含有氢原子。该方法包括以下步骤：通过热解吸光谱分析从未施加电场的绝缘膜1; 将H 2片段的强度与OH片段的强度，H 2片段的强度和OH片段的强度进行比较，其中绝缘膜1在500至1000℃的温度范围内被加热。并根据比较结果评价绝缘膜1的特性。

6. 发明申请

US20070101301A1 SIMULATION APPARTUS, SIMULATION METHOD, AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：模拟仿真，仿真方法和半导体器件
公开(公告)号：US20070101301A1
公开(公告)日：2007-05-03
申请号：US11470027
申请日：2006-09-05
申请人： Masayasu MIYATA
发明人： Masayasu MIYATA
IPC分类号： G06F17/50
CPC分类号： G06F17/5036
摘要： An apparatus for simulating a current-voltage characteristic of a device includes an atomic structure creating unit that creates an atomic structure model of the device, an electronic structure calculating unit that calculates an electronic structure in the atomic structure model, a first IV characteristic calculating unit that calculates the current-voltage characteristic of the device by considering a quantum effect and the atomic structure on the basis of the electronic structure calculated by the electronic structure calculating unit, a second IV characteristic calculating unit that calculates the current-voltage characteristic on the basis of the electronic structure using a semiclassical approximation method, and a combining unit that combines a first current-voltage characteristic obtained by the first IV characteristic calculating unit and a second current-voltage characteristic obtained by the second IV characteristic calculating unit such that the first current-voltage characteristic is applied to a low voltage side on the basis of a position of approaching the both first and second current-voltage characteristics and the second current-voltage characteristic is applied to a high voltage side on the basis of approaching the both first and second current-voltage characteristics to obtain the current-voltage characteristic of the device.
摘要翻译：用于模拟装置的电流 - 电压特性的装置包括：产生装置的原子结构模型的原子结构创建单元，计算原子结构模型中的电子结构的电子结构计算单元;第一IV特性计算单元其通过考虑基于由电子结构计算单元计算出的电子结构的量子效应和原子结构来计算器件的电流 - 电压特性;第二IV特性计算单元，基于该第二IV特性计算单元计算电流 - 电压特性的组合单元，以及组合单元，其组合由第一IV特性计算单元获得的第一电流 - 电压特性和由第二IV特征计算单元获得的第二电流 - 电压特性，使得第一电流电压特征基于接近第一和第二电流 - 电压特性的位置，将低电压特性施加到低电压侧，并且基于接近第一和第二电流的第二电流 - 电压特性被施加到高压侧电压特性，以获得器件的电流 - 电压特性。

7. 发明申请

US20120181633A1 Semiconductor Device, An Electronic Device and an Electronic Apparatus 有权
标题翻译：半导体器件，电子器件和电子器件
公开(公告)号：US20120181633A1
公开(公告)日：2012-07-19
申请号：US13430181
申请日：2012-03-26
申请人： Masayasu Miyata
发明人： Masayasu Miyata
IPC分类号： H01L29/78 , C04B35/01
CPC分类号： H01L21/28194 , H01L21/02142 , H01L21/02164 , H01L21/28202 , H01L21/28211 , H01L21/3003 , H01L21/3105 , H01L29/517 , H01L29/518
摘要： A semiconductor device 1 includes: a base 2 mainly formed of a semiconductor material; a gate electrode 5; and a gate insulating film 3 provided between the base 2 and the gate electrode 5. The gate insulating film 3 is formed of an insulative inorganic material containing silicon, oxygen and element X other than silicon and oxygen as a main material. The gate insulating film 3 is provided in contact with the base 2, and contains hydrogen atoms. The gate insulating film 3 has a region where A and B satisfy the relation: B/A is 10 or less in the case where the total concentration of the element X in the region is defined as A and the total concentration of hydrogen in the region is defined as B. Further, the region is at least apart of the gate insulating film 3 in the thickness direction thereof.
摘要翻译：半导体器件1包括：主要由半导体材料形成的基底2; 栅电极5; 以及设置在基底2和栅极电极5之间的栅极绝缘膜3.栅极绝缘膜3由含有硅，氧以及作为主要材料的硅和氧以外的元素X的绝缘性无机材料形成。栅极绝缘膜3设置成与基底2接触，并且含有氢原子。栅极绝缘膜3具有区域，其中A和B满足以下关系：在区域中的元素X的总浓度定义为A的情况下，B / A为10以下，并且该区域中的氢的总浓度被定义为B.此外，该区域至少在栅极绝缘膜3的厚度方向上分开。

