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    • 1. 发明授权
    • Method of fabricating light emitting device and thus-fabricated light emitting device
    • 制造发光器件和由此制造的发光器件的方法
    • US07663151B2
    • 2010-02-16
    • US11587632
    • 2005-04-13
    • Hitoshi IkedaKingo SuzukiAkio Nakamura
    • Hitoshi IkedaKingo SuzukiAkio Nakamura
    • H01L33/00
    • H01L33/22H01L33/0079H01L33/0095H01L33/30
    • A light emitting device chip is obtained by dicing a light emitting device wafer having a light emitting layer section 24 based on a double heterostructure in which a first-conductivity-type cladding layer 6, an active layer 5 and an second-conductivity-type cladding layer 4, each of which being composed of a compound semiconductor having a composition allowing lattice matching with GaAs, out of compound semiconductors expressed by formula (AlxGa1-x)yIn1-yP (where, 0≦x≦1, 0≦y≦1), are stacked in this order, and having the (100) surface appeared on the main surface thereof, and GaP transparent semiconductor layers 20, 90 stacked on the light emitting layer section 24 as being agreed with the crystal orientation thereof, so that the {100} surfaces appear on the side faces of the GaP transparent semiconductor layer. Accordingly, there can be provided a method of fabricating a light emitting device having the AlGaInP light emitting layer section and the GaP transparent semiconductor layers, less causative of failures such as edge chipping during the dicing.
    • 通过基于双异质结构对具有发光层部分24的发光器件晶片进行切割来获得发光器件芯片,其中第一导电型包覆层6,有源层5和第二导电型包层 (Al x Ga 1-x)y In 1-y P表示的化合物半导体中的每一个由具有允许与GaAs晶格匹配的组成的化合物半导体构成,其中,0≤x≤1,0< y <= 1)按顺序堆叠,并且在其主表面上出现(100)表面,并且与发光层部分24堆叠在一起的GaP透明半导体层20,90与晶体取向一致 ,使得{100}表面出现在GaP透明半导体层的侧面上。 因此,可以提供一种制造具有AlGaInP发光层部分和GaP透明半导体层的发光器件的方法,其不利于在切割期间的边缘切屑等故障。
    • 3. 发明授权
    • Light emitting device and method of fabricating the same
    • 发光元件及其制造方法
    • US06995401B2
    • 2006-02-07
    • US10690479
    • 2003-10-22
    • Masato YamadaNobuhiko NotoMasanobu TakahashiKingo SuzukiShinji NozakiKazuo UchidaHiroshi Morisaki
    • Masato YamadaNobuhiko NotoMasanobu TakahashiKingo SuzukiShinji NozakiKazuo UchidaHiroshi Morisaki
    • H01L27/15
    • H01L33/14H01L33/20H01L33/42H01L2224/48091H01L2224/48247H01L2224/48465Y10S257/918H01L2924/00014H01L2924/00
    • A light emitting device having an oxide transparent electrode layer as an emission drive electrode, and designed so that damage possibly occurs during bonding of electrode wires to the bonding pads is less influential to a light emitting layer portion is disclosed. The light emitting device has the light emitting layer portion composed of a compound semiconductor and has a double heterostructure in which a first-conductivity-type cladding layer, an active layer and a second-conductivity-type cladding layer are stacked in this order; and the light emitting layer portion is applied with emission drive voltage through an oxide transparent electrode layer formed so as to cover the main surface of the second-conductivity-type cladding layer. A bonding pad composed of a metal is disposed on the oxide transparent electrode layer, and to the bonding pad an electrode wire for current supply is bonded. Between the second-conductivity cladding layer and the oxide transparent electrode layer, a cushion layer composed of a compound semiconductor having a dopant concentration lower than that of the second-conductivity-type cladding layer is disposed.
