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    • 4. 发明公开
    • 복합 유전체 박막과, 이를 이용한 커패시터 및 전계 효과트랜지스터와, 이들 각각의 제조 방법
    • 复合电介质薄膜,电容器及场效应晶体管及其制造方法
    • KR1020090116587A
    • 2009-11-11
    • KR1020080064112
    • 2008-07-02
    • 한국과학기술연구원
    • 김일두김호기조남규
    • H01L21/31H01L21/336H01L27/108B82Y40/00
    • H01L29/7869H01L21/02194H01L21/02266H01L28/40H01L29/4908
    • PURPOSE: A composite dielectric thin film, a capacitor and a field effect transistor using the same, and each fabrication method thereof are provided to manufacture a complex dielectrics thin film under a room temperature by distributing a crystalline filter or amorphous filler uniformly. CONSTITUTION: In a composite dielectric thin film, a capacitor and a field effect transistor using the same, and each fabrication method thereof, a amorphous dielectric matrix(10) is deposited under a room temperature less than 200 °C. The amorphous dielectric matrix includes amorphous material and a nano-crystalline material partly. The crystalline or the amorphous filler are distributed within the amorphous dielectric matrix. The filler is at least one selected from groups compose of MgO, Al2O3, SiO2, and LaAlO3. The complex dielectrics thin film is deposited under the room temperature, and a dielectric target and a filler target are sputtered in the same chamber under the room temperature less than 200 °C.
    • 目的:提供一种复合电介质薄膜,电容器和使用其的场效应晶体管及其制造方法,以均匀地分布结晶滤波器或无定形填料,在室温下制造复合电介质薄膜。 构成:在复合电介质薄膜中,使用其的电容器和场效应晶体管及其各自的制造方法,在低于200℃的室温下沉积非晶介质基体(10)。 非晶介质矩阵部分包括无定形材料和纳米晶体材料。 晶体或无定形填料分布在非晶介质基质内。 填料是选自MgO,Al2O3,SiO2和LaAlO3组成的组中的至少一种。 在室温下沉积复合电介质薄膜,并在室温小于200℃的同一室内溅射介电靶和填料靶。