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1. 发明授权

KR101783104B1 나노와이어 번들 어레이, 광대역의 초고성능 옵티컬 필름 및 그 제조 방법 有权
公开(公告)号：KR101783104B1
公开(公告)日：2017-09-28
申请号：KR1020150152643
申请日：2015-10-30
申请人： 연세대학교 산학협력단
发明人： 김경식 , 강구민 , 배규영
IPC分类号： G02B6/10
CPC分类号： G02B5/0247 , B82Y20/00 , B82Y30/00 , B82Y40/00 , G02B5/02 , G02B5/0268 , G02B5/0278 , Y02E10/52 , Y02E10/549 , Y10S977/766
摘要： 본발명의실시예들은광전소자시스템및 광학시스템의광 특성을향상시키기위한옵티컬헤이즈의제어가가능한나노와이어번들어레이, 광대역의초고성능옵티컬필름및 그제조방법을제시한다.

2. 发明公开

KR1020170050737A 나노와이어 번들 어레이, 광대역의 초고성능 옵티컬 필름 및 그 제조 방법 有权
标题翻译：纳米线束阵列，宽带超高性能光学薄膜及其制造方法
公开(公告)号：KR1020170050737A
公开(公告)日：2017-05-11
申请号：KR1020150152643
申请日：2015-10-30
申请人： 연세대학교 산학협력단
发明人： 김경식 , 강구민 , 배규영
IPC分类号： G02B6/10
CPC分类号： G02B5/0247 , B82Y20/00 , B82Y30/00 , B82Y40/00 , G02B5/02 , G02B5/0268 , G02B5/0278 , Y02E10/52 , Y02E10/549 , Y10S977/766
摘要： 본발명의실시예들은광전소자시스템및 광학시스템의광 특성을향상시키기위한옵티컬헤이즈의제어가가능한나노와이어번들어레이, 광대역의초고성능옵티컬필름및 그제조방법을제시한다.
摘要翻译：本发明的实施例提供一种能够控制用于改善光电元件系统和光学系统的光学特性的光学雾度的纳米线束阵列，宽带超高性能光学膜及其制造方法。

3. 发明授权

KR100874912B1 반도체 소자 및 그 제조방법 有权
标题翻译： 반도체소자및그제조방법
公开(公告)号：KR100874912B1
公开(公告)日：2008-12-19
申请号：KR1020060123369
申请日：2006-12-06
申请人： 삼성전자주식회사
发明人： 최영문 , 김지영 , 여인석 , 이선우
IPC分类号： H01L27/108 , H01L27/04 , B82Y10/00
CPC分类号： H01L28/91 , B82Y10/00 , H01L27/10817 , H01L27/10852 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/41725 , Y10S977/742 , Y10S977/762 , Y10S977/766
摘要： Provided are a semiconductor device and a method of manufacturing the semiconductor device, for example, a semiconductor device using carbon nanotubes or nanowires as lower electrodes of a capacitor, and a method of manufacturing the semiconductor device. The semiconductor device may include a lower electrode including a plurality of tubes or wires on a semiconductor substrate, a dielectric layer on the surface of the lower electrode, and an upper electrode on the surface of the dielectric layer, wherein the plurality of tubes or wires radiate outwardly from each other centering on the lower portion of the plurality of tubes or wires. Thus, the off current of the capacitor may be increased by increasing the surface area of the lower electrodes of the capacitor.
摘要翻译：本发明提供一种半导体装置以及该半导体装置的制造方法，例如，使用碳纳米管或纳米线作为电容器的下部电极的半导体装置以及该半导体装置的制造方法。半导体器件可以包括在半导体衬底上包括多个管或导线的下电极，在下电极的表面上的介电层以及在介电层的表面上的上电极，其中多个管或导线以多个管或线的下部为中心彼此向外辐射。因此，通过增加电容器的下电极的表面积可以增加电容器的截止电流。

4. 发明公开

KR1020080051754A 반도체 소자 및 그 제조방법 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：KR1020080051754A
公开(公告)日：2008-06-11
申请号：KR1020060123369
申请日：2006-12-06
申请人： 삼성전자주식회사
发明人： 최영문 , 김지영 , 여인석 , 이선우
IPC分类号： H01L27/108 , H01L27/04 , B82Y10/00
CPC分类号： H01L28/91 , B82Y10/00 , H01L27/10817 , H01L27/10852 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/41725 , Y10S977/742 , Y10S977/762 , Y10S977/766
摘要： A semiconductor device and a fabricating method thereof are provided to maximize an off current of a capacitor by increasing the surface area of the lower electrode of the capacitor. A lower electrode having plural tubes or wires(143) is formed on a semiconductor substrate, and a dielectric layer(147) is formed on the surface of the lower electrode. An upper electrode(149) is formed on the surface of the dielectric layer. Tubes or wires are arranged in a radial direction in such a way that each horizontal interval is increased in an upward direction. The lower electrode has a transistor including a source region(103) and a drain region(105) which are separated from each other, and a gate crossing over a channel region between the source and the drain region. The lower electrode is connected to the source region via contact plugs(118,121).
摘要翻译：提供半导体器件及其制造方法，以通过增加电容器的下电极的表面积来最大化电容器的截止电流。在半导体基板上形成具有多个管或导线（143）的下电极，在下电极的表面上形成介电层（147）。在电介质层的表面上形成上电极（149）。管或电线以径向方式布置，使得每个水平间隔在向上方向上增加。下部电极具有晶体管，其包括彼此分离的源极区（103）和漏极区（105），栅极与源极和漏极区域之间的沟道区域交叉。下电极经由接触插塞（118,121）连接到源极区域。

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