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    • 7. 发明公开
    • 탄소나노튜브 센서의 제조방법 및 이에 의하여 제조된 탄소나노튜브 센서
    • 制备碳纳米管传感器和碳纳米管传感器的方法
    • KR1020160080674A
    • 2016-07-08
    • KR1020140193372
    • 2014-12-30
    • 한국과학기술연구원
    • 변영태김선호김재성이제행김신근
    • H01L29/06H01L21/027
    • H01L29/0669H01L21/0273H01L2924/13061
    • 본발명은, a) 기판상에절연막을형성하는단계; (b) 상기절연막상의탄소나노튜브흡착영역에격자또는스트라이프형태의포토레지스트패턴을형성하는단계; (c) 상기포토레지스트패턴을따라상기절연막을식각(etching)하는단계; (d) 상기절연막이식각된기판에탄소나노튜브입자를흡착하는단계; (e) 상기탄소나노튜브가흡착된기판표면의포토레지스트패턴을제거하는단계; 및 (f) 상기포토레지스트패턴이제거된상기절연막상에전극을형성하는단계를포함하는탄소나노튜브센서의제조방법및 이에의하여제조된탄소나노튜브센서에관한것이다.
    • 碳纳米管传感器的制造方法技术领域本发明涉及一种碳纳米管传感器的制造方法以及由此制造的碳纳米管传感器。碳纳米管传感器的制造方法包括以下步骤:(a)在基板上形成绝缘膜; (b)在绝缘膜的碳纳米管吸附区域中形成格子状或条状的光致抗蚀剂图案; (c)根据光致抗蚀剂图案蚀刻绝缘膜; (d)在蚀刻绝缘膜的基板上吸附碳纳米管粒子; (e)除去吸附有碳纳米管的基板表面的光致抗蚀剂图案; 和(f)在除去光致抗蚀剂图案的绝缘膜上形成电极。 本发明的目的是提供一种制造碳纳米管传感器和碳纳米管传感器的方法,该碳纳米管传感器能够沿固定方向排列碳纳米管。
    • 9. 发明授权
    • 기판과의 결합력이 향상된 탄소나노튜브 기반 전계효과트랜지스터 소자의 제조방법 및 이에 의하여 제조된 탄소나노튜브 기반 전계효과트랜지스터 소자
    • 基于碳纳米管的场效应晶体管和基于碳纳米管的场效应晶体管的制备方法
    • KR101402989B1
    • 2014-06-11
    • KR1020130067285
    • 2013-06-12
    • 한국과학기술연구원
    • 변영태김선호전영민김은경김재성우덕하
    • H01L21/336H01L29/78
    • H01L51/0003H01L51/0026H01L51/0048H01L51/0508H01L51/0545Y10S977/742H01L29/0669H01L21/324
    • The present invention relates to a method of fabricating a carbon nanotube-based field effect transistor having improved adhesive strength with respect to a substrate, and the carbon nanotube-based field effect transistor fabricated thereby. The method of fabricating the carbon nanotube-based field effect transistor includes the steps of: forming an oxide layer on a substrate; forming a photoresist pattern on the oxide layer; forming a metal layer on an entire surface of a sample including a photoresist pattern; a lift-off step of removing the photoresist; absorbing a carbon nanotube on the substrate without the photoresist; performing heat treatment for the substrate in which the carbon nanotube is absorbed; and removing the metal layer. According to the present invention, since adhesive strength between the substrate and the carbon nanotube is improved, stability and reliability of a field effect transistor may be improved. When the field effect transistor is applied to a liquid sensor, a life of the sensor may extend and the reliability with respect to a result measured using the sensor may be improved.
    • 本发明涉及一种制造相对于基板具有改善的粘合强度的碳纳米管系场效应晶体管的方法,以及由此制造的基于碳纳米管的场效应晶体管。 制造基于碳纳米管的场效应晶体管的方法包括以下步骤:在衬底上形成氧化物层; 在所述氧化物层上形成光致抗蚀剂图案; 在包括光致抗蚀剂图案的样品的整个表面上形成金属层; 去除光致抗蚀剂的剥离步骤; 在没有光刻胶的基板上吸收碳纳米管; 对其中吸收碳纳米管的基板进行热处理; 并去除金属层。 根据本发明,由于提高了基板和碳纳米管之间的粘合强度,因此可以提高场效应晶体管的稳定性和可靠性。 当场效应晶体管被施加到液体传感器时,传感器的寿命可以延长,并且可以提高使用传感器测量的结果的可靠性。