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    • 2. 发明公开
    • 신규한 안티모니 카드뮴 옥시클로라이드 화합물 및 그 제조방법
    • 新型抗氧化剂氧化物材料,SB2CDO3.125CL1.75及其合成
    • KR1020110086291A
    • 2011-07-28
    • KR1020100005943
    • 2010-01-22
    • 중앙대학교 산학협력단
    • 옥강민조빛나
    • C01G30/02C01G11/00C01B11/06
    • PURPOSE: An antimony cadmium oxychloride compound and a method for preparing the same are provided to obtain the compound containing cadmium antimony oxide rod, cadmium chloride double chain, and an isolated chloride ion in one dimensional structure. CONSTITUTION: An antimony cadmium oxychloride compound is formed into one dimensional structure containing Sb(3+)-Cd(2+)-oxide rod, Cd(2+)-chloride double chain, and an isolated chloride ion. The Sb(3+)-Cd(2+)-oxide rod is composed of asymmetric SbO_4, SbO_6, and CdO_7 polyhedron connected by oxygen atoms. The Cd(2+)-chloride double chain is composed of CdCl_6 octahedron. The isolated chloride ion exists in a three dimensional environment surrounded by eight Sb ions. The Sb ions exist in an asymmetric coordination environment.
    • 目的:提供一种氯化锑化合物及其制备方法,以获得一维结构中含有镉锑氧化物棒,氯化镉双链和分离的氯离子的化合物。 构成:将锑氯化锑化合物形成为含有Sb(3 +) - Cd(2 +) - 氧化物棒,Cd(2+) - 氯双链以及分离的氯离子的一维结构。 Sb(3 +) - Cd(2 +) - 氧化物棒由氧原子连接的不对称SbO_4,SbO_6和CdO_7多面体构成。 Cd(2 +) - 氯化双链由CdCl_6八面体组成。 分离的氯离子存在于由八个Sb离子包围的三维环境中。 Sb离子存在于非对称配位环境中。
    • 4. 发明授权
    • 망간이 도핑된 카드뮴셀레나이드 양자점의 제조방법
    • 망간이도핑된카드뮴셀레나이드양자점의제조방망
    • KR100876258B1
    • 2008-12-26
    • KR1020070007701
    • 2007-01-25
    • 고려대학교 산학협력단
    • 성윤모이정철곽우철이명기
    • B82B3/00H01L33/00C01G11/00C01B19/04
    • A fabrication method of cadmium selenide quantum dots is provided to obtain cadmium selenide doped with manganese suitable for spintronics by inducing diluted magnetic property by making the structure of the cadmium selenide into face centered cubic zinc blended structure. A fabrication method of cadmium selenide quantum dots comprises steps of: (a) preparing a primary solution by dissolving cadmium source and manganese source in paraffin oil solvent with oleic acid surfactant and preparing a secondary solution by dissolving selenium metal in paraffin oil(S110); (b) forming cadmium selenide quantum dots doped with manganese by adding the primary solution to the secondary solution and vice versa(S120); (c) growing the cadmium selenide quantum dots doped with manganese in order to have a certain wavelength of emission region and a band gap(S130); and (d) washing the grown cadmium selenide quantum dots doped with manganese. The volume ratio of the paraffin oil and the oleic acid for the primary solution is 1:10-100:1. The molar ratio of cadmium ion to manganese ion in the primary solution is 100:4 to 100:40. The molar concentration of manganese ion in the primary solution is 10-30mM, and the molar concentration of selenium ion in the secondary solution is 20-60mM. For the preparation of the primary solution, the temperature of 160-180deg.C is maintained until the organic solvents other than paraffin oil and the oleic acid in the solution are sufficiently released. For the preparation of the secondary solution, the temperature is set to 200-240deg.C. Further, the cadmium source is one of CdO and Cd acetate, and the manganese source is Mn acetate.
    • 本发明提供一种硒化镉量子点的制备方法,通过将硒化镉的结构制成面心立方锌掺杂结构,诱导稀磁性,从而获得掺杂锰的硒化镉,适用于自旋电子学。 一种硒化镉量子点的制备方法,包括以下步骤:(a)通过将镉源和锰源与油酸表面活性剂溶解在石蜡油溶剂中并通过将金属硒溶解在石蜡油中制备第二溶液来制备初级溶液(S110); (b)通过向第二溶液中加入初级溶液形成掺杂有锰的硒化镉量子点,反之亦然(S120); (c)生长掺杂有锰的硒化镉量子点,以便具有特定波长的发射区域和带隙(S130); 和(d)洗涤掺杂有锰的生长的硒化镉量子点。 石蜡油和油酸对于初级溶液的体积比为1:10-100:1。 初级溶液中镉离子与锰离子的摩尔比为100:4至100:40。 初级溶液中锰离子的摩尔浓度为10-30mM,第二级溶液中硒离子的摩尔浓度为20-60mM。 为了制备初级溶液,维持160-180℃的温度,直到溶液中除石蜡油和油酸之外的有机溶剂被充分释放。 为了制备二次溶液,温度设定为200-240℃。 此外,镉源是CdO和Cd醋酸盐中的一种,锰源是醋酸锰。
    • 5. 发明公开
    • 균일한 두께를 가지는 얇은 카드뮴 셀레나이드 나노 리본 및 그 제조방법
    • 具有均匀厚度的ULTRATHIN CDSE NANORIBONS及其制备方法
    • KR1020070099737A
    • 2007-10-10
    • KR1020060030850
    • 2006-04-05
    • 재단법인서울대학교산학협력재단
    • 현택환주진
    • B82B3/00C01B19/04C01G11/00C01B19/00
    • C01B19/00B82Y30/00B82Y40/00C01B19/04C01G11/00C01P2004/17
    • Cadmium selenide nanoribbons having a uniform thickness are provided to emit a blue light having a narrow full width at half maximum of the electroluminescent wavelength and be manufactured at low temperature of 100°C or below. Cadmium selenide nanoribbons having a uniform thickness grow along a crystal face(0001) and are surrounded by crystal faces(1100,1120). A method for manufacturing cadmium selenide semiconductor nanoribbons comprising the cadmium selenide nanoribbons includes the steps of: (i) adding CdCl2 to a C3-C10 alkyl amine, heating and stirring the admixture to form a Cd-alkylamine complex; (ii) adding Se to a C3-C10 alkyl amine, stirring the admixture, and introducing carbon monoxide into the admixture to form a Se precursor; (iii) mixing the Cd-alkylamine complex with the Se precursor and heating the mixture; and (iv) growing nanoribbons while keeping a solution containing the Cd-alkylamine complex and the Se precursor at suitable temperature for growth of nanocrystals.
    • 提供具有均匀厚度的硒化镉纳米带,以发射具有电致发光波长半个全宽的全宽的蓝光,并在100℃或更低的低温下制造。 具有均匀厚度的硒化镉纳米带沿着晶面(0001)生长并被晶面包围(1100,1120)。 包含硒化镉纳米带的硒化镉半导体纳米带的制造方法包括以下步骤:(ⅰ)将CCl 2加入到C 3 -C 10烷基胺中,加热搅拌混合物以形成镉 - 烷基胺络合物; (ii)向C 3 -C 10烷基胺中加入Se,搅拌混合物,并将一氧化碳引入混合物中以形成Se前体; (iii)将Cd-烷基胺配合物与Se前体混合并加热该混合物; 和(iv)生长纳米带,同时保持包含Cd-烷基胺络合物和Se前体的溶液在合适的温度下生长纳米晶体。