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1. 发明申请

US20230111798A1 LEAD-FREE SOLDER ALLOY AND METHOD OF MANUFACTURING ELECTRONIC DEVICE USING THE SAME 有权
公开(公告)号：US20230111798A1
公开(公告)日：2023-04-13
申请号：US17959502
申请日：2022-10-04
申请人： MK ELECTRON CO., LTD.
发明人： Young Woo LEE , Seul Gi LEE , Hui Joong KIM , Jae Yool SON , Jae Hun SONG , Jeong Tak MOON
IPC分类号： B23K35/26 , C22C13/02
摘要： A lead-free solder alloy includes bismuth (Bi), content of which is equal to or greater than 56 wt % and equal to or less than 57.5 wt %, indium (In), content of which is equal to or greater than 0.05 wt % and equal to or less than 1.0 wt %, and the balance of tin (Sn) and another unavoidable impurity. The lead-free solder alloy of the disclosure may enable bonding with improved ductility and thermal shock reliability while not having a large melting point change compared to an Sn-58Bi alloy.

2. 发明申请

US20150072235A1 POWDER MANUFACTURING APPARATUS AND ANODE ACTIVE MATERIAL FOR SECONDARY BATTERY MANUFACTURED BY THE APPARATUS 审中-公开
标题翻译：用于制造二次电池的粉末制造装置和阳极活性材料
公开(公告)号：US20150072235A1
公开(公告)日：2015-03-12
申请号：US14143277
申请日：2013-12-30
申请人： MK ELECTRON CO., LTD.
发明人： Soon Ho HONG , Jong Soo CHO , Hyung Ki AHN
IPC分类号： H01M4/134 , C23C4/10 , B02C23/00 , C23C4/12
CPC分类号： H01M4/134 , B02C4/02 , B02C23/00 , B02C23/18 , C23C4/067 , C23C4/123 , H01M4/38 , H01M4/386
摘要： Provided is an apparatus for manufacturing a powder alloy used as an anode active material of a secondary battery. The apparatus includes a nozzle unit for melting and spraying an alloy, a cooling unit for cooling down the alloy sprayed from the nozzle unit, a grinding unit for grinding the alloy cooled by the cooling unit, and a first chamber accommodating the nozzle unit, the cooling unit, and the grinding unit, and maintained to be a vacuum state.
摘要翻译：提供了用作二次电池的负极活性物质的粉末合金的制造装置。该装置包括用于熔融和喷射合金的喷嘴单元，用于冷却从喷嘴单元喷射的合金的冷却单元，用于研磨由冷却单元冷却的合金的研磨单元和容纳喷嘴单元的第一室，冷却单元和研磨单元，并保持为真空状态。

3. 发明申请

US20140284794A1 TIN-BASED SOLDER BALL AND SEMICONDUCTOR PACKAGE INCLUDING THE SAME 审中-公开
标题翻译：基于TIN的焊枪和半导体封装，包括它
公开(公告)号：US20140284794A1
公开(公告)日：2014-09-25
申请号：US13818034
申请日：2012-11-07
申请人： MK ELECTRON CO., LTD.
发明人： Jae Hong Lee , II Ho Kim , Sung Jae Hong , Jeong Tak Moon
IPC分类号： B23K35/26 , H01L23/00
CPC分类号： B23K35/262 , B23K35/0244 , B23K35/26 , B23K2101/40 , H01L23/49816 , H01L24/13 , H01L24/73 , H01L2224/13111 , H01L2224/13639 , H01L2224/13647 , H01L2224/16225 , H01L2224/16227 , H01L2224/48227 , H01L2924/014 , H01L2924/15311 , H05K3/3463 , H01L2224/73265 , H01L2224/32225 , H01L2924/00012 , H01L2924/00 , H01L2924/01047 , H01L2924/01029 , H01L2924/01083 , H01L2924/01028
摘要： A tin (Sn)-based solder ball having appropriate characteristics for electronic products and a semiconductor package including the same are provided. The tin-based solder ball includes about 0.3 to 3.0 wt. % silver (Ag), about 0.4 to 0.8 wt. % copper (Cu), about 0.01 to 0.09 wt. % nickel (Ni), about 0.1% to 0.5 wt. % bismuth (Bi), and balance of tin (Sn) and unavoidable impurities.
摘要翻译：提供了一种具有适用于电子产品特性的锡（Sn）基焊料球和包括该锡球的半导体封装。锡基焊球包括约0.3至3.0wt。％银（Ag），约0.4至0.8wt。％铜（Cu），约0.01〜0.09重量％％镍（Ni），约0.1％至0.5％铋（Bi），锡（Sn）和不可避免的杂质的平衡。

