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1. 发明公开

KR1020030054211A 반사형 다층 박막 미러 및 그 제조 방법 失效
标题翻译：反射多层薄膜反射镜及其制造方法
公开(公告)号：KR1020030054211A
公开(公告)日：2003-07-02
申请号：KR1020010084340
申请日：2001-12-24
申请人： 학교법인 한양학원
发明人： 안진호 , 정용재 , 이승윤 , 허성민
IPC分类号： H01L21/027
摘要： PURPOSE: A reflective multilayer thin film mirror and a method for manufacturing the same are provided to be capable of improving the yield of a device by applying the mirror to a mask for carrying out an exposure process at a semiconductor device. CONSTITUTION: An Ru layer(12) is formed on a semiconductor substrate(10). An Mo layer(14) is formed on the Ru layer. An Sr layer(16) is formed on the Mo layer. A silicon layer(18) is then formed on the Sr layer. Preferably, the first thickness rate between the Ru layer and Mo layer is at the range of 20:80-60:40 % and the second thickness rate between the Sr layer and silicon layer is at the range of 30-60:70-40 %. Preferably, the first sum thickness of the Ru layer and Mo layer is at the range of 2.4-3.2 nm and the second sum thickness of the Sr layer and silicon layer is at the range of 3.6-4.4 nm.
摘要翻译：目的：提供一种反射型多层薄膜反射镜及其制造方法，其能够通过将反射镜应用于在半导体器件上进行曝光处理的掩模来提高器件的产量。构成：在半导体衬底（10）上形成Ru层（12）。在Ru层上形成Mo层（14）。在Mo层上形成Sr层（16）。然后在Sr层上形成硅层（18）。优选地，Ru层和Mo层之间的第一厚度率在20:80-60:40％的范围内，并且Sr层和硅层之间的第二厚度比率在30-60:70-40的范围内％。优选地，Ru层和Mo层的第一和厚度在2.4-3.2nm的范围内，并且Sr层和硅层的第二和厚度在3.6-4.4nm的范围内。

2. 发明公开

KR1020020089613A 극자외선 노광 공정용 Ｒｕ/Ｍｏ/Ｓｉ 반사형 다층 박막미러 有权
标题翻译：钌/钼/硅反射型多层薄膜曝光工艺使用极端超紫外线
公开(公告)号：KR1020020089613A
公开(公告)日：2002-11-30
申请号：KR1020010028385
申请日：2001-05-23
申请人： 학교법인 한양학원
发明人： 안진호 , 정용재 , 이승윤 , 허성민
IPC分类号： G02B1/10 , G02B5/08 , C03C17/34 , G03F7/20
CPC分类号： G02B1/10 , C03C17/3411 , G02B5/0833 , G03F7/70166
摘要： PURPOSE: A ruthenium/molybdenum/silicon reflection type multi-layered thin film for exposure process using extreme ultraviolet rays is provided to improve a yield of the exposure process using extreme ultraviolet rays by using a reflective multi-layered thin film having high reflexibility. CONSTITUTION: A ruthenium layer(12), a molybdenum layer(13), and a silicon layer(14) are sequentially laminated on a surface of a silicon substrate(11). A multi-layer of three layers is formed by laminating the ruthenium layer(12), the molybdenum layer(13), and the silicon layer(14). A multi-layered thin film is formed by laminating the multi-layer including the ruthenium layer(12), the molybdenum layer(13), and the silicon layer(14) forty times. Accordingly, the multi-layered thin film is formed with 40 multi-layers. The ruthenium layer(12), the molybdenum layer(13), and the silicon layer(14) have thickness of 1.12nm, 1.68nm, and 4nm, respectively.
摘要翻译：目的：提供一种用于使用极紫外线的曝光工艺的钌/钼/硅反射型多层薄膜，以通过使用具有高反射性的反射性多层薄膜来提高使用极紫外线的曝光工艺的产量。构成：在硅衬底（11）的表面上依次层叠钌层（12），钼层（13）和硅层（14）。通过层叠钌层（12），钼层（13）和硅层（14）来形成多层三层。通过将包含钌层（12），钼层（13）和硅层（14）的多层层叠四十次来形成多层薄膜。因此，多层薄膜形成为40多层。钌层（12），钼层（13）和硅层（14）分别具有1.12nm，1.68nm和4nm的厚度。

3. 发明授权

KR100412069B1 구조인자 조절을 통한 극자외선 노광공정용 Ｍｏ/Ｓｉ반사형 다층박막 失效
标题翻译： 인극극극Mo Mo
公开(公告)号：KR100412069B1
公开(公告)日：2003-12-18
申请号：KR1020020009057
申请日：2002-02-20
申请人： 학교법인 한양학원
发明人： 안진호 , 정용재 , 이승윤 , 허성민 , 손영수
IPC分类号： H01L21/027
摘要： PURPOSE: A molybdenum-silicon reflection type multilayered thin film for an ultraviolet exposure process by controlling a structure factor is provided to increase yield by forming a multilayered thin film mirror having high reflectivity regarding the light of an ultraviolet region. CONSTITUTION: A dual structure of a molybdenum layer and a silicon layer is repeatedly stacked on a semiconductor substrate in a period of 40. At least one of the lowermost molybdenum layers in the first to fifth periods of the stack structure is 2.9-3.3 nanometer in thickness. The molybdenum layer of the stack structure in the period of sixth or higher is 2.7-2.9 nanometer in thickness and the silicon layer is 3.9-4.1 nanometer in thickness.
摘要翻译：目的：通过控制结构因素来提供用于紫外曝光工艺的钼 - 硅反射型多层薄膜，以通过形成对紫外区域的光具有高反射率的多层薄膜镜来提高产量。构成：钼层和硅层的双重结构在40周期内重复堆叠在半导体衬底上。在堆叠结构的第一到第五周期中的最下面的钼层中的至少一层是2.9-3.3纳米厚度。堆叠结构在六分之一或更高阶段中的钼层的厚度为2.7-2.9纳米，并且硅层的厚度为3.9-4.1纳米。

