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1. 发明申请

US20080305619A1 METHOD OF FORMING GROUP IV SEMICONDUCTOR JUNCTIONS USING LASER PROCESSING 审中-公开
标题翻译：使用激光加工形成IV族半导体结的方法
公开(公告)号：US20080305619A1
公开(公告)日：2008-12-11
申请号：US12114141
申请日：2008-05-02
申请人： Francesco Lemmi , Andreas Meisel , Homer Antoniadis
发明人： Francesco Lemmi , Andreas Meisel , Homer Antoniadis
IPC分类号： H01L21/20 , H01L21/02
CPC分类号： H01L31/182 , H01L21/0237 , H01L21/02524 , H01L21/02532 , H01L21/02601 , H01L21/02628 , H01L21/02675 , H01L31/03682 , H01L31/03921 , H01L31/068 , H01L31/077 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： A method forming a Group IV semiconductor junction on a substrate is disclosed. The method includes depositing a first set Group IV semiconductor nanoparticles on the substrate. The method also includes applying a first laser at a first laser wavelength, a first fluence, a first pulse duration, a first number of repetitions, and a first repetition rate to the first set Group IV semiconductor nanoparticles to form a first densified film with a first thickness, wherein the first laser wavelength and the first fluence are selected to limit a first depth profile of the first laser to the first thickness. The method further includes depositing a second set Group IV semiconductor nanoparticles on the first densified film. The method also includes applying a second laser at a second laser wavelength, a second fluence, a second pulse duration, a second number of repetitions, and a second repetition rate to the second set Group IV semiconductor nanoparticles to form a second densified film with a second thickness, wherein the second laser wavelength and the second fluence are selected to limit a second depth profile of the second laser to the second thickness.
摘要翻译：公开了一种在衬底上形成IV族半导体结的方法。该方法包括在衬底上沉积第一组IV族半导体纳米颗粒。该方法还包括将第一激光波长的第一激光，第一注量，第一脉冲持续时间，第一次重复和第一重复率应用于第一组IV族半导体纳米颗粒，以形成第一致密化膜，其具有第一厚度，其中选择第一激光波长和第一注量以将第一激光器的第一深度分布限制到第一厚度。该方法还包括在第一致密化膜上沉积第二组IV族半导体纳米颗粒。该方法还包括将第二激光器以第二激光波长，第二注量，第二脉冲持续时间，第二数量的重复和第二重复率施加到第二组IV族半导体纳米颗粒以形成第二致密化膜，其具有第二厚度，其中选择第二激光波长和第二注量以将第二激光器的第二深度分布限制到第二厚度。

2. 发明申请

US20080138966A1 METHOD OF FABRICATING A DENSIFIED NANOPARTICLE THIN FILM WITH A SET OF OCCLUDED PORES 审中-公开
标题翻译：用一组封闭的聚四氟乙烯薄膜制造方法
公开(公告)号：US20080138966A1
公开(公告)日：2008-06-12
申请号：US11940056
申请日：2007-11-14
申请人： Elena V. Rogojina , Francesco Lemmi , Maxim Kelman , Xuegeng Li , Pingrong Yu
发明人： Elena V. Rogojina , Francesco Lemmi , Maxim Kelman , Xuegeng Li , Pingrong Yu
IPC分类号： H01L21/208
CPC分类号： H01L31/1804 , H01L21/02422 , H01L21/02425 , H01L21/02488 , H01L21/02491 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/02628 , H01L21/02664 , H01L31/06 , Y02E10/547 , Y02P70/521
摘要： A method of fabricating a densified nanoparticle thin film with a set of occluded pores in a chamber is disclosed. The method includes positioning a substrate in the chamber; and depositing a nanoparticle ink, the nanoparticle ink including a set of Group IV semiconductor particles and a solvent. The method further includes heating the nanoparticle ink to a first temperature between about 30° C. and about 300° C., and for a first time period between about 5 minutes and about 60 minutes, wherein the solvent is substantially removed, and a porous compact with a set of pores is formed. The method also includes heating the porous compact to a second temperature between about 300° C. and about 900° C., and for a second time period of between about 5 minutes and about 15 minutes, and flowing a precursor gas into the chamber at a partial pressure between about 0.1 Torr and about 50 Torr, wherein the precursor gas substantially fills the set of pores, and wherein the densified nanoparticle film with the set of occluded pores is formed.
摘要翻译：公开了一种在腔室中制造具有一组闭塞孔的致密纳米颗粒薄膜的方法。该方法包括将衬底定位在腔室中; 以及沉积纳米颗粒油墨，所述纳米颗粒油墨包括一组IV族半导体颗粒和溶剂。该方法还包括将纳米颗粒油墨加热至约30℃至约300℃之间的第一温度和约5分钟至约60分钟的第一时间，其中基本上除去溶剂，并且将多孔形成一组细孔。该方法还包括将多孔压块加热至约300℃至约900℃之间的第二温度和约5分钟至约15分钟的第二时间段，并将前体气体流入室中在约0.1托和约50托之间的分压，其中前体气体基本上填充该组孔，并且其中形成具有该组闭塞孔的致密纳米颗粒膜。