4. 发明申请

US20130175688A1 TIN-BASED SOLDER BALL AND SEMICONDUCTOR PACKAGE INCLUDING THE SAME 有权
标题翻译：基于TIN的焊枪和半导体封装，包括它
公开(公告)号：US20130175688A1
公开(公告)日：2013-07-11
申请号：US13714200
申请日：2012-12-13
申请人： MK ELECTRON CO., LTD.
发明人： Young Woo LEE , Im Bok LEE , Sung Jae HONG , Jeong Tak MOON
IPC分类号： B23K35/26 , H01L23/00
CPC分类号： B23K35/262 , C22C13/00 , H01L23/3128 , H01L23/49816 , H01L23/49866 , H01L24/10 , H01L24/13 , H01L24/16 , H01L24/48 , H01L24/73 , H01L2224/13 , H01L2224/13111 , H01L2224/16225 , H01L2224/32225 , H01L2224/48227 , H01L2224/73265 , H01L2924/00014 , H01L2924/01013 , H01L2924/01327 , H01L2924/15311 , H01L2924/181 , H01L2924/00012 , H01L2924/01029 , H01L2924/01047 , H01L2924/01032 , H01L2924/01015 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A tin(Sn)-based solder ball and a semiconductor package including the same are provided. The tin-based solder ball includes about 0.2 to 4 wt. % silver(Ag), about 0.1 to 1 wt. % copper(Cu), about 0.001 to 0.3 wt. % aluminum(Al), about 0.001% to 0.1 wt. % germanium(Ge), and balance of tin and unavoidable impurities. The tin-based solder ball has a high oxidation resistance.
摘要翻译：提供基于锡（Sn）的焊球和包括其的半导体封装。锡基焊球包括约0.2至4wt。％银（Ag），约0.1至1wt。％铜（Cu），约0.001〜0.3wt。％铝（Al），约0.001％至0.1％％锗（Ge），余量为锡和不可避免的杂质。锡基焊球具有高抗氧化性。

5. 发明申请

US20020005606A1 Apparatus for manufacturing solder balls 失效
标题翻译：焊球制造装置
公开(公告)号：US20020005606A1
公开(公告)日：2002-01-17
申请号：US09964305
申请日：2001-09-26
申请人： MK Electron Co., Ltd
发明人： Jin-Hyung Lee , Byung Chul Moon , Jin Lee , Jeong-Tak Moon , Chang-Rok Oh , Jae Gyu Nam
IPC分类号： C21C001/00 , C21B007/12 , B22D041/08
CPC分类号： B23K35/0244 , B22F1/0048 , B22F9/08 , B22F2009/086 , B22F2999/00 , Y10S75/953 , B22F2202/01
摘要： An apparatus for manufacturing solder balls including a tundish, a vibrator, a cooling liquid tank an inactive atmospheric chamber, a molten metal receiving tray, a ball collecting barrel, and a cooling liquid reservoir. The tundish has orifices at its bottom. The vibrator is immersed in the molten metal of the tundish and generates vibrations. The cooling liquid tank is situated under the tundish and is provided with a cooling liquid heater at its upper and middle outer surface, a cooling liquid cooler at its lower outer surface, and a cooling liquid discharge conduit at its top. The inactive atmospheric chamber is interposed between the bottom of the tundish and the op surface of the cooling liquid. The molten metal receiving tray is seated on a portion of the inactive atmospheric chamber and is horizontally movable. The ball collecting barrel is positioned under the cooling liquid tank and is provided with a cut-off valve at its top, a ball removing valve at its bottom, and a cooling liquid supply conduit at it s upper portion. The cooling liquid reservoir is situated under the ball collecting barrel, is provided with a ball collecting sieve at its inlet and is connected with the cooling liquid discharge conduit and the cooling liquid supply conduit.
摘要翻译：一种用于制造焊球的装置，包括中间包，振动器，冷却液罐，无效大气室，熔融金属接收盘，球收集筒和冷却液储存器。中间包底部有孔。振动器浸入中间包的熔融金属中并产生振动。冷却液箱位于中间包下方，在其上外中表面设有冷却液加热器，其下外表面设有冷却液冷却器，顶部设有冷却液排出管。惰性气体室介于中间包的底部和冷却液的操作表面之间。熔融金属接收托盘位于非活动大气室的一部分上并且可水平移动。集尘桶位于冷却液箱的下方，在其顶部设有截止阀，底部设有截流阀，其上部设有冷却液供给管。冷却液贮存器位于球收集筒下方，在其入口处设有球收集筛并与冷却液排出管道和冷却液供应管道连接。

