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1. 发明授权

US07112810B2 Ion implanting apparatus and ion implanting method using the same 有权
标题翻译：离子注入装置和使用其的离子注入方法
公开(公告)号：US07112810B2
公开(公告)日：2006-09-26
申请号：US10964735
申请日：2004-10-15
申请人： Gyeong-Su Keum , Seung-Ki Chae , Hyung-Sik Hong , Sang-Yeob Cha , Jae-Hyun Han , Tae-Sub Im , Hyun-Kyu Kang , Gil-Jung Yun , Doo-Guen Song
发明人： Gyeong-Su Keum , Seung-Ki Chae , Hyung-Sik Hong , Sang-Yeob Cha , Jae-Hyun Han , Tae-Sub Im , Hyun-Kyu Kang , Gil-Jung Yun , Doo-Guen Song
IPC分类号： H01J37/08 , H01J37/244
CPC分类号： H01J37/3171 , H01J37/304 , H01J2237/0044
摘要： In an ion implanting apparatus and an ion implanting method using the same, the ion implanting apparatus includes a disk chamber containing a rotatable disk, a wafer mounted on the rotatable disk, and a charge sensor for monitoring a charged state of the wafer, the charge sensor being fixed to the disk chamber to be adjacent to and facing a surface of the wafer. An output of the charge sensor may be used as feedback to control the charged state of the wafer.
摘要翻译：在离子注入装置和使用其的离子注入装置的离子注入方法中，离子注入装置包括容纳可旋转盘的盘室，安装在可旋转盘上的晶片和用于监测晶片充电状态的充电传感器，传感器固定到盘室以与晶片的表面相邻并且面对晶片的表面。电荷传感器的输出可以用作反馈以控制晶片的充电状态。

2. 发明申请

US20060060797A1 Ion implanters having an arc chamber that affects ion current density 有权
标题翻译：离子注入机具有影响离子电流密度的电弧室
公开(公告)号：US20060060797A1
公开(公告)日：2006-03-23
申请号：US11227511
申请日：2005-09-15
申请人： Ui-hui Kwon , Gyeong-su Keum , Won-young Chung , Kwang-ho Cha , Young-tae Kim , Seung-ki Chae , Jai-hyung Won , Young-kwan Park , Tai-kyung Kim
发明人： Ui-hui Kwon , Gyeong-su Keum , Won-young Chung , Kwang-ho Cha , Young-tae Kim , Seung-ki Chae , Jai-hyung Won , Young-kwan Park , Tai-kyung Kim
IPC分类号： H01J37/08
CPC分类号： H01J37/08 , H01J27/08 , H01J2237/082 , H01J2237/31703
摘要： The present invention can provide ion implanter devices including an arc chamber including at least a first inner region and a second inner region, an electron emitting device disposed in the arc chamber adjacent the first inner region and adapted to emit electrons, an electron returning device disposed in the arc chamber adjacent the second inner region and adapted to return at least some of the electrons emitted from the electron emitting device into the second inner region; and an electric field and magnetic field generating device adapted to provide a magnetic field to the arc chamber, wherein at least one inner wall of the arc chamber has a convex surface.
摘要翻译：本发明可以提供包括至少包括第一内部区域和第二内部区域的电弧室的离子注入机装置，设置在与第一内部区域相邻并适于发射电子的电弧室中的电子发射装置，设置电子返回装置在所述电弧室中与所述第二内部区域相邻并且适于将从所述电子发射器件发射的至少一些电子返回到所述第二内部区域; 以及适于向所述电弧室提供磁场的电场和磁场产生装置，其中所述电弧室的至少一个内壁具有凸形表面。

