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1. 发明授权

US09222197B2 Shield member and apparatus for growing single crystal equipped with the same 有权
标题翻译：用于生长配备相同的单晶的屏蔽构件和装置
公开(公告)号：US09222197B2
公开(公告)日：2015-12-29
申请号：US13580877
申请日：2011-01-12
申请人： Akihiro Matsuse
发明人： Akihiro Matsuse
IPC分类号： C30B23/06 , C30B29/36 , C30B23/00
CPC分类号： C30B23/06 , C30B23/002 , C30B23/005 , C30B29/36 , Y10T117/10
摘要： Provided is a shield member and an apparatus for growing a single crystal equipped with the shield member. Such a shield member includes: a vessel for growing the single crystal; a raw material storage part positioned at a lower portion of the vessel for growing the single crystal; a substrate supporting part, positioned above the raw material storage part to support the substrate; and a heating apparatus positioned at a an outer periphery of the vessel for growing the single crystal, thereby sublimating the raw material from the raw material storage part to grow the single crystal of the raw material onto the substrate, in which a plurality of permeation holes through which the raw material gas passes is formed. The shield member is configured such that the heat capacity thereof increases from the center to the outer periphery.
摘要翻译：提供一种屏蔽部件和用于生长装备有屏蔽部件的单晶的设备。这种屏蔽构件包括：用于生长单晶的容器; 位于容器下部的原料储存部，用于生长单晶; 基板支撑部，位于原料收纳部的上方，支撑基板; 以及位于容器的外周的加热装置，用于使单晶生长，从而使原料储存部分的原料升华，将原料的单晶生长到基板上，其中多个渗透孔通过该原料气体通过。屏蔽构件被构造成使得其热容量从中心向外周增加。

2. 发明授权

US09035321B2 Semiconductor device and manufacturing method of semiconductor device 有权
标题翻译：半导体器件及半导体器件的制造方法
公开(公告)号：US09035321B2
公开(公告)日：2015-05-19
申请号：US13059759
申请日：2009-08-20
申请人： Akihiro Matsuse , Kotaro Yano
发明人： Akihiro Matsuse , Kotaro Yano
IPC分类号： H01L29/24 , H01L21/28 , H01L21/04 , H01L29/45 , H01L29/47 , H01L29/66 , H01L29/872 , H01L29/06 , H01L29/16
CPC分类号： H01L21/0485 , H01L21/0495 , H01L29/0619 , H01L29/1608 , H01L29/45 , H01L29/47 , H01L29/6606 , H01L29/872
摘要： There is provided a semiconductor device including an ohmic junction layer which is excellent in surface flatness and uniformity of composition in an interface with a semiconductor substrate and thus can give a sufficiently high adhesiveness with a Schottky junction layer. Such a semiconductor device includes an n type SiC semiconductor substrate (1), a cathode electrode (5) that comes into ohmic contact with a main surface (1b) of one side of the SiC semiconductor substrate (1), a first semiconductor region (6a) that is made of p type SiC formed in a main surface (1a) of the other side of the SiC semiconductor substrate (1), a second semiconductor region (6b) that is made of an n type SiC formed in the main surface (1a) of the other side, an ohmic junction layer (7) that comes into ohmic contact with the first semiconductor region (1a), and a Schottky junction layer (8) that comes into Schottky contact with the second semiconductor region (6b), wherein a root mean square roughness for a surface of the ohmic junction layer (7) is 20 nm or less.
摘要翻译：提供了一种包括欧姆接合层的半导体器件，其在与半导体衬底的界面中的表面平坦性和组成的均匀性方面优异，因此可以与肖特基结层具有足够高的粘附性。这种半导体器件包括n型SiC半导体衬底（1），与SiC半导体衬底（1）的一侧的主表面（1b）欧姆接触的阴极电极（5），第一半导体区域 6a），其形成在SiC半导体衬底（1）的另一侧的主表面（1a）中的由p型SiC制成的第二半导体区域（6b），其形成在主表面中的n型SiC （1a），与第一半导体区域（1a）欧姆接触的欧姆结层（7）和与第二半导体区域（6b）进行肖特基接触的肖特基结层（8），其中所述欧姆接合层（7）的表面的均方根粗糙度为20nm以下。

3. 发明申请

US20120318198A1 SHIELD MEMBER AND APPARATUS FOR GROWING SINGLE CRYSTAL EQUIPPED WITH THE SAME 有权
标题翻译：用于生长装备的单晶的屏蔽部件和装置
公开(公告)号：US20120318198A1
公开(公告)日：2012-12-20
申请号：US13580877
申请日：2011-01-12
申请人： Akihiro Matsuse
发明人： Akihiro Matsuse
IPC分类号： C30B23/06 , B05C21/00
CPC分类号： C30B23/06 , C30B23/002 , C30B23/005 , C30B29/36 , Y10T117/10
摘要： Provided is a shield member and an apparatus for growing a single crystal equipped with the shield member, which has significant effect of unifying the surface temperature in the radical direction of the seed crystal and growing crystal, and enables to produce single crystal with high quality and having a large size. Such a shield member includes: a vessel for growing a crystal; a raw material storage part positioned at a lower portion of the vessel for growing a crystal; a substrate supporting part, positioned above the raw material storage part so as to be opposed to the raw material storage part to support the substrate; and a heating apparatus positioned at outer periphery of the vessel for growing a crystal, thereby sublimating the raw material from the raw material storage part to grow single crystal of the raw material onto the substrate, in which a plurality of permeation holes through which the raw material gas passes is formed, and the shield member is configured such that the heat capacity thereof increases as displacing from the center to the outer periphery.
摘要翻译：本发明提供了一种屏蔽部件和用于生长具有屏蔽部件的单晶体的装置，其具有使晶种的自由基方向的表面温度均匀化并且晶体生长的效果显着的效果，能够以高质量制造单晶，具有大尺寸。这种屏蔽构件包括：用于生长晶体的容器; 位于容器下部的原料储存部分，用于生长晶体; 基板支撑部，其位于所述原料收纳部的上方，与所述原料收纳部对置地支撑所述基板; 以及位于容器的外周的加热装置，用于生长晶体，从而使原料从原料储存部分升华，将原料的单晶生长到基材上，其中多个渗透孔通过该原料形成材料气体通道，并且屏蔽部件构造成使得其热容量随着从中心向外周移动而增加。