6. 发明申请

US20220212293A1 LEAD-FREE SOLDER ALLOY, SOLDER PASTE COMPRISING THE SAME, AND SEMICONDUCTOR DEVICE COMPRISING THE SAME 有权
公开(公告)号：US20220212293A1
公开(公告)日：2022-07-07
申请号：US17558989
申请日：2021-12-22
申请人： MK ELECTRON CO., LTD.
发明人： Jae Yeol SON , Jeong Tak MOON , Jae Hun SONG , Young Woo LEE , Seul Gi LEE , Min Su PARK , Hui Joong KIM
IPC分类号： B23K35/26 , B23K35/02
摘要： A lead (Pb)-free, and silver (Ag)-free solder alloy includes a primary metallic element in a content of about 1.1 wt % to about 1.9 wt %, nickel(Ni) in a content of about 0.02 wt % to about 0.09 wt %, copper (Cu) in a content of about 0.2 wt % to about 0.9 wt %, and tin (Sn) and other unavoidable impurities in remaining balance, wherein the primary metallic element is at least one selected from the group including bismuth (Bi), chromium (Cr), indium (In), antimony (Sb), silicon (Si) and zinc (Zn).

7. 发明申请

US20210366858A1 SEMICONDUCTOR PACKAGE USING CORE MATERIAL FOR REVERSE REFLOW 有权
公开(公告)号：US20210366858A1
公开(公告)日：2021-11-25
申请号：US17323705
申请日：2021-05-18
申请人： MK ELECTRON CO., LTD.
发明人： Jae Yeol SON , Jeong Tak MOON , Jae Hun SONG , Young Woo LEE , Seul Gi LEE , Min Su PARK , Hui Joong KIM
IPC分类号： H01L23/00
摘要： Provided is a semiconductor package including a first bump pad on a first substrate, a second bump pad on a second substrate, a core material for reverse reflow between the first bump pad and the second bump pad, and a solder member forming a solder layer on the core material for reverse reflow. The solder member is in contact with the first bump pad and the second bump pad. Each of a first diameter of the first bump pad and a second diameter of the second bump pad is at least about 1.1 times greater than a third diameter of the core material for reverse reflow. The core material for reverse reflow includes a core, a first metal layer directly coated on the core, and a second metal layer directly coated on the first metal layer.

8. 发明申请

US20160244891A1 SOLDER BALL FOR FLUXLESS BONDING, METHOD OF MANUFACTURING THE SAME, AND METHOD OF FORMING SOLDER BUMP 审中-公开
标题翻译：用于无焊接的焊接球，其制造方法和形成焊接块的方法
公开(公告)号：US20160244891A1
公开(公告)日：2016-08-25
申请号：US15050708
申请日：2016-02-23
申请人： MK ELECTRON CO., LTD.
发明人： Jae Yeol SON , Jeong Tak MOON , Jae Hun SONG , Young Woo LEE , Eung Jae KIM , Ik Joo MAENG , Chan Goo YOO
IPC分类号： C25D3/12 , C25D5/12 , C25D7/00 , C23C18/16 , B23K35/02 , B23K35/26 , B23K35/22 , C23C18/31 , C25D3/48 , B23K1/00
CPC分类号： C25D3/12 , B23K1/0016 , B23K1/008 , B23K1/20 , B23K3/0623 , B23K35/0244 , B23K35/226 , B23K35/262 , B23K2101/42 , C23C18/1635 , C23C18/165 , C23C18/31 , C25D3/48 , C25D5/10 , C25D7/00
摘要： A solder ball for fluxless bonding includes a solder core, a first metal layer on a surface of the solder core, and a second metal layer on the first metal layer. The first metal layer includes at least one of nickel (Ni), silver (Ag), zinc (Zn), tin (Sn), chrome (Cr), antimony (Sb), platinum (Pt), palladium (Pd), aluminum (Al), or an alloy thereof. The second metal layer includes gold (Au). As the above solder ball for fluxless bonding is in use, a solder bump having high reliability may be formed via a relatively short, low cost, and simple process.
摘要翻译：用于无助焊接的焊球包括焊料芯，焊料芯表面上的第一金属层和第一金属层上的第二金属层。第一金属层包括镍（Ni），银（Ag），锌（Zn），锡（Sn），铬（Cr），锑（Sb），铂（Pt），钯（Pd）（Al）或其合金。第二金属层包括金（Au）。由于使用上述无助焊接用焊料球，所以可以通过相对较短，成本低且简单的工艺形成具有高可靠性的焊料凸块。