3. 发明申请

US20080063855A1 SEMICONDUCTOR THIN FILMS FORMED FROM GROUP IV NANOPARTICLES 审中-公开
标题翻译：由IV族纳米粒子形成的半导体薄膜
公开(公告)号：US20080063855A1
公开(公告)日：2008-03-13
申请号：US11851004
申请日：2007-09-06
申请人： Maxim Kelman , Pingrong Yu , Manikandan Jayaraman , Dmitry Poplavskyy , David Jurbergs , Francesco Lemmi , Homer Antoniadis
发明人： Maxim Kelman , Pingrong Yu , Manikandan Jayaraman , Dmitry Poplavskyy , David Jurbergs , Francesco Lemmi , Homer Antoniadis
IPC分类号： B32B3/26 , H01L21/20
CPC分类号： H01L21/02422 , H01L21/02425 , H01L21/02532 , H01L21/02601 , H01L21/02628 , Y10T428/249954 , Y10T428/31678
摘要： Native Group IV semiconductor thin films formed from coating substrates using formulations of Group IV nanoparticles are described. Such native Group IV semiconductor thin films leverage the vast historical knowledge of Group IV semiconductor materials and at the same time exploit the advantages of Group IV semiconductor nanoparticles for producing novel thin films which may be readily integrated into a number of devices.
摘要翻译：描述了使用IV族纳米颗粒的制剂由涂覆底物形成的原生IV族半导体薄膜。这种本土IV族半导体薄膜利用了第IV族半导体材料的广泛的历史知识，同时利用了第IV族半导体纳米颗粒的优点，用于生产可容易地集成到多个器件中的新型薄膜。

4. 发明授权

US07338833B2 Dual dielectric structure for suppressing lateral leakage current in high fill factor arrays 有权
标题翻译：用于抑制高填充因子阵列中的横向漏电流的双电介质结构
公开(公告)号：US07338833B2
公开(公告)日：2008-03-04
申请号：US10067424
申请日：2002-02-07
申请人： Jeng Ping Lu , Ping Mei , Francesco Lemmi , Robert A. Street , James B. Boyce
发明人： Jeng Ping Lu , Ping Mei , Francesco Lemmi , Robert A. Street , James B. Boyce
IPC分类号： H01L21/00
CPC分类号： H01L27/14665 , H01L27/1463
摘要： A structure and method for suppressing lateral leakage current in full fill factor image arrays includes dual dielectric passivation layer. A first passivation layer includes a material that is an insulator, has a low dielectric constant to minimize capacitive coupling between the contacts, and is low stress to prevent cracking. A second passivation layer includes a thin oxide or nitride layer over the first passivation layer.
摘要翻译：用于抑制全填充因子图像阵列中的横向漏电流的结构和方法包括双电介质钝化层。第一钝化层包括作为绝缘体的材料，具有低介电常数以最小化触点之间的电容耦合，并且是低应力以防止开裂。第二钝化层包括在第一钝化层上的薄氧化物或氮化物层。