3. 发明授权

US07652264B2 Filament member, ion source, and ion implantation apparatus 有权
标题翻译：长丝构件，离子源和离子注入装置
公开(公告)号：US07652264B2
公开(公告)日：2010-01-26
申请号：US11544595
申请日：2006-10-10
申请人： Ui-Hui Kwon , Tai-Kyung Kim , Gyeong-Su Keum , Won-Young Chung , Kwang-Ho Cha
发明人： Ui-Hui Kwon , Tai-Kyung Kim , Gyeong-Su Keum , Won-Young Chung , Kwang-Ho Cha
IPC分类号： H01T23/00
CPC分类号： H01T23/00 , H01J27/08 , H01J37/08 , H01J2237/31701
摘要： A filament member configured to discharge thermions may be employed in an ion source of an ion implantation apparatus. A filament member may include an anode disposed around a central portion of the filament member, a cathode disposed around a periphery of the filament and/or enclosing the anode, and at least one conductive path disposed between the anode and the cathode to discharge the thermions.
摘要翻译：构造成排出热量的细丝构件可以用于离子注入装置的离子源。长丝构件可以包括围绕灯丝构件的中心部分设置的阳极，围绕灯丝的外围设置和/或包围阳极的阴极以及设置在阳极和阴极之间的至少一个导电路径，。

4. 发明申请

US20080289576A1 Plasma based ion implantation system 审中-公开
标题翻译：等离子体离子注入系统
公开(公告)号：US20080289576A1
公开(公告)日：2008-11-27
申请号：US12153703
申请日：2008-05-22
申请人： Young dong Lee , Yuri Tolmachev , Vladimir Volynets , Vasily Pashkovskiy , Andrey Ushakov , Gyeong Su Keum , Jae Hyun Han , Dong Cheol Kim , Hyung Chul Cho
发明人： Young dong Lee , Yuri Tolmachev , Vladimir Volynets , Vasily Pashkovskiy , Andrey Ushakov , Gyeong Su Keum , Jae Hyun Han , Dong Cheol Kim , Hyung Chul Cho
IPC分类号： C23C16/44
CPC分类号： H01J37/32449 , H01J37/32357 , H01J37/32412 , H01J37/3244 , H01J37/3255 , H01J37/32862 , H01L21/2236
摘要： A plasma based ion implantation system capable of generating a capacitively coupled plasma having beneficial characteristics for an ion implantation, including the generation of necessary ions and radicals only for an ion implantation process instead of generating an inductively coupled plasma, which generates unnecessary ions and excessively dissociates radicals. The plasma based ion implantation system easily controls plasma ions implanted by cleaning a vacuum chamber, minimizes problems of unnecessary deposition and occurrence of contaminants and increases the number of components used only for the plasma ion implantion by reducing the deposition of polymer layer on a workpiece. The plasma based ion implantation system easily control uniformity of the plasma by using a flat type electrode, thereby easily ensuring uniformity of plasma ions implanted into the workpiece.
摘要翻译：一种等离子体离子注入系统，其能够产生具有用于离子注入的有利特性的电容耦合等离子体，包括仅为离子注入工艺产生必需的离子和自由基，而不是产生电感耦合等离子体，其产生不必要的离子并过度离解激进分子基于等离子体的离子注入系统容易地通过清洁真空室来控制植入的等离子体离子，从而最小化不必要的沉积和污染物的出现的问题，并且通过减少聚合物层在工件上的沉积而增加仅用于等离子体离子注入的组分的数量。基于等离子体的离子注入系统通过使用平面型电极容易地控制等离子体的均匀性，从而容易地确保注入到工件中的等离子体离子的均匀性。

5. 发明申请

US20070077366A1 Plasma doping method and plasma doping apparatus for performing the same 审中-公开
标题翻译：等离子体掺杂法和等离子体掺杂装置
公开(公告)号：US20070077366A1
公开(公告)日：2007-04-05
申请号：US11542468
申请日：2006-10-04
申请人： Gyeong-Su Keum , Ji-Hyun Hur , Jai-Hyung Won , No-Hyun Huh , Jae-Joon Oh
发明人： Gyeong-Su Keum , Ji-Hyun Hur , Jai-Hyung Won , No-Hyun Huh , Jae-Joon Oh
IPC分类号： C23C14/00 , H05H1/24 , G21G5/00
CPC分类号： C23C14/48 , H01L21/2236
摘要： A method of doping ions into an object using plasma, including providing a doping gas between a first electrode and a second electrode, where an object is disposed between the first and the second electrodes, applying a first power to the first electrode and grounding the second electrode, exciting the doping gas to a plasma state, directing ions toward the object to be doped, applying a second power to the second electrode and grounding the first electrode, and counting a dose of the ions directed toward the second electrode, and an apparatus for performing the same.
摘要翻译：一种使用等离子体将离子掺杂到物体中的方法，包括在第一电极和第二电极之间提供掺杂气体，其中物体设置在第一和第二电极之间，向第一电极施加第一电力并将第二电极接地将掺杂气体激发到等离子体状态，将离子引向待掺杂的物体，向第二电极施加第二功率并将第一电极接地，并计数朝向第二电极的离子的剂量;以及设备执行相同。

