专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20050203399A1 Image guided high intensity focused ultrasound device for therapy in obstetrics and gynecology 有权
标题翻译：图像引导高强度聚焦超声装置治疗妇产科
公开(公告)号：US20050203399A1
公开(公告)日：2005-09-15
申请号：US10977339
申请日：2004-10-29
申请人： Shahram Vaezy , Arthur Chan , Victor Fujimoto , Donald Moore , Roy Martin
发明人： Shahram Vaezy , Arthur Chan , Victor Fujimoto , Donald Moore , Roy Martin
IPC分类号： A61B8/08 , A61B17/42 , A61B19/00 , A61N7/02 , A61B8/00 , A61B8/12 , A61B8/14
CPC分类号： A61N7/00 , A61B8/08 , A61B8/0833 , A61B8/0841 , A61B8/12 , A61B8/4209 , A61B8/4218 , A61B8/462 , A61B2017/2253 , A61B2017/4216 , A61B2090/378 , A61N7/02
摘要： A frame ensures that the alignment between a high intensity focused ultrasound (HIFU) transducer designed for vaginal use and a commercially available ultrasound image probe is maintained, so that the HIFU focus remains in the image plane during HIFU therapy. A water-filled membrane placed between the HIFU transducer and the treatment site provides acoustic coupling. The coupling is evaluated to determine whether any air bubbles exist at the coupling interface, which might degrade the therapy provided by the HIFU transducer. HIFU lesions on tissue appear as hyperechoic spots on the ultrasound image in real time during application of HIFU therapy. Ergonomic testing in humans has demonstrated clear visualization of the HIFU transducer relative to the uterus and showed the potential for the HIFU transducer to treat fibroids from the cervix to the fundus through the width of the uterus.
摘要翻译：框架确保维持设计用于阴道使用的高强度聚焦超声（HIFU）换能器和商业上可获得的超声图像探针之间的对准，使得HIFU治疗期间HIFU焦点保留在图像平面中。放置在HIFU换能器和处理部位之间的充水膜提供声耦合。评估耦合以确定耦合界面是否存在任何气泡，这可能降低由HIFU传感器提供的治疗。 HIFU治疗期间组织上的HIFU损伤实时显示为超声图像上的高回声点。人体工程学测试已经证明了HIFU传感器相对于子宫的清晰可视化，并显示HIFU传感器通过子宫宽度将子宫肌瘤从子宫颈治疗到眼底的潜力。

2. 发明申请

US20080109391A1 Classifying content based on mood 审中-公开
标题翻译：基于情绪分类内容
公开(公告)号：US20080109391A1
公开(公告)日：2008-05-08
申请号：US11594714
申请日：2006-11-07
申请人： Arthur Chan
发明人： Arthur Chan
IPC分类号： G06N5/00
CPC分类号： G06N5/00
摘要： In one embodiment, content and events are received. The content is analyzed based on to determine a mood score based on events. The mood score is used to classify the content and event with a mood. The mood classification may then be used to affect actions being performed. For example, the mood may affect ad matching to the content. In one example, depending on the mood that is calculated, different ads may be matched to different portions of the content. Accordingly, more effective ads may be served with the content when the mood classification is taken into account.
摘要翻译：在一个实施例中，接收内容和事件。基于事件来确定心情得分来分析内容。心情分数用于分析心情的内容和事件。然后可以使用情绪分类来影响正在执行的动作。例如，心情可能会影响与内容的广告匹配。在一个示例中，根据所计算的心情，不同的广告可能与内容的不同部分相匹配。因此，当考虑情绪分类时，内容可以提供更有效的广告。

3. 发明申请

US20080051656A1 METHOD FOR USING HIGH INTENSITY FOCUSED ULTRASOUND 有权
标题翻译：使用高强度聚焦超声的方法
公开(公告)号：US20080051656A1
公开(公告)日：2008-02-28
申请号：US11928667
申请日：2007-10-30
申请人： Shahram Vaezy , Arthur Chan , Victor Fujimoto , Donald Moore , Roy Martin
发明人： Shahram Vaezy , Arthur Chan , Victor Fujimoto , Donald Moore , Roy Martin
IPC分类号： A61N7/00
CPC分类号： A61N7/00 , A61B8/08 , A61B8/0833 , A61B8/0841 , A61B8/12 , A61B8/4209 , A61B8/4218 , A61B8/462 , A61B2017/2253 , A61B2017/4216 , A61B2090/378 , A61N7/02
摘要： A plurality of concepts related to HIFU therapy are disclosed, including a technique to spatially track and display the relative positions of a HIFU focal point and an imaging plane from an ultrasound imager, so that a clinician can ensure that the HIFU focus remains in the image plane during HIFU therapy, thereby facilitating image guided HIFU therapy. Also disclosed are a plurality of transvaginal probes that include a HIFU transducer optimized for the treatment of uterine fibroids. In one embodiment, the probe includes a piezoceramic crystal bonded to an aluminum lens, to achieve a HIFU transducer having a focal length of about 4 cm. In another embodiment, the probe includes a generally spoon-shaped transducer including a plurality of individual emitter elements. Still another concept disclosed herein is a method for evaluating a quality of a coupling between a liquid-filled volume encompassing a HIFU transducer and a tissue interface.
摘要翻译：公开了与HIFU治疗相关的多个概念，包括从超声成像器空间跟踪和显示HIFU焦点和成像平面的相对位置的技术，使得临床医生可以确保HIFU焦点保留在图像中在HIFU治疗期间平面，从而促进图像引导的HIFU治疗。还公开了多个经阴道探针，其包括优化用于治疗子宫肌瘤的HIFU换能器。在一个实施例中，探针包括结合到铝透镜的压电陶瓷晶体，以实现焦距为约4cm的HIFU换能器。在另一个实施例中，探针包括一般包括多个单个发射器元件的匙形换能器。本文公开的另一概念是用于评估包含HIFU换能器的液体填充体与组织界面之间的耦合质量的方法。