5. 发明授权

US06794725B2 Amorphous silicon sensor with micro-spring interconnects for achieving high uniformity in integrated light-emitting sources 有权
标题翻译：具有微弹簧互连的非晶硅传感器，用于实现集成发光源的高均匀性
公开(公告)号：US06794725B2
公开(公告)日：2004-09-21
申请号：US09469122
申请日：1999-12-21
申请人： Francesco Lemmi , Christopher L. Chua , Ping Mei , JengPing Lu , David K. Fork , Harry J. McIntyre
发明人： Francesco Lemmi , Christopher L. Chua , Ping Mei , JengPing Lu , David K. Fork , Harry J. McIntyre
IPC分类号： H01L3100
CPC分类号： H01L31/1055 , B41J2/45 , H01L25/0753 , H01L31/1016 , H01L2924/0002 , H01L2924/3011 , H01S5/02 , H01S5/0262 , H01S5/4025 , H01L2924/00
摘要： A hybrid structure or device is provided wherein carried on a single substrate is at least one micro-spring interconnect having an elastic material that is initially fixed to a surface of the substrate, an anchor portion which is fixed to the substrate surface and a free portion. The spring contact is self-assembling in that as the free portion is released it moves out of the plane of the substrate. Also integrated on the substrate is a sensor having an active layer and contacts. The substrate and sensor may be formed of materials which are somewhat partially transparent to light at certain infrared wavelengths. The integrated sensor/spring contact configuration may be used in an imaging system to sense output from a light source which is used for image formation. The light source may be a laser array, LED array or other appropriate light source. The sensor is appropriately sized to sense all or some part of light from the light source. The sensor may also be sufficiently transparent so that light is not blocked from its emission path, with a contrast ratio such that it only absorbs a small fraction of light passing therethrough. An additional characteristic is that the manufacturing process is compatible with the manufacturing process for the micro-spring interconnects. Data from the sensor is used as light source correction information. This information is provided to a calibration configuration which allows for calibration of high-speed systems.
摘要翻译：提供了一种混合结构或装置，其中承载在单个基板上的是具有弹性材料的至少一个微弹簧互连，弹性材料最初固定到基板的表面，固定到基板表面的锚定部分和自由部分。弹簧接触件是自组装的，因为随着自由部分的释放，它移出基板的平面。还集成在基板上的是具有有源层和触点的传感器。衬底和传感器可以由对某些红外波长的光稍微部分透明的材料形成。集成的传感器/弹簧接触配置可用于成像系统中以感测用于图像形成的光源的输出。光源可以是激光阵列，LED阵列或其他合适的光源。传感器的尺寸适当，可以感测来自光源的全部或部分光线。传感器也可以是足够透明的，使得光不被其发射路径阻挡，对比度使得其仅吸收通过其中的一小部分光。另外的特征是制造工艺与微弹簧互连的制造工艺兼容。来自传感器的数据用作光源校正信息。该信息被提供给允许校准高速系统的校准配置。

6. 发明授权

US07776724B2 Methods of filling a set of interstitial spaces of a nanoparticle thin film with a dielectric material 有权
标题翻译：用介电材料填充纳米颗粒薄膜的一组间隙空间的方法
公开(公告)号：US07776724B2
公开(公告)日：2010-08-17
申请号：US11950030
申请日：2007-12-04
申请人： Francesco Lemmi , Elena V. Rogojina , Pingrong Yu , David Jurbergs , Homer Antoniadis , Maxim Kelman
发明人： Francesco Lemmi , Elena V. Rogojina , Pingrong Yu , David Jurbergs , Homer Antoniadis , Maxim Kelman
IPC分类号： H01L21/208 , C30B25/04
CPC分类号： H01L21/02601 , H01L21/0237 , H01L21/02524 , H01L21/02529 , H01L21/02532 , H01L21/02628 , H01L21/02667 , Y10S977/892 , Y10S977/893
摘要： A method of forming a densified nanoparticle thin film is disclosed. The method includes positioning a substrate in a first chamber; and depositing a nanoparticle ink, the nanoparticle ink including a set of Group IV semiconductor particles and a solvent. The method also includes heating the nanoparticle ink to a first temperature between about 30° C. and about 300° C., and for a first time period between about 1 minute and about 60 minutes, wherein the solvent is substantially removed, and a porous compact is formed; and positioning the substrate in a second chamber, the second chamber having a pressure of between about 1×10−7 Torr and about 1×10−4 Torr. The method further includes depositing on the porous compact a dielectric material; wherein the densified nanoparticle thin film is formed.
摘要翻译：公开了一种形成致密化纳米颗粒薄膜的方法。该方法包括将基板定位在第一室中; 以及沉积纳米颗粒油墨，所述纳米颗粒油墨包括一组IV族半导体颗粒和溶剂。该方法还包括将纳米颗粒油墨加热至约30℃至约300℃之间的第一温度和约1分钟至约60分钟的第一时间，其中基本上除去溶剂，并且将多孔形成紧凑型; 以及将所述基板定位在第二室中，所述第二室具有介于约1×10 -7乇至约1×10 -4乇之间的压力。该方法还包括在多孔压块上沉积电介质材料; 其中形成致密的纳米颗粒薄膜。