6. 发明申请

US20050133737A1 Ion implanting apparatus and ion implanting method using the same 有权
标题翻译：离子注入装置和使用其的离子注入方法
公开(公告)号：US20050133737A1
公开(公告)日：2005-06-23
申请号：US10964735
申请日：2004-10-15
申请人： Gyeong-Su Keum , Seung-Ki Chae , Hyung-Sik Hong , Sang-Yeob Cha , Jae-Hyun Han , Tae-Sub Im , Hyun-Kyu Kang , Gil-Jun Yun , Doo-Guen Song
发明人： Gyeong-Su Keum , Seung-Ki Chae , Hyung-Sik Hong , Sang-Yeob Cha , Jae-Hyun Han , Tae-Sub Im , Hyun-Kyu Kang , Gil-Jun Yun , Doo-Guen Song
IPC分类号： H01L21/265 , H01J37/08 , H01J37/304 , H01J37/317
CPC分类号： H01J37/3171 , H01J37/304 , H01J2237/0044
摘要： In an ion implanting apparatus and an ion implanting method using the same, the ion implanting apparatus includes a disk chamber containing a rotatable disk, a wafer mounted on the rotatable disk, and a charge sensor for monitoring a charged state of the wafer, the charge sensor being fixed to the disk chamber to be adjacent to and facing a surface of the wafer. An output of the charge sensor may be used as feedback to control the charged state of the wafer.
摘要翻译：在离子注入装置和使用其的离子注入装置的离子注入方法中，离子注入装置包括容纳可旋转盘的盘室，安装在可旋转盘上的晶片和用于监测晶片充电状态的充电传感器，传感器固定到盘室以与晶片的表面相邻并且面对晶片的表面。电荷传感器的输出可以用作反馈以控制晶片的充电状态。

7. 发明授权

US06903336B2 Polarity exchanger and ion implanter having the same 失效
标题翻译：极性交换器和离子注入机具有相同的特性
公开(公告)号：US06903336B2
公开(公告)日：2005-06-07
申请号：US10730998
申请日：2003-12-10
申请人： Gyeong-Su Keum , Gum-Hyun Shin , Hyung-Sik Hong , Kyue-Sang Choi , Chung-Hun Park
发明人： Gyeong-Su Keum , Gum-Hyun Shin , Hyung-Sik Hong , Kyue-Sang Choi , Chung-Hun Park
IPC分类号： H01J37/30 , H01J37/08 , H01J37/317 , H01J37/313
CPC分类号： H01J37/3171 , H01J37/08
摘要： A polarity exchanger and ion implanter include a stripping canal for passing an ion beam therethrough, a gas supply unit for providing a stripping gas into the stripping canal to change a polarity of the ion beam, a gas circulation unit for circulating the stripping gas, a flow meter for measuring a flow rate of the stripping gas, an ammeter for measuring a driving current applied to the gas circulation unit for operating the gas circulation unit, and a monitoring unit for generating a control signal to control a process for changing the polarity of the ion beam in accordance with the measured flow rate of the stripping gas and the measured driving current. The polarity exchanger and ion implanter having the polarity exchanger may prevent generation of metallic contaminants caused by a flow rate variation of the stripping gas or deterioration of a component of the gas circulation unit.
摘要翻译：极性交换器和离子注入机包括用于使离子束通过的剥离管，用于将汽提气体提供到汽提道中以改变离子束的极性的气体供应单元，用于循环汽提气体的气体循环单元用于测量汽提气体的流量的流量计，用于测量施加到用于操作气体循环单元的气体循环单元的驱动电流的电流表，以及用于产生控制信号以控制改变极性的处理的监视单元离子束根据测得的汽提气体流速和测得的驱动电流。具有极性交换器的极性交换器和离子注入机可以防止由汽提气体的流量变化或气体循环单元的部件的劣化引起的金属污染物的产生。