9. 发明申请

US20160141614A1 NEGATIVE ACTIVE MATERIAL FOR SECONDARY BATTERY, NEGATIVE ELECTRODE AND LITHIUM BATTERY EACH INCLUDING NEGATIVE ACTIVE MATERIAL, AND METHOD OF PREPARING NEGATIVE ACTIVE MATERIAL 审中-公开
标题翻译：用于二次电池，负极和锂电池的负极活性材料，包括负极活性材料，以及制备负极活性材料的方法
公开(公告)号：US20160141614A1
公开(公告)日：2016-05-19
申请号：US14931748
申请日：2015-11-03
申请人： Samsung SDI Co., Ltd. , MK ELECTRON CO,. LTD.
发明人： Soonsung Suh , Jaehyuk Kim , Jongsoo Cho , Soonho Hong , Chansoon Kang , Kyuhwan Oh
IPC分类号： H01M4/38 , H01M10/0525
CPC分类号： H01M4/386 , C22C1/02 , H01M4/134 , H01M4/364 , H01M10/0525
摘要： Provided is a negative active material for a secondary battery which provides high capacity, high efficiency charging-discharging characteristics. The negative active material includes: a silicon single phase; and a silicon-metal alloy phase interfaced with the silicon single phase and surrounding the silicon single phase, wherein an X-ray diffraction spectrum of the negative active material has first and second peaks that are originated from the silicon-metal alloy phase, and the first peak is located at 49.1+/−0.5 degrees (°) and the second peak is located at 38.0+/−0.5 degrees (°), and a diffraction intensity of the first peak is 2 or less times that of to the second peak.
摘要翻译：提供了一种提供高容量，高效率充电 - 放电特性的用于二次电池的负极活性材料。负极活性物质包括：硅单相; 以及与硅单相相接并围绕硅单相的硅 - 金属合金相，其中所述负极活性材料的X射线衍射光谱具有源自所述硅 - 金属合金相的第一和第二峰，并且第一峰位于49.1 +/- 0.5度（°），第二峰位于38.0 +/- 0.5度（°），第一峰的衍射强度为第二峰的2倍以下。

10. 发明申请

US20150041707A1 NEGATIVE ACTIVE MATERIAL FOR SECONDARY BATTERY AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：用于二次电池的负极活性材料及其制造方法
公开(公告)号：US20150041707A1
公开(公告)日：2015-02-12
申请号：US14087798
申请日：2013-11-22
申请人： MK ELECTRON CO., LTD.
发明人： Sung Min JEON , Jong Soo CHO , Hyung Ki AHN
IPC分类号： H01M4/36 , H01M4/38 , H01M4/04
CPC分类号： H01M4/364 , C22C19/007 , C22C30/00 , H01M4/0488 , H01M4/386
摘要： A negative active material for a secondary battery that provides high capacity, high efficiency charging and discharging characteristics includes: a silicon single phase; and a silicon-metal alloy phase by which the silicon single phase is bounded, wherein the negative active material comprises 5 to 30 wt % of nickel, 5 to 30 wt % of titanium, and 40 to 90 wt % of silicon, the negative active material has a first peak of the silicon-metal alloy phase in an X-ray diffraction analysis spectrum, the silicon single phase is finely distributed in the silicon-metal single phase by mechanical alloying, and the first peak resulting from the (501) surface of the silicon-metal alloy phase has a greater value than the first peak resulting from the (501) surface of the silicon-metal alloy phase that is not subjected to the mechanical alloying, by 0.6° to 0.9°.
摘要翻译：提供高容量，高效率充电和放电特性的用于二次电池的负极活性材料包括：硅单相; 以及硅单相界定的硅 - 金属合金相，其中所述负极活性材料包含5至30重量％的镍，5至30重量％的钛和40至90重量％的硅，所述负极活性材料材料在X射线衍射分析光谱中具有硅 - 金属合金相的第一个峰，硅单相通过机械合金化精细分布在硅 - 金属单相中，并且由（501）表面产生的第一个峰的硅 - 金属合金相的值比由未进行机械合金化的硅 - 金属合金相的（501）表面产生的第一峰值大0.6°〜0.9°。

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