7. 发明申请

US20090239330A1 METHODS FOR FORMING COMPOSITE NANOPARTICLE-METAL METALLIZATION CONTACTS ON A SUBSTRATE 失效
标题翻译：在基材上形成复合纳米金属金属化接触的方法
公开(公告)号：US20090239330A1
公开(公告)日：2009-09-24
申请号：US12050635
申请日：2008-03-18
申请人： Karel Vanheusden , Francesco Lemmi , Dmitry Poplavskyy , Mason Terry , Malcolm Abbott
发明人： Karel Vanheusden , Francesco Lemmi , Dmitry Poplavskyy , Mason Terry , Malcolm Abbott
IPC分类号： H01L21/00
CPC分类号： H01L31/022425 , Y02E10/50 , Y10S977/773 , Y10S977/775 , Y10S977/777 , Y10S977/778 , Y10S977/939
摘要： A method for forming a contact to a substrate is disclosed. The method includes providing a substrate, the substrate being doped with a first dopant; and diffusing a second dopant into at least a first side of the substrate to form a second dopant region, the first side further including a first side surface area. The method also includes forming a dielectric layer on the first side of the substrate. The method further includes forming a set of composite layer regions on the dielectric layer, wherein each composite layer region of the set of composite layer regions further includes a set of Group IV semiconductor nanoparticles and a set of metal particles. The method also includes heating the set of composite layer regions to a first temperature, wherein at least some composite layer regions of the set of composite layer regions etch through the dielectric layer and form a set of contacts with the second dopant region.
摘要翻译：公开了一种用于形成与基板的接触的方法。所述方法包括提供衬底，所述衬底被掺杂有第一掺杂剂; 并且将第二掺杂剂扩散到所述衬底的至少第一侧中以形成第二掺杂剂区域，所述第一侧还包括第一侧表面区域。该方法还包括在基板的第一侧上形成介电层。该方法还包括在电介质层上形成一组复合层区域，其中该组复合层区域的每个复合层区域还包括一组IV族半导体纳米颗粒和一组金属颗粒。该方法还包括将该组复合层区域加热到第一温度，其中该组复合层区域中的至少一些复合层区域蚀刻通过介电层并与第二掺杂剂区域形成一组接触。

8. 发明申请

US20080182390A1 METHODS OF FILLING A SET OF INTERSTITIAL SPACES OF A NANOPARTICLE THIN FILM WITH A DIELECTRIC MATERIAL 有权
标题翻译：用介电材料填充纳米薄膜的一组间隔空间的方法
公开(公告)号：US20080182390A1
公开(公告)日：2008-07-31
申请号：US11950030
申请日：2007-12-04
申请人： Francesco Lemmi , Elena V. Rogojina , Pingrong Yu , David Jurbergs , Homer Antoniadis , Maxim Kelman
发明人： Francesco Lemmi , Elena V. Rogojina , Pingrong Yu , David Jurbergs , Homer Antoniadis , Maxim Kelman
IPC分类号： H01L21/208
CPC分类号： H01L21/02601 , H01L21/0237 , H01L21/02524 , H01L21/02529 , H01L21/02532 , H01L21/02628 , H01L21/02667 , Y10S977/892 , Y10S977/893
摘要： A method of forming a densified nanoparticle thin film is disclosed. The method includes positioning a substrate in a first chamber; and depositing a nanoparticle ink, the nanoparticle ink including a set of Group IV semiconductor particles and a solvent. The method also includes heating the nanoparticle ink to a first temperature between about 30° C. and about 300° C., and for a first time period between about 1 minute and about 60 minutes, wherein the solvent is substantially removed, and a porous compact is formed; and positioning the substrate in a second chamber, the second chamber having a pressure of between about 1×10−7 Torr and about 1×10−4 Torr. The method further includes depositing on the porous compact a dielectric material; wherein the densified nanoparticle thin film is formed.
摘要翻译：公开了一种形成致密化纳米颗粒薄膜的方法。该方法包括将基板定位在第一室中; 以及沉积纳米颗粒油墨，所述纳米颗粒油墨包括一组IV族半导体颗粒和溶剂。该方法还包括将纳米颗粒油墨加热至约30℃至约300℃之间的第一温度和约1分钟至约60分钟的第一时间，其中基本上除去溶剂，并且将多孔形成紧凑型; 以及将所述衬底定位在第二腔室中，所述第二腔室具有在约1×10 -7 Torr至约1×10 -4 Torr之间的压力。该方法还包括在多孔压块上沉积电介质材料; 其中形成致密的纳米颗粒薄膜。