4. 发明申请

US20110147767A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的半导体器件和制造方法
公开(公告)号：US20110147767A1
公开(公告)日：2011-06-23
申请号：US13059759
申请日：2009-08-20
申请人： Akihiro Matsuse , Kotaro Yano
发明人： Akihiro Matsuse , Kotaro Yano
IPC分类号： H01L29/24 , H01L21/28
CPC分类号： H01L21/0485 , H01L21/0495 , H01L29/0619 , H01L29/1608 , H01L29/45 , H01L29/47 , H01L29/6606 , H01L29/872
摘要： There is provided a semiconductor device including an ohmic junction layer which is excellent in surface flatness and uniformity of composition in an interface with a semiconductor substrate and thus can give a sufficiently high adhesiveness with a Schottky junction layer. Such a semiconductor device includes an n type SiC semiconductor substrate (1), a cathode electrode (5) that comes into ohmic contact with a main surface (1b) of one side of the SiC semiconductor substrate (1), a first semiconductor region (6a) that is made of p type SiC formed in a main surface (1a) of the other side of the SiC semiconductor substrate (1), a second semiconductor region (6b) that is made of an n type SiC formed in the main surface (1a) of the other side, an ohmic junction layer (7) that comes into ohmic contact with the first semiconductor region (1a), and a Schottky junction layer (8) that comes into Schottky contact with the second semiconductor region (6b), wherein a root mean square roughness for a surface of the ohmic junction layer (7) is 20 nm or less.
摘要翻译：提供了一种包括欧姆接合层的半导体器件，其在与半导体衬底的界面中的表面平坦性和组成的均匀性方面优异，因此可以与肖特基结层具有足够高的粘附性。这种半导体器件包括n型SiC半导体衬底（1），与SiC半导体衬底（1）的一侧的主表面（1b）欧姆接触的阴极电极（5），第一半导体区域 6a），其形成在SiC半导体衬底（1）的另一侧的主表面（1a）中的由p型SiC制成的第二半导体区域（6b），其形成在主表面中的n型SiC （1a），与第一半导体区域（1a）欧姆接触的欧姆结层（7）和与第二半导体区域（6b）进行肖特基接触的肖特基结层（8），其中所述欧姆接合层（7）的表面的均方根粗糙度为20nm以下。

5. 发明授权

US08866186B2 Group III nitride semiconductor light-emitting device 有权
标题翻译： III族氮化物半导体发光器件
公开(公告)号：US08866186B2
公开(公告)日：2014-10-21
申请号：US12067350
申请日：2006-09-20
申请人： Gaku Oriji , Koji Kamei , Hisayuki Miki , Akihiro Matsuse
发明人： Gaku Oriji , Koji Kamei , Hisayuki Miki , Akihiro Matsuse
IPC分类号： H01L33/00 , H01L21/78 , H01L33/20 , H01L33/38
CPC分类号： H01L33/20 , H01L27/153 , H01L33/0075 , H01L33/025 , H01L33/24 , H01L33/38
摘要： The present invention aims to enhance the light extraction efficiency of the Group III nitride semiconductor light-emitting device.The inventive Group III nitride semiconductor light-emitting device comprises a substrate; and a Group III nitride semiconductor layer including a light-emitting layer, stacked on the substrate, wherein the side face of the Group III nitride semiconductor layer is tilted with respect to the normal line of the major surface of the substrate.
摘要翻译：本发明旨在提高III族氮化物半导体发光器件的光提取效率。本发明的III族氮化物半导体发光器件包括衬底; 以及层叠在所述基板上的包含发光层的III族氮化物半导体层，其中，所述III族氮化物半导体层的侧面相对于所述基板的主面的法线倾斜。

6. 发明申请

US20100181595A1 GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译： III类氮化物半导体发光器件
公开(公告)号：US20100181595A1
公开(公告)日：2010-07-22
申请号：US12067350
申请日：2006-09-20
申请人： Gaku Oriji , Koji Kamei , Hisayuki Miki , Akihiro Matsuse
发明人： Gaku Oriji , Koji Kamei , Hisayuki Miki , Akihiro Matsuse
IPC分类号： H01L33/00 , H01L21/78
CPC分类号： H01L33/20 , H01L27/153 , H01L33/0075 , H01L33/025 , H01L33/24 , H01L33/38
摘要： The present invention aims to enhance the light extraction efficiency of the Group III nitride semiconductor light-emitting device.The inventive Group III nitride semiconductor light-emitting device comprises a substrate; and a Group III nitride semiconductor layer including a light-emitting layer, stacked on the substrate, wherein the side face of the Group III nitride semiconductor layer is tilted with respect to the normal line of the major surface of the substrate.
摘要翻译：本发明旨在提高III族氮化物半导体发光器件的光提取效率。本发明的III族氮化物半导体发光器件包括衬底; 以及层叠在所述基板上的包含发光层的III族氮化物半导体层，其中，所述III族氮化物半导体层的侧面相对于所述基板的主面的法线倾斜。

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