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    • 2. 发明授权
    • 유기절연체의 신규 표면 처리 방법 및 이를 적용한유기박막트랜지스터
    • 有机绝缘子和有机薄膜晶体管的新表面处理方法
    • KR100878449B1
    • 2009-01-19
    • KR1020070079440
    • 2007-08-08
    • 한국화학연구원
    • 이미혜안택최유정
    • H01L29/786H01L21/31
    • H01L51/052H01L51/0529
    • A surface treatment method of organic insulator capable of improving transistor property and organic thin film transistor using the same are provided to improve crystal property of organic semiconductor by using hydrophobic material on organic insulation film. A hydrophobic surface treatment layer is formed by reacting thiol compound on a surface of an organic insulation film. In the organic insulation film, unsaturated bonding is generated on the surface. The organic insulation film is made of polyimide or polyimide copolymer having the unsaturated bonding and mass average molecular weight of 5000~1000000. A reaction of the thiol compound and the organic insulation thin film surface is generated by contacting an organic insulator surface on group saturated into the thiol compound.
    • 提供能够提高晶体管性能的有机绝缘体的表面处理方法和使用其的有机薄膜晶体管,以通过在有机绝缘膜上使用疏水性材料来改善有机半导体的晶体性质。 通过使有机绝缘膜的表面上的硫醇化合物反应形成疏水性表面处理层。 在有机绝缘膜中,表面产生不饱和键。 有机绝缘膜由不饱和键和质均分子量为5000〜1000000的聚酰亚胺或聚酰亚胺共聚物制成。 通过使饱和的饱和的有机绝缘体表面与硫醇化合物接触来产生硫醇化合物和有机绝缘薄膜表面的反应。