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1. 发明公开

KR20120037838A Transistor and electronic device including the same 审中-公开
标题翻译：包括其的晶体管和电子器件
公开(公告)号：KR20120037838A
公开(公告)日：2012-04-20
申请号：KR20100099542
申请日：2010-10-12
申请人： SAMSUNG ELECTRONICS CO LTD , SNU R& DB FOUNDATION
发明人： KWON DAE WOONG , PARK JAE CHUL , PARK BYUNG GOOK , KIM SANG WAN , KIM JANG HYUN , CHANG JI SOO
IPC分类号： H01L29/786 , G02F1/136
CPC分类号： H01L29/7869 , H01L29/4908
摘要： PURPOSE: A transistor and an electronic device including the same are provided to preventing electrons from moving from a gate to a gate insulation layer by forming a charge blocking layer with materials which increase energy barrier. CONSTITUTION: A channel layer(C1) includes an oxide semiconductor. A source electrode(S1) and a drain electrode(D1) are contacted with both ends of the channel layer. A gate(G1) is separated from the channel layer. A gate insulation layer(Gl1) is formed between the channel layer and the gate. A charge blocking layer(B1) is formed between the gate insulation layer and the gate.
摘要翻译：目的：提供晶体管及其电子器件，以通过用增加能量势垒的材料形成电荷阻挡层来防止电子从栅极移动到栅极绝缘层。构成：通道层（C1）包括氧化物半导体。源电极（S1）和漏电极（D1）与沟道层的两端接触。栅极（G1）与沟道层分离。在沟道层和栅极之间形成栅极绝缘层（Gl1）。在栅极绝缘层和栅极之间形成电荷阻挡层（B1）。

2. 发明公开

KR20180053157A 빔 스티어링 소자 및 이를 적용한 시스템 审中-公开
公开(公告)号：KR20180053157A
公开(公告)日：2018-05-21
申请号：KR20160150588
申请日：2016-11-11
申请人： SAMSUNG ELECTRONICS CO LTD
发明人： PARK JAE CHUL
IPC分类号： H01S3/00 , H01L21/02 , H01L29/868 , H01L29/94 , H01S3/063
CPC分类号： G02F1/2955 , B81B7/0003 , G02B6/3596 , G02B6/4257
摘要： 빔스티어링소자및 이를적용한시스템이개시된다. 빔스티어링소자는, 기판상에배열되어빔을전달하는채널을형성하는도파로와, 채널을이루는도파로를따라배열된복수의모듈레이터와, 복수의모듈레이터를구동하는구동회로를포함한다. 복수의모듈레이터각각은전기적인신호에따라도파로를통과하는광의굴절율을변화시켜위상변화를발생시키도록마련된다.

3. 发明授权

KR100763912B1 A-SI TFT AND ORGANIC LIGHT EMITTING DISPLAY EMPLOYING THE SAME 无效
标题翻译： A-SI TFT和有机发光显示器使用它
公开(公告)号：KR100763912B1
公开(公告)日：2007-10-05
申请号：KR20060034673
申请日：2006-04-17
申请人： SAMSUNG ELECTRONICS CO LTD
发明人： PARK JAE CHUL , PARK YOUNG SOO , CHA YOUNG KWAN
IPC分类号： H01L29/786 , H01L51/52
CPC分类号： H01L29/78606 , H01L27/1296 , H01L27/3244 , H01L29/78603 , H01L29/78663
摘要： An amorphous silicon TFT and an organic light emissive display with the same are provided to recover stably a threshold voltage by applying the heat using a heat generating portion. An amorphous silicon TFT(10) includes an amorphous silicon TFT portion and a heat generating portion. The amorphous silicon TFT portion includes a gate electrode(14), a gate insulating layer(15), an amorphous silicon layer(17) and source/drain electrodes(18,19). The amorphous silicon TFT portion is formed on a substrate(11). The heat generating portion(12) is used for recovering a threshold voltage by transmitting the heat to the amorphous silicon layer. An insulating layer is interposed between the substrate and the amorphous silicon TFT portion. The heat generating portion is located at a predetermined portion corresponding to the amorphous silicon layer between the substrate and the insulating layer.
摘要翻译：提供非晶硅TFT和具有该非晶硅TFT的有机发光显示器，以通过使用发热部分施加热量来稳定地恢复阈值电压。非晶硅TFT（10）包括非晶硅TFT部分和发热部分。非晶硅TFT部分包括栅极（14），栅极绝缘层（15），非晶硅层（17）和源极/漏极（18,19）。非晶硅TFT部分形成在基板（11）上。发热部（12）用于通过将热传递到非晶硅层来恢复阈值电压。在基板和非晶硅TFT部分之间设置有绝缘层。发热部分位于与衬底和绝缘层之间的非晶硅层对应的预定部分。

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