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1. 发明授权

KR101297575B1 폴리페닐카보실란을 이용한 수분투과 방지막의 제조방법 有权
标题翻译：使用聚苯乙烯制造水分阻挡膜的方法
公开(公告)号：KR101297575B1
公开(公告)日：2013-08-20
申请号：KR1020100125552
申请日：2010-12-09
申请人： 한국세라믹기술원
发明人： 김영희 , 김수룡 , 권우택 , 황종희 , 이윤주 , 이정현
IPC分类号： C08J7/04 , C08L83/04 , C09D183/04 , C08J5/18
摘要： 본 발명은 플라스틱 필름 상에 수분투과 방지막을 형성하는 제조방법에 관한 것으로, 구체적으로는 폴리페닐카보실란을 이용하여 SiOC 조성을 가진 수분투과방지막을 제조하는 것이다. 본 발명에 따라 제조된 수분투과 방지막은 내열성, 내화학성 및 기체투과방지 특성이 우수하여 E-paper, LCD 및 OLED 등에 이용되는 플렉시블 디스플레이 기판의 코팅소재로 사용이 가능하다.

2. 发明公开

KR1020120064359A 폴리페닐카보실란을 이용한 수분투과 방지막의 제조방법 有权
标题翻译：使用聚苯乙烯制造水分阻挡膜的方法
公开(公告)号：KR1020120064359A
公开(公告)日：2012-06-19
申请号：KR1020100125552
申请日：2010-12-09
申请人： 한국세라믹기술원
发明人： 김영희 , 김수룡 , 권우택 , 황종희 , 이윤주 , 이정현
IPC分类号： C08J7/04 , C08L83/04 , C09D183/04 , C08J5/18
摘要： PURPOSE: A manufacturing method of a water-impermeable membrane is provided to enhance heat resistance and chemical resistance, thereby applying to coating materials for flexible display substrate which is used for E-paper, LCD, and OLED. CONSTITUTION: A manufacturing method of a water-impermeable membrane comprises the following steps: a step of manufacturing polyphenyl carbosilane solution by dissolving polyphenylcarbosilane in organic solvent; and a step of thermosetting a coating material after coating the polyphenyl carbosilane solution on a plastic film. In S1 step, the polyphenyl carbosilane solution has a concentration of 5-30 weight%, and polyphenyl carbosilane has average molecular weight of 2000-6000. The organic solvent is one or more selected from hexane, cyclohexane, toluene, tetrahydrofuran, benzene, and chloroform.
摘要翻译：目的：提供不透水膜的制造方法以提高耐热性和耐化学性，从而适用于用于电子纸，LCD和OLED的柔性显示基板的涂料。构成：不透水膜的制造方法包括以下步骤：通过将聚苯基碳硅烷溶解在有机溶剂中制造聚苯基硅烷溶液的步骤; 以及在将聚苯基碳硅烷溶液涂布在塑料膜上之后使涂料热固化的步骤。在S1步骤中，聚苯基甲硅烷溶液的浓度为5-30重量％，聚苯基碳硅烷的平均分子量为2000-6000。有机溶剂是选自己烷，环己烷，甲苯，四氢呋喃，苯和氯仿中的一种或多种。

3. 发明授权

KR101145841B1 폴리페닐카보실란을 이용한 저유전 박막의 제조방법 및 이의 저유전 박막 有权
标题翻译：使用聚苯乙烯和低不饱和固化膜的低纯度恒定膜的方法
公开(公告)号：KR101145841B1
公开(公告)日：2012-05-17
申请号：KR1020100012326
申请日：2010-02-10
申请人： 한국세라믹기술원
发明人： 김영희 , 김수룡 , 권우택 , 이윤주 , 이정현 , 김정주
IPC分类号： H01L21/31 , H01L21/208
摘要： PURPOSE: A method for manufacturing a low dielectric thin film using polyphenylcarbosilane and the low dielectric thin film thereof are provided to obtain a thin film with SiOCH composition by curing and thermally processing a silicon wafer after polyphenylcarbosilane is coated on the silicon wafer through a solution process. CONSTITUTION: Polyphenylcarbosilane solutions with a density of 5 to 30 weight% are made by dissolving polyphenylcarbosilane in organic solvents. The polyphenylcarbosilane solutions are coated on the silicon wafer. A silicon wafer coated with the polyphenylcarbonsilane is cured at 150 to 350 degrees centigrade for 10 minutes to one hour. The cured silicon wafer is thermally processed at 400 to 500 degrees centigrade for 10 minutes to one hour.

4. 发明公开

KR1020110092734A 폴리페닐카보실란을 이용한 저유전 박막의 제조방법 및 이의 저유전 박막 有权
标题翻译：使用聚苯乙烯和低不饱和固化膜的低纯度恒定膜的方法
公开(公告)号：KR1020110092734A
公开(公告)日：2011-08-18
申请号：KR1020100012326
申请日：2010-02-10
申请人： 한국세라믹기술원
发明人： 김영희 , 김수룡 , 권우택 , 이윤주 , 이정현 , 김정주
IPC分类号： H01L21/31 , H01L21/208
CPC分类号： H01L21/02282 , H01L21/02126 , H01L21/324
摘要： PURPOSE: A method for manufacturing a low dielectric thin film using polyphenylcarbosilane and the low dielectric thin film thereof are provided to obtain a thin film with SiOCH composition by curing and thermally processing a silicon wafer after polyphenylcarbosilane is coated on the silicon wafer through a solution process. CONSTITUTION: Polyphenylcarbosilane solutions with a density of 5 to 30 weight% are made by dissolving polyphenylcarbosilane in organic solvents. The polyphenylcarbosilane solutions are coated on the silicon wafer. A silicon wafer coated with the polyphenylcarbonsilane is cured at 150 to 350 degrees centigrade for 10 minutes to one hour. The cured silicon wafer is thermally processed at 400 to 500 degrees centigrade for 10 minutes to one hour.
摘要翻译：目的：提供一种使用聚苯基碳硅烷制造低电介质薄膜的方法及其低电介质薄膜，以通过固溶和热处理硅晶片在硅晶片上通过溶液工艺涂覆硅树脂后获得具有SiOCH组成的薄膜。构成：通过将聚苯基碳硅烷溶解在有机溶剂中制成密度为5〜30重量％的聚苯基碳硅烷溶液。将聚苯基碳硅烷溶液涂覆在硅晶片上。用聚苯基碳硅烷涂覆的硅晶片在150-350摄氏度下固化10分钟至1小时。将固化的硅晶片在400至500摄氏度下热处理10分钟至1小时。

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