    • 公开了一种具有氧化物透明电极层作为发光驱动电极的发光元件,其设计成使得在电极线接合到接合焊盘时可能发生的损伤对于发光层部分影响较小。 发光器件具有由化合物半导体构成的发光层部分,并且具有双重异质结构,其中第一导电型包层,有源层和第二导电型包覆层依次层叠; 并且通过形成为覆盖第二导电型包层的主表面的氧化物透明电极层施加发光驱动电压。 在氧化物透明电极层上设置由金属构成的接合焊盘,并且接合用于电流供给用的电极线。 在第二导电率包层和氧化物透明电极层之间设置由掺杂剂浓度低于第二导电型包覆层的化合物半导体构成的缓冲层。
    • 5. 发明申请
    • Method of Fabricating Light Emitting Device and Thus-Fabricated Light Emitting Device
    • 制造发光装置和如此制造的发光装置的方法
    • US20070224714A1
    • 2007-09-27
    • US11587632
    • 2005-04-13
    • Hitoshi IkedaKingo SuzukiAkio Nakamura
    • Hitoshi IkedaKingo SuzukiAkio Nakamura
    • H01L33/00
    • H01L33/22H01L33/0079H01L33/0095H01L33/30
    • A light emitting device chip is obtained by dicing a light emitting device wafer having a light emitting layer section 24 based on a double heterostructure in which a first-conductivity-type cladding layer 6, an active layer 5 and an second-conductivity-type cladding layer 4, each of which being composed of a compound semiconductor having a composition allowing lattice matching with GaAs, out of compound semiconductors expressed by formula (AlxGa1-x)yIn1-yP (where, 0≦x≦1, 0≦y≦1), are stacked in this order, and having the (100) surface appeared on the main surface thereof, and GaP transparent semiconductor layers 20, 90 stacked on the light emitting layer section 24 as being agreed with the crystal orientation thereof, so that the {100} surfaces appear on the side faces of the GaP transparent semiconductor layer. Accordingly, there can be provided a method of fabricating a light emitting device having the AlGaInP light emitting layer section and the GaP transparent semiconductor layers, less causative of failures such as edge chipping during the dicing.
    • 通过基于双异质结构对具有发光层部分24的发光器件晶片进行切割来获得发光器件芯片,其中第一导电型包覆层6,有源层5和第二导电型包层 层(其由具有允许与GaAs晶格匹配的组成的化合物半导体)组成,由式(Al x Ga 1-x N)表示的化合物半导体中, 在1-y

      (其中,0 <= x <= 1,0 <= y <= 1)中按顺序堆叠,并且具有( 100)表面,以及与其晶体取向一致的层叠在发光层部分24上的GaP透明半导体层20,90,使得{100}表面出现在GaP的侧面 透明半导体层。 因此,可以提供一种制造具有AlGaInP发光层部分和GaP透明半导体层的发光器件的方法,其不利于在切割期间的边缘切屑等故障。

    • 6. 发明授权
    • GaP-base semiconductor light emitting device
    • GaP基半导体发光器件
    • US06700139B2
    • 2004-03-02
    • US10227840
    • 2002-08-27
    • Kingo SuzukiHitoshi IkedaYasutsugu Kaneko
    • Kingo SuzukiHitoshi IkedaYasutsugu Kaneko
    • H01L3300
    • H01L33/30H01L24/32H01L33/22H01L2224/32245H01L2224/32257H01L2224/45144H01L2224/48091H01L2224/48247H01L2224/73265H01L2224/92247H01L2924/00014H01L2924/00
    • The main surface on the side of a p-type layer of a GaP-base semiconductor is defined as a first main surface, and the main surface opposite thereto as a second main surface. The second main surface is lapped and then etched using aqua regia to thereby collectively form thereon specular concave curved surfaces which swell inwardly into the semiconductor substrate in order to enhance total reflection of light. On the other hand, the area on the surface of semiconductor substrate excluding that for forming a first contact layer and excluding the second main surface are subjected to anisotropic etching to thereby collectively form outwardly-swelling convex curved surfaces in order to reduce total reflection of light. A second contact layer (second electrode) to be formed on the second main surface is composed of an alloy of Au, Si and Ni, and a first contact layer to be formed on the first main surface is composed of an alloy of Au as combined with either of Be and Zn. This successfully provides a GaP-base semiconductor light emitting device which can ensure a satisfactory level of improvement in the luminance even though the emission mechanism thereof relies upon indirect transition.
    • GaP基半导体的p型层侧的主表面被定义为第一主表面,与其相对的主表面作为第二主表面。 第二主表面被研磨,然后用王水蚀刻,从而在其上共同形成镜面凹入的曲面,其向内膨胀到半导体衬底中,以增强光的全反射。 另一方面,除了用于形成第一接触层并且不包括第二主表面的半导体衬底的表面上的区域进行各向异性蚀刻,从而共同形成向外膨胀的凸曲面,以减少光的全反射 。 要形成在第二主表面上的第二接触层(第二电极)由Au,Si和Ni的合金构成,并且在第一主表面上形成的第一接触层由合并的Au构成 与Be和Zn中的任一个。 这成功地提供了一种GaP基半导体发光器件,其能够确保亮度的令人满意的改善水平,即使其发光机制依赖于间接转换。