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    • 8. 发明公开
    • 질화붕소나노튜브의 정제 및 표면처리 방법
    • 硼氮化钠的现场净化和表面处理方法
    • KR1020130097253A
    • 2013-09-03
    • KR1020120018434
    • 2012-02-23
    • 한국원자력연구원
    • 김재우서영수최진혁서덕봉
    • C01B21/064B01D45/12B82B3/00
    • C01B21/0648B01D45/12C01P2004/13C01P2006/22C01P2006/80
    • PURPOSE: An in-situ purification and surface treatment method for boron nitride nanotubes is provided to improve the polymer dispersibility and integrity of boron nitride nanotubes by removing impurities and improving polymer wettability. CONSTITUTION: An in-situ purification and surface treatment method for boron nitride nanotubes comprises: a step of obtaining a mixture by combining boron nitride nanotubes with polymers after mixing the boron nitride nanotubes with the polymers in a reduction atmosphere; and a step of obtaining supernatant by separating a mixture into the supernatant and precipitates by a centrifugal process. [Reference numerals] (AA) Before purification; (BB) Amine-PEG first upper fluid; (CC) Amine-PEG first precipitate; (DD) Amine-PEG second fluid
    • 目的:提供氮化硼纳米管的原位纯化和表面处理方法,通过去除杂质和提高聚合物润湿性来改善氮化硼纳米管的聚合物分散性和完整性。 构成:氮化硼纳米管的原位纯化和表面处理方法包括:在还原气氛中将氮化硼纳米管与聚合物混合后,通过将氮化硼纳米管与聚合物组合而获得混合物的步骤; 以及通过将混合物分离成上清液并通过离心方法沉淀获得上清液的步骤。 (AA)净化前; (BB)胺-PEG第一上液; (CC)胺-BEG首先沉淀; (DD)胺-BEG第二流体
    • 10. 发明公开
    • 다성분계 저온 공융 온도 시스템을 이용한 고품질 육방정 질화붕소 나노시트 제조 방법
    • 使用多组分保护点系统形成高质量六方硼酸纳米粒子的方法
    • KR1020120096753A
    • 2012-08-31
    • KR1020110016037
    • 2011-02-23
    • 한국과학기술원
    • 전석우홍순형이동주박광현
    • C01B21/064C04B35/58B82B3/00B82Y40/00
    • C01B21/0648C01P2002/82C01P2002/88C01P2004/04C01P2004/24
    • PURPOSE: A method for manufacturing hexagonal boron nitride nano-sheets using a multiple component-based eutectic point system is provided to stably implement operational processes by using salts instead of metals. CONSTITUTION: A method for manufacturing hexagonal boron nitride nano-sheets includes the following: a salt mixture and hexagonal boron nitride are mixed to prepare a hexagonal boron nitride-salt mixture; the hexagonal boron nitride-salt mixture is heated at a temperature more than or equal to an eutectic point to dissolve the salt mixture; alkali metal ions or alkali earth metal ions generated from the dissolution of the salt mixture are implanted into the interlayer of the hexagonal boron nitride to widen the interlayer gap of the hexagonal boron nitride; the layers of the hexagonal boron nitride are separated to form the interlayer compound of the hexagonal boron nitride(S20); the alkali metal ions or the alkali earth metal ions are removed from the interlayer compound of the hexagonal boron nitride; and hexagonal boron nitride nano-sheets are obtained(S30).
    • 目的:提供使用基于多成分的共晶点系统制造六方氮化硼纳米片的方法,以通过使用盐代替金属来稳定地实施操作过程。 构成:制造六方氮化硼纳米片的方法包括:将盐混合物和六方氮化硼混合以制备六方氮化硼 - 盐混合物; 在高于或等于共晶点的温度下加热六方氮化硼盐混合物以溶解盐混合物; 将从盐混合物的溶解产生的碱金属离子或碱土金属离子注入到六方氮化硼的中间层中,以加宽六方氮化硼的层间间隙; 分离六方氮化硼的层,形成六方氮化硼的层间化合物(S20)。 从六方氮化硼的层间化合物中除去碱金属离子或碱土金属离子; 并获得六方氮化硼纳米片(S30)。