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    • 9. 发明公开
    • 이온주입법에의한대전방지용고분자재료의집적회로트레이제조방법
    • 用于通过离子注射方法制备用于预防电化的聚合物材料的集成电路的方法
    • KR1020000032788A
    • 2000-06-15
    • KR1019980049382
    • 1998-11-18
    • 주식회사 세우글로벌오복환
    • 김진철
    • H01L21/265
    • C23C14/48B29C59/16B29C2035/0872
    • PURPOSE: A method is provided to fabricate an IC tray for preventing electrification effectively using an ion injection method. The method solves the problems of a dimension variation of the IC tray, the degradation of endurance of a deposited material due to the external physical and chemical cause, the generation of unnecessary processing time and cost due to the relatively low surface electrical conductivity. CONSTITUTION: A method for fabricating an IC tray is provided to improve the anti-electrification property by obtaining a surface electrical conductivity of 10¬6 Ohm/square centimeters ¯ 10¬12 Ohm/square centimeters, by injecting gas ions such as nitrogen and argon or metal ions such as Ti, Li and Al into a depth of 1.5 micrometers from the surface of the IC tray under the ion injection condition of an acceleration voltage below 2MeV, a current density below 30 mA/square centimeters.
    • 目的:提供一种制造IC托盘的方法,用于使用离子注入方法有效地防止起电。 该方法解决了IC托盘的尺寸变化,由于外部物理和化学原因导致的沉积材料的耐久性降低,由于相对低的表面电导率而产生不必要的处理时间和成本的问题。 构成:提供一种制造IC托盘的方法,通过注入气体离子如氮气和氩气,通过获得10×10欧姆/平方厘米10〜12欧姆/平方厘米的表面电导率来提高抗起电性能 或金属离子如Ti,Li和Al,在加速电压低于2MeV,电流密度低于30mA /平方厘米的离子注入条件下,离IC托盘表面1.5微米深。