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1. 发明授权

US07439621B1 Radio frequency signal processing device 失效
标题翻译：射频信号处理装置
公开(公告)号：US07439621B1
公开(公告)日：2008-10-21
申请号：US09707844
申请日：2000-11-08
申请人： Hidetoshi Ishida , Kazuo Miyatsuji , Hidetoshi Furukawa , Tsuyoshi Tanaka , Daisuke Ueda
发明人： Hidetoshi Ishida , Kazuo Miyatsuji , Hidetoshi Furukawa , Tsuyoshi Tanaka , Daisuke Ueda
IPC分类号： H01L23/34 , H01L23/552
CPC分类号： H01L23/552 , H01L27/0207 , H01L27/088 , H01L2223/6644 , H01L2924/0002 , H01L2924/00
摘要： The RF device of the present invention includes: a semiconductor substrate; and first and second semiconductor components provided on the substrate. Each of the components includes source electrodes, a gate electrode and a drain electrode. And multiple through holes, which pass through the substrate in the thickness direction, are opened in a region of the substrate between the two components. To enhance the effect of suppressing electrical interference between the components, a gap between two adjacent ones of the through holes is preferably smaller than the thickness of the substrate.
摘要翻译：本发明的RF器件包括：半导体衬底; 以及设置在基板上的第一和第二半导体部件。每个组件包括源电极，栅电极和漏电极。并且在两个部件之间的基板的区域中打开穿过基板的厚度方向上的多个通孔。为了增强抑制部件之间的电气干扰的效果，两个相邻的通孔之间的间隙优选小于基板的厚度。

2. 发明授权

US6166429A Lead-frame package with shield means between signal terminal electrodes 失效
标题翻译：信号端子电极之间带有屏蔽装置的引线框架封装
公开(公告)号：US6166429A
公开(公告)日：2000-12-26
申请号：US33240
申请日：1998-03-03
申请人： Hidetoshi Ishida , Kazuo Miyatsuji , Daisuke Ueda
发明人： Hidetoshi Ishida , Kazuo Miyatsuji , Daisuke Ueda
IPC分类号： H01L23/12 , H01L23/495 , H01L23/50 , H01L23/522 , H01L23/48
CPC分类号： H01L23/49503 , H01L23/522 , H01L24/48 , H01L24/49 , H01L2224/05554 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49171 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/10161 , H01L2924/19107 , H01L2924/3025 , H01L2924/00 , H01L2224/45099 , H01L2224/05599
摘要： A semiconductor device has the following structure: a lead frame 2 is disposed on the center of a package 1, signal terminal electrodes 3 through 7 are disposed on edges of the package, a semiconductor chip 8 is mounted on the lead frame 2, a grounding electrode 16 having a grounding potential is disposed between the signal terminal electrodes 4 and 5, and a grounding electrode having a grounding potential is disposed between the signal terminal electrodes 5 and 6. This structure increases an electrical separation between the signal terminal electrodes.
摘要翻译：半导体器件具有以下结构：引线框架2设置在封装1的中心，信号端子电极3至7设置在封装的边缘上，半导体芯片8安装在引线框架2上，接地具有接地电位的电极16设置在信号端子电极4和5之间，并且具有接地电位的接地电极设置在信号端子电极5和6之间。这种结构增加了信号端子电极之间的电气间隔。

3. 发明授权

US5903178A Semiconductor integrated circuit 失效
标题翻译：半导体集成电路
公开(公告)号：US5903178A
公开(公告)日：1999-05-11
申请号：US948033
申请日：1997-10-09
申请人： Kazuo Miyatsuji , Daisuke Ueda
发明人： Kazuo Miyatsuji , Daisuke Ueda
IPC分类号： H03F3/193 , H03K17/00 , H03K17/693 , H01P1/22
CPC分类号： H03F3/1935 , H03K17/693 , H03F2200/366 , H03F2200/372 , H03F2200/72 , H03K2217/0036
摘要： A drain and a source of a field-effect transistor are connected to first and second signal terminals, respectively. A first control terminal is connected to a gate. A first resistor is interposed between the gate and the first control terminal. Capacitors are interposed between the source/drain and the first and second signal terminals, respectively. A control terminal is connected to at least one of the source/drain via a second resistor. High frequency signals supplied through the first signal terminal is sent through the field-effect transistor and outputted through the second signal terminal, and a quantity of the transmitted high frequency signals is controlled by a control voltage signal applied across the first and second control terminals. This structure provides a high frequency semiconductor integrated circuits which reduces a power consumption and an occupied area, increases a switchable power, suppresses output distortion, and simplifies a peripheral circuit.
摘要翻译：场效应晶体管的漏极和源极分别连接到第一和第二信号端子。第一控制端子连接到门。第一电阻器插在栅极和第一控制端子之间。电容器分别介于源极/漏极与第一和第二信号端子之间。控制端子经由第二电阻器连接到源极/漏极中的至少一个。通过第一信号端子提供的高频信号通过场效应晶体管发送并通过第二信号端子输出，并且通过施加在第一和第二控制端子上的控制电压信号来控制发送的高频信号的数量。该结构提供了降低功耗和占用面积的高频半导体集成电路，增加可切换功率，抑制输出失真，并且简化了外围电路。

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