8. 发明授权

US06590378B2 Real time parameter monitoring apparatus for high voltage chamber in semiconductor wafer processing system 失效
标题翻译：半导体晶圆处理系统高压室实时参数监控装置
公开(公告)号：US06590378B2
公开(公告)日：2003-07-08
申请号：US09996586
申请日：2001-11-30
申请人： Sang-Mun Chon , Gyeong-Su Keum , Hyung-Sik Hong
发明人： Sang-Mun Chon , Gyeong-Su Keum , Hyung-Sik Hong
IPC分类号： G01R3100
CPC分类号： G01R15/241
摘要： A parameter monitoring apparatus for a high voltage chamber in a semiconductor wafer processing system monitors parameters in the high voltage chamber in real time by converting an electrical signal generated from the high voltage chamber into an optical signal using an electro-optical converter. The optical signal is then converted back into an electrical signal again by an opto-electrical converter. The parameters can be monitored in real time without damaging measurement devices, since they are not influenced by the potential difference between the high voltage chamber and the measurement device.
摘要翻译：用于半导体晶片处理系统中的高压室的参数监视装置通过使用电光转换器将从高压室产生的电信号转换为光信号来实时监视高压室中的参数。然后光信号再次通过光电转换器转换回电信号。可以实时监测参数，而不会损坏测量装置，因为它们不受高压室和测量装置之间的电位差的影响。

9. 发明申请

US20070114436A1 Filament member, ion source, and ion implantation apparatus 审中-公开
标题翻译：长丝构件，离子源和离子注入装置
公开(公告)号：US20070114436A1
公开(公告)日：2007-05-24
申请号：US11594939
申请日：2006-11-09
申请人： Gyeong-Su Keum , Jai-Hyung Won , No-Hyun Huh , Seong-Gu Kim , Kwang-Ho Cha , Ui-Hui Kwon
发明人： Gyeong-Su Keum , Jai-Hyung Won , No-Hyun Huh , Seong-Gu Kim , Kwang-Ho Cha , Ui-Hui Kwon
IPC分类号： H01T23/00
CPC分类号： H01T23/00 , H01J27/08 , H01J37/08 , H01J2237/31701
摘要： A filament member, ion source, and an ion implantation apparatus. The filament member may have a plate shape, and the thermoelectron emitter may include slots and a plurality of conductive paths disposed around the slots to emit thermoelectrons.
摘要翻译：长丝构件，离子源和离子注入装置。长丝构件可以具有板形，并且热电子发射器可以包括槽和围绕槽布置的多个导电路径以发射热电子。

10. 发明申请

US20050022742A1 Chemical vapor deposition processing equipment for use in fabricating a semiconductor device 审中-公开
标题翻译：用于制造半导体器件的化学气相沉积处理设备
公开(公告)号：US20050022742A1
公开(公告)日：2005-02-03
申请号：US10900150
申请日：2004-07-28
申请人： Hyung-Sik Hong , Gyeong-Su Keum , Yong-Gab Kim , Chung-Hun Park , Do-In Bae , Seung-Ki Chae , Jung-Hun Cho
发明人： Hyung-Sik Hong , Gyeong-Su Keum , Yong-Gab Kim , Chung-Hun Park , Do-In Bae , Seung-Ki Chae , Jung-Hun Cho
IPC分类号： H01L21/205 , C23C16/458 , H01L21/00 , C23C16/00
CPC分类号： H01L21/67103 , C23C16/4586
摘要： Chemical vapor deposition (CVD) processing equipment for use in fabricating a semiconductor device requiring deposition of an insulation layer or a metal layer includes a chamber having an exhaust line in a lower central portion thereof, a heater block for supporting a wafer to be supplied in an interior of the chamber, the heater block having a heating plate in an interior thereof, a support shaft for supporting the heater block, and an electrical wire for providing an electrical connection to the heating plate. The support shaft extends through a bottom of the chamber. The electrical wire extends through the bottom of the chamber within the support shaft.
摘要翻译：用于制造需要沉积绝缘层或金属层的半导体器件的化学气相沉积（CVD）处理设备包括在其下部中心具有排气管的腔室，用于支撑要供应的晶片的加热器块该室的内部，其内部具有加热板的加热器块，用于支撑加热器块的支撑轴和用于提供与加热板的电连接的电线。支撑轴延伸穿过腔室的底部。电线在支撑轴内延伸穿过腔室的底部。

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