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1. 发明申请

US20070101301A1 SIMULATION APPARTUS, SIMULATION METHOD, AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：模拟仿真，仿真方法和半导体器件
公开(公告)号：US20070101301A1
公开(公告)日：2007-05-03
申请号：US11470027
申请日：2006-09-05
申请人： Masayasu MIYATA
发明人： Masayasu MIYATA
IPC分类号： G06F17/50
CPC分类号： G06F17/5036
摘要： An apparatus for simulating a current-voltage characteristic of a device includes an atomic structure creating unit that creates an atomic structure model of the device, an electronic structure calculating unit that calculates an electronic structure in the atomic structure model, a first IV characteristic calculating unit that calculates the current-voltage characteristic of the device by considering a quantum effect and the atomic structure on the basis of the electronic structure calculated by the electronic structure calculating unit, a second IV characteristic calculating unit that calculates the current-voltage characteristic on the basis of the electronic structure using a semiclassical approximation method, and a combining unit that combines a first current-voltage characteristic obtained by the first IV characteristic calculating unit and a second current-voltage characteristic obtained by the second IV characteristic calculating unit such that the first current-voltage characteristic is applied to a low voltage side on the basis of a position of approaching the both first and second current-voltage characteristics and the second current-voltage characteristic is applied to a high voltage side on the basis of approaching the both first and second current-voltage characteristics to obtain the current-voltage characteristic of the device.
摘要翻译：用于模拟装置的电流 - 电压特性的装置包括：产生装置的原子结构模型的原子结构创建单元，计算原子结构模型中的电子结构的电子结构计算单元;第一IV特性计算单元其通过考虑基于由电子结构计算单元计算出的电子结构的量子效应和原子结构来计算器件的电流 - 电压特性;第二IV特性计算单元，基于该第二IV特性计算单元计算电流 - 电压特性的组合单元，以及组合单元，其组合由第一IV特性计算单元获得的第一电流 - 电压特性和由第二IV特征计算单元获得的第二电流 - 电压特性，使得第一电流电压特征基于接近第一和第二电流 - 电压特性的位置，将低电压特性施加到低电压侧，并且基于接近第一和第二电流的第二电流 - 电压特性被施加到高压侧电压特性，以获得器件的电流 - 电压特性。

2. 发明申请

US20110018074A1 SEMICONDUCTOR DEVICE, AN ELECTRONIC DEVICE AND AN ELECTRONIC APPARATUS 有权
标题翻译：半导体器件，电子器件和电子设备
公开(公告)号：US20110018074A1
公开(公告)日：2011-01-27
申请号：US12897092
申请日：2010-10-04
申请人： Masayasu MIYATA
发明人： Masayasu MIYATA
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L21/28194 , H01L21/02142 , H01L21/02164 , H01L21/28202 , H01L21/28211 , H01L21/3003 , H01L21/3105 , H01L29/517 , H01L29/518
摘要： A method for manufacturing a semiconductor device comprises preparing a base; forming a silicon oxide film including hydrogen or deuterium on the base; diffusing nitrogen into the silicon oxide film to form a gate insulating film; forming a gate electrode on the gate insulating film; ion doping the base to form source and drain regions along side a channel region; and forming a source electrode connected to the source region and a drain electrode connected to the drain region, the gate insulating film having a region where B/A is in the range of 1.6 to 10, where A is a concentration of nitrogen, and B is a concentration of hydrogen or deuterium, and the region is Y/10 of the thickness of the gate insulating film from the interface between the gate insulating film and the base, where Y is an average thickness of the gate insulating film.
摘要翻译：一种制造半导体器件的方法包括：制备基底; 在基底上形成包含氢或氘的氧化硅膜; 将氮扩散到氧化硅膜中以形成栅极绝缘膜; 在栅极绝缘膜上形成栅电极; 离子掺杂基底以沿着沟道区域侧形成源极和漏极区域; 并且形成连接到所述源极区域的源电极和连接到所述漏极区域的漏电极，所述栅极绝缘膜具有B / A在1.6至10的范围内的区域，其中A是氮的浓度，并且B 是氢或氘的浓度，并且该区域是栅极绝缘膜与栅极绝缘膜和基底之间的界面的厚度的Y / 10，其中Y是栅极绝缘膜的平均厚度。

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