4. 发明授权

US6096662A NH.sub.3 /N.sub.2 plasma treatment to enhance the adhesion of silicon nitride to thermal oxide 失效
标题翻译： NH3 / N2等离子体处理，以增强氮化硅与热氧化物的粘附性
公开(公告)号：US6096662A
公开(公告)日：2000-08-01
申请号：US824748
申请日：1997-03-26
申请人： Minh Van Ngo , Darin Arthur Chan
发明人： Minh Van Ngo , Darin Arthur Chan
IPC分类号： H01L21/762 , H01L21/76
CPC分类号： H01L21/76224
摘要： A method of manufacturing a semiconductor device with improved adhesion between the local interconnect etch stop layer and the thermal oxide in an isolation region. The thermal oxide is treated with an NH.sub.3 /N.sub.2 plasma. The local interconnect etch stop layer is either silicon nitride or silicon oxynitride. A layer of a dielectric material such as PECVD SiO.sub.2 is formed on the local interconnect etch stop layer.
摘要翻译：一种制造半导体器件的方法，该半导体器件具有改善局部互连蚀刻停止层和隔离区域中的热氧化物之间的粘合性。热氧化物用NH 3 / N 2等离子体处理。局部互连蚀刻停止层是氮化硅或氮氧化硅。在局部互连蚀刻停止层上形成诸如PECVD SiO 2的电介质材料层。

5. 发明授权

US6166428A Formation of a barrier layer for tungsten damascene interconnects by nitrogen implantation of amorphous silicon or polysilicon 失效
标题翻译：通过非晶硅或多晶硅的氮注入形成钨镶嵌互连的阻挡层
公开(公告)号：US6166428A
公开(公告)日：2000-12-26
申请号：US917153
申请日：1997-08-25
申请人： Sunil D. Mehta , William G. En , Darin Arthur Chan , Raymond Takling Lee
发明人： Sunil D. Mehta , William G. En , Darin Arthur Chan , Raymond Takling Lee
IPC分类号： H01L21/28 , H01L21/768 , H01L23/26 , H01L23/58
CPC分类号： H01L21/28273 , H01L21/76825 , H01L21/76832 , H01L21/76834 , H01L21/76895 , H01L21/76897 , H01L23/26 , H01L2924/0002 , H01L2924/13091 , H01L2924/00
摘要： A semiconductor device having at least a first and second type of devices formed in the substrate of the semiconductor device and having a hydrogen free barrier layer formed by implanting nitrogen into a layer of amorphous silicon or polysilicon formed on the surface of the semiconductor device. A hydrogen getter layer is formed on the semiconductor device under the barrier layer. The hydrogen getter layer is removed from portions of the semiconductor device on which salicide layers are to be formed.
摘要翻译：一种半导体器件，其具有形成在半导体器件的衬底中的至少第一和第二类型的器件，并具有通过将氮注入形成在半导体器件的表面上的非晶硅层或多晶硅层而形成的无氢阻挡层。在阻挡层下的半导体器件上形成吸氢剂层。从半导体器件的要形成硅化物层的部分去除吸氢剂层。

6. 发明申请

US20070147359A1 Method and apparatus for configuring at least one port in a switch to be an upstream port or a downstream port 有权
标题翻译：用于将交换机中的至少一个端口配置为上游端口或下游端口的方法和装置
公开(公告)号：US20070147359A1
公开(公告)日：2007-06-28
申请号：US11316802
申请日：2005-12-22
申请人： Brad Congdon , Arthur Chan
发明人： Brad Congdon , Arthur Chan
IPC分类号： H04L12/50 , H04Q11/00
CPC分类号： H04L49/30 , H04L49/65
摘要： A method and apparatus are described herein for configuring at least one port in a switch to be an upstream port or a downstream port based, at least in part, on a control signal. If a component includes both a switch and an endpoint, the method and apparatus support configuration of the endpoint to either couple to an upstream port or to a downstream port. In one embodiment, this method and apparatus are used with PCI Express interconnects.
摘要翻译：本文描述了一种方法和装置，用于至少部分地基于控制信号将交换机中的至少一个端口配置为上游端口或下游端口。如果组件包括交换机和端点，则该方法和设备支持端点的配置以耦合到上游端口或下游端口。在一个实施例中，该方法和装置与PCI Express互连一起使用。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式