9. 发明申请

US20080146005A1 METHODS FOR CREATING A DENSIFIED GROUP IV SEMICONDUCTOR NANOPARTICLE THIN FILM 失效
标题翻译：用于形成透明IV族半导体纳米薄膜的方法
公开(公告)号：US20080146005A1
公开(公告)日：2008-06-19
申请号：US11950024
申请日：2007-12-04
申请人： Francesco Lemmi , Elena V. Rogojina , Pingrong Yu , David Jurbergs , Homer Antoniadis , Maxim Kelman
发明人： Francesco Lemmi , Elena V. Rogojina , Pingrong Yu , David Jurbergs , Homer Antoniadis , Maxim Kelman
IPC分类号： H01L21/36
CPC分类号： H01L21/02601 , H01L21/0237 , H01L21/02524 , H01L21/02529 , H01L21/02532 , H01L21/02628 , H01L21/02667 , Y10S977/892 , Y10S977/893
摘要： A method of forming a densified nanoparticle thin film in a chamber is disclosed. The method includes positioning a substrate in the chamber; and depositing a nanoparticle ink, the nanoparticle ink including a set of Group IV semiconductor particles and a solvent. The method also includes heating the nanoparticle ink to a first temperature between about 30° C. and about 300° C., and for a first time period between about 1 minute and about 60 minutes, wherein the solvent is substantially removed, and a porous compact is formed. The method further includes exposing the porous compact to an HF vapor for a second time period of between about 2 minutes and about 20 minutes, and heating the porous compact for a second temperature of between about 25° C. and about 60° C.; and heating the porous compact to a third temperature between about 100° C. and about 1000° C., and for a third time period of between about 5 minutes and about 10 hours; wherein the densified nanoparticle thin film is formed.
摘要翻译：公开了一种在腔室中形成致密的纳米颗粒薄膜的方法。该方法包括将衬底定位在腔室中; 以及沉积纳米颗粒油墨，所述纳米颗粒油墨包括一组IV族半导体颗粒和溶剂。该方法还包括将纳米颗粒油墨加热至约30℃至约300℃之间的第一温度和约1分钟至约60分钟的第一时间，其中基本上除去溶剂，并且将多孔形成紧凑。该方法还包括将多孔压块暴露于HF蒸气中约2分钟至约20分钟的第二时间段，并将多孔压块加热至约25℃至约60℃的第二温度; 并将所述多孔压块加热至约100℃至约1000℃之间的第三温度和约5分钟至约10小时的第三时间; 其中形成致密的纳米颗粒薄膜。

10. 发明申请

US20060257637A1 Nanowire dispersion compositions and uses thereof 有权
标题翻译：纳米线分散组合物及其用途
公开(公告)号：US20060257637A1
公开(公告)日：2006-11-16
申请号：US11399307
申请日：2006-04-06
申请人： Cheri Pereira , Francesco Lemmi , David Stumbo
发明人： Cheri Pereira , Francesco Lemmi , David Stumbo
IPC分类号： A01K1/015 , E01F9/04 , D06N7/00
CPC分类号： C30B33/005 , B82Y10/00 , B82Y20/00 , B82Y30/00 , C30B29/06 , C30B29/08 , C30B29/40 , C30B29/48 , C30B29/602 , H01L31/022466 , Y10T428/24372 , Y10T428/24405 , Y10T428/249921
摘要： Nanowire dispersion compositions (and uses thereof) are disclosed comprising a plurality of inorganic nanowires suspended in an aqueous or non-aqueous solution comprising at least one low molecular weight and/or low HLB (Hydrophile-Lipophile Balance) value dispersant. Methods of further improving the dispersability of a plurality of inorganic nanowires in an aqueous or non-aqueous solution comprise, for example, oxidizing the surface of the nanowires prior to dispersing the nanowires in the aqueous or non-aqueous solution.
摘要翻译：公开了纳米线分散体组合物（及其用途），其包含悬浮在包含至少一种低分子量和/或低HLB（亲水亲油平衡值）分散剂的水性或非水溶液中的多种无机纳米线。在水性或非水溶液中分散纳米线之前，进一步提高多种无机纳米线在水溶液或非水溶液中的分散性的方法包括例如氧化纳米线的表面。

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