8. 发明授权

US07943401B2 Detection and reduction of dielectric breakdown in semiconductor devices 有权
标题翻译：检测和减少半导体器件中的介质击穿
公开(公告)号：US07943401B2
公开(公告)日：2011-05-17
申请号：US12114587
申请日：2008-05-02
申请人： Jamil Tamir-Kheli , William A. Goddard, III , Masayasu Miyata
发明人： Jamil Tamir-Kheli , William A. Goddard, III , Masayasu Miyata
IPC分类号： H01L21/66
CPC分类号： G01N21/66 , H01L22/00 , H01L22/24
摘要： Methods for detecting the breakdown potential of a semiconductor device having a thin dielectric layer are disclosed. The method includes measuring a spectroscopy of the thin dielectric layer and determining whether the spectroscopy exhibits the presence of a breakdown precursor (H2, H interstitial radical, H attached radical, and H attached dimer). Preferably, the method is carried out in the presence of a substantially significant applied electric field across dielectric layer. A semiconductor device tested in accordance with this method is also disclosed. Additionally, methods for reducing dielectric breakdown of a semiconductor device having a thin dielectric layer involving the substitution of a second molecule for H2 molecules present in the dielectric. This second molecule preferably does not react with Si or O to form an undesired attached state and may be an inert gas having a molecular size approximating that of a Hydrogen atom, such as Helium. A semiconductor device made using this method is also disclosed.
摘要翻译：公开了一种用于检测具有薄介电层的半导体器件的击穿电位的方法。该方法包括测量薄介电层的光谱，并确定光谱是否表现出分解前体（H2，H间隙自由基，H连接基团和H连接的二聚体）的存在。优选地，该方法在跨介电层的基本上有效的施加电场的存在下进行。还公开了根据该方法测试的半导体器件。另外，用于减少具有薄介电层的半导体器件的电介质击穿的方法涉及电介质中存在的用于H 2分子的第二分子的取代。该第二分子优选不与Si或O反应以形成不期望的附着状态，并且可以是分子大小接近氢原子如氦的惰性气体。还公开了使用该方法制造的半导体器件。

9. 发明申请

US20110018074A1 SEMICONDUCTOR DEVICE, AN ELECTRONIC DEVICE AND AN ELECTRONIC APPARATUS 有权
标题翻译：半导体器件，电子器件和电子设备
公开(公告)号：US20110018074A1
公开(公告)日：2011-01-27
申请号：US12897092
申请日：2010-10-04
申请人： Masayasu MIYATA
发明人： Masayasu MIYATA
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L21/28194 , H01L21/02142 , H01L21/02164 , H01L21/28202 , H01L21/28211 , H01L21/3003 , H01L21/3105 , H01L29/517 , H01L29/518
摘要： A method for manufacturing a semiconductor device comprises preparing a base; forming a silicon oxide film including hydrogen or deuterium on the base; diffusing nitrogen into the silicon oxide film to form a gate insulating film; forming a gate electrode on the gate insulating film; ion doping the base to form source and drain regions along side a channel region; and forming a source electrode connected to the source region and a drain electrode connected to the drain region, the gate insulating film having a region where B/A is in the range of 1.6 to 10, where A is a concentration of nitrogen, and B is a concentration of hydrogen or deuterium, and the region is Y/10 of the thickness of the gate insulating film from the interface between the gate insulating film and the base, where Y is an average thickness of the gate insulating film.
摘要翻译：一种制造半导体器件的方法包括：制备基底; 在基底上形成包含氢或氘的氧化硅膜; 将氮扩散到氧化硅膜中以形成栅极绝缘膜; 在栅极绝缘膜上形成栅电极; 离子掺杂基底以沿着沟道区域侧形成源极和漏极区域; 并且形成连接到所述源极区域的源电极和连接到所述漏极区域的漏电极，所述栅极绝缘膜具有B / A在1.6至10的范围内的区域，其中A是氮的浓度，并且B 是氢或氘的浓度，并且该区域是栅极绝缘膜与栅极绝缘膜和基底之间的界面的厚度的Y / 10，其中Y是栅极绝缘膜的平均厚度。

10. 发明申请

US20080211500A1 Detection and Reduction of Dielectric Breakdown in Semiconductor Devices 有权
标题翻译：半导体器件介质击穿的检测和降低
公开(公告)号：US20080211500A1
公开(公告)日：2008-09-04
申请号：US12114587
申请日：2008-05-02
申请人： Jamil Tahir-Kheli , William A. Goddard , Masayasu Miyata
发明人： Jamil Tahir-Kheli , William A. Goddard , Masayasu Miyata
IPC分类号： G01R31/26 , G01N24/10 , G01J3/00
CPC分类号： G01N21/66 , H01L22/00 , H01L22/24
摘要： Methods for detecting the breakdown potential of a semiconductor device having a thin dielectric layer are disclosed. The method includes measuring a spectroscopy of the thin dielectric layer and determining whether the spectroscopy exhibits the presence of a breakdown precursor (H2, H interstitial radical, H attached radical, and H attached dimer). Preferably, the method is carried out in the presence of a substantially significant applied electric field across dielectric layer. A semiconductor device tested in accordance with this method is also disclosed. Additionally, methods for reducing dielectric breakdown of a semiconductor device having a thin dielectric layer involving the substitution of a second molecule for H2 molecules present in the dielectric. This second molecule preferably does not react with Si or O to form an undesired attached state and may be an inert gas having a molecular size approximating that of a Hydrogen atom, such as Helium. A semiconductor device made using this method is also disclosed.
摘要翻译：公开了一种用于检测具有薄介电层的半导体器件的击穿电位的方法。该方法包括测量薄介电层的光谱，并确定光谱是否表现出分解前体（H 2 H 2，H间隙自由基，H连接基团和H连接的二聚体）的存在。优选地，该方法在跨介电层的基本上有效的施加电场的存在下进行。还公开了根据该方法测试的半导体器件。另外，用于减小具有薄介电层的半导体器件的电介质击穿的方法涉及电介质中存在的H 2 H 2分子的第二分子。该第二分子优选不与Si或O反应以形成不期望的附着状态，并且可以是分子大小接近氢原子如氦的惰性气体。还公开了使用该方法制造的半导体器件。

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