4. 发明授权

KR100454081B1 반사형 다층 박막 미러 및 그 제조 방법 失效
标题翻译： 반사형다층박막미러및그제조방법
公开(公告)号：KR100454081B1
公开(公告)日：2004-10-20
申请号：KR1020010084340
申请日：2001-12-24
申请人： 학교법인 한양학원
发明人： 안진호 , 정용재 , 이승윤 , 허성민
IPC分类号： H01L21/027
摘要： PURPOSE: A reflective multilayer thin film mirror and a method for manufacturing the same are provided to be capable of improving the yield of a device by applying the mirror to a mask for carrying out an exposure process at a semiconductor device. CONSTITUTION: An Ru layer(12) is formed on a semiconductor substrate(10). An Mo layer(14) is formed on the Ru layer. An Sr layer(16) is formed on the Mo layer. A silicon layer(18) is then formed on the Sr layer. Preferably, the first thickness rate between the Ru layer and Mo layer is at the range of 20:80-60:40 % and the second thickness rate between the Sr layer and silicon layer is at the range of 30-60:70-40 %. Preferably, the first sum thickness of the Ru layer and Mo layer is at the range of 2.4-3.2 nm and the second sum thickness of the Sr layer and silicon layer is at the range of 3.6-4.4 nm.
摘要翻译：目的：提供一种反射多层薄膜反射镜及其制造方法，通过将反射镜应用于在半导体器件上进行曝光处理的掩模，能够提高器件的成品率。构成：Ru半导体层（12）形成在半导体衬底（10）上。 Mo层（14）形成在Ru层上。在Mo层上形成Sr层（16）。然后在Sr层上形成硅层（18）。优选地，Ru层和Mo层之间的第一厚度比率在20:80-60:40％的范围内，并且Sr层和硅层之间的第二厚度比率在30-60:70-40的范围内％。优选地，Ru层和Mo层的第一总和厚度在2.4-3.2nm的范围内，并且Sr层和硅层的第二总和厚度在3.6-4.4nm的范围内。

5. 发明授权

KR100725859B1 극자외선 노광 공정용 Ｒｕ/Ｍｏ/Ｓｉ 반사형 다층 박막미러 有权
标题翻译：用于极紫外光刻的Ru / Mo / Si反射多层镜
公开(公告)号：KR100725859B1
公开(公告)日：2007-06-08
申请号：KR1020010028385
申请日：2001-05-23
申请人： 학교법인 한양학원
发明人： 안진호 , 정용재 , 이승윤 , 허성민
IPC分类号： G02B1/10 , G02B5/08 , C03C17/34 , G03F7/20
摘要： 본 발명은 차세대 노광공정 중 하나인 극자외선 노광 기술에 쓰이는 반사형 미러를 Ru/Mo/Si을 일정한 두께로 교대로 적층시켜 형성함에 의해 극자외선 영역의 빛에 대해 고반사율을 가진 다층박막 미러를 극자외선 노광공정용 마스크에 적용시켜 수율을 향상시킬 수 있는 극자외선 노광 공정용 Ru/Mo/Si 반사형 다층 박막 미러에 관한 것이다.
본 발명은 극자외선 노광공정용 다층 미러에 있어서, 기판 위에 각각 Ru/Mo/Si의 3층 구조로 이루어진 다수층의 다층박막으로 구성되어, 극자외선 영역의 빛에 대해 고반사율을 갖는 것을 특징으로 한다.
극자외선 노광, 다층 미러, 고반사율, Ru/Mo/Si의 3층 구조

6. 发明公开

KR1020030069428A 구조인자 조절을 통한 극자외선 노광공정용 Ｍｏ/Ｓｉ반사형 다층박막 失效
标题翻译：通过控制结构因子的超紫外线曝光过程的多晶硅反射型多层薄膜
公开(公告)号：KR1020030069428A
公开(公告)日：2003-08-27
申请号：KR1020020009057
申请日：2002-02-20
申请人： 학교법인 한양학원
发明人： 안진호 , 정용재 , 이승윤 , 허성민 , 손영수
IPC分类号： H01L21/027
摘要： PURPOSE: A molybdenum-silicon reflection type multilayered thin film for an ultraviolet exposure process by controlling a structure factor is provided to increase yield by forming a multilayered thin film mirror having high reflectivity regarding the light of an ultraviolet region. CONSTITUTION: A dual structure of a molybdenum layer and a silicon layer is repeatedly stacked on a semiconductor substrate in a period of 40. At least one of the lowermost molybdenum layers in the first to fifth periods of the stack structure is 2.9-3.3 nanometer in thickness. The molybdenum layer of the stack structure in the period of sixth or higher is 2.7-2.9 nanometer in thickness and the silicon layer is 3.9-4.1 nanometer in thickness.
摘要翻译：目的：提供一种通过控制结构因素进行紫外线曝光工艺的钼硅反射型多层薄膜，以通过形成关于紫外线区域的高反射率的多层薄膜反射镜来提高产量。构成：在40个周期内，在半导体衬底上重复层叠钼层和硅层的双重结构。堆叠结构的第一至第五周期中的最下层钼层中的至少一个为2.9-3.3纳米厚度。第六层或更高层的堆叠结构的钼层的厚度为2.7-2.9纳米，硅层的厚度为3.9-4.1纳米。

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