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    • 2. 发明公开
    • 도전성 유체를 사용한 릴레이 장치
    • 使用导电流体的继电器
    • KR1020070102710A
    • 2007-10-19
    • KR1020077018423
    • 2006-08-29
    • 파나소닉 전공 주식회사
    • 요코야마고지우오토메리이치후루쿠보에이이치가키모토가쓰미메시이료스케우에다히데키고바야시마사카즈
    • H01H29/02
    • H01H29/00H01H29/004H01H2029/008H01H2057/006
    • A relay device using a conductive fluid and having an excellent switching response is provided. The relay device is formed by bonding a semiconductor substrate to an insulator substrate, and mainly comprises a stacked layer body having an interior space, at least two contact points exposed to the interior space, a diaphragm portion facing the interior space, conductive fluid sealed in the interior space, and an actuator for elastically deforming the diaphragm portion. The diaphragm portion is provided on the semiconductor substrate, so that the drive force of the actuator necessary for elastically deforming the diaphragm portion can be reduced and the volume change of the interior space can be obtained with a fast response. This volume change causes the positional displacement of the conductive fluid in the interior space, thereby forming a conduction state or non-conduction state between the contact points.
    • 提供了使用导电流体并具有优异的切换响应的继电器装置。 中继装置是通过将半导体基板接合到绝缘体基板而形成的,主要包括具有内部空间的叠层体,至少两个暴露于内部空间的接触点,面向内部空间的隔膜部分,密封在 内部空间和用于弹性变形隔膜部分的致动器。 隔膜部分设置在半导体基板上,从而可以减小振动板部分弹性变形所需的致动器的驱动力,并能够以较快的响应获得内部空间的体积变化。 该体积变化导致导电流体在内部空间中的位置偏移,从而在接触点之间形成导通状态或非导通状态。
    • 4. 发明公开
    • 가속도 센서
    • 가속도센서
    • KR1020030039367A
    • 2003-05-17
    • KR1020037002694
    • 2002-07-12
    • 파나소닉 전공 주식회사
    • 후루쿠보에이이치호리마사미노하라가즈야
    • G01P15/08G01C19/56G01P3/00G01P1/02
    • G01P15/123G01P1/023G01P15/08
    • 가속도 센서는 제 1 배선 접합면을 가지고 프린트 회로 보드의 보드면에 대해 평행한 감지 축의 방향으로 가해지는 가속도를 전기적 신호로 변화하기 위한 센서 칩, 제 2 및 제 3 배선 접합면들과 제 2 및 제 3 배선 접합면들 상에 형성된 배선 패턴을 포함하고 센서 칩을 지지하기 위한 배선 받침대, 및 프린트 회로 보드의 보드면 상에 장착되는 장착면과 장착면에 대해 실질적으로 평행한 제 4 배선 접합면을 가지고 센서 칩이 장착되는 배선 받침대를 수용하기 위한 패키지를 포함하고, 배선 받침대의 제 3 및 제 2 배선 접합면들 상의 배선 패턴이 각각 패키지의 패드들 및 센서 칩의 패드들로 연결될 수 있다.
    • 一种加速度传感器,包括:传感器芯片,用于将在平行于印刷电路板的板面的敏感轴的方向上施加的加速度转换为电信号,该加速度传感器具有第一引线接合面;用于支撑传感器芯片 ,其包括第二导线接合面和第三导线接合面以及形成在第二导线接合面和第三导线接合面上的布线图案以及用于容纳其上安装有传感器芯片的布线基底的封装,该封装具有安装面, 印刷电路板和基本上平行于安装面的第四导线接合面,使得布线基座的第三和第二导线接合面上的布线图案可以分别连接到封装的焊盘和传感器芯片的焊盘。
    • 6. 发明公开
    • 정전용량식 센서
    • 电容式传感器
    • KR1020090016550A
    • 2009-02-16
    • KR1020087027013
    • 2007-04-25
    • 파나소닉 전공 주식회사
    • 후루쿠보에이이치와카바야시다이스케미야지마히사카즈오오부치마사오아오키료
    • G01P15/125G01R27/26
    • G01P15/125G01P1/023G01P2015/0831
    • Disclosed is a capacitive sensor (1) comprising a fixed electrode (6) and a movable electrode (5) movably supported by an anchor portion (3) via a beam (4). In this capacitive sensor (1), a sensing portion is constituted by arranging the fixed electrode (6) and the movable electrode (5) opposite to each other in such a manner that the electrodes are apart from each other, and the capacitive sensor (1) senses a certain physical quantity by sensing a capacitance corresponding to the distance between the electrodes. In this capacitive sensor (1), a stress relaxation portion (30) for releasing stress is provided on at least one of an end (4a) of the beam (4) to be connected to the anchor portion (3) and an end (4b) of the beam (4) to be connected to the movable electrode (5).
    • 公开了一种电容式传感器(1),包括固定电极(6)和可动电极(5),活动电极(5)经由光束(4)可移动地由锚定部分(3)支撑。 在该电容式传感器(1)中,通过使固定电极(6)和可动电极(5)彼此相对设置,使得电极彼此分开,并且电容传感器 1)通过感测对应于电极之间的距离的电容来感测某一物理量。 在该电容式传感器(1)中,用于释放应力的应力松弛部(30)设置在梁(4)的端部(4a)中,以连接到锚定部(3)和端部 4b连接到可动电极(5)上的光束(4)。
    • 7. 发明公开
    • 반도체 가속도 센서
    • 半导体加速传感器
    • KR1020060126624A
    • 2006-12-07
    • KR1020067022843
    • 2006-01-20
    • 파나소닉 전공 주식회사
    • 후쿠다요시히사사카이코우지이시가미아츠시후루쿠보에이이치메시이료수케야지마타카시
    • G01P15/08H01L21/02
    • G01P15/08G01P2015/0871
    • A semiconductor acceleration sensor, wherein beam parts are formed in a roughly L-shape so as to surround a weight part. The slender L-shaped beam parts are formed so as to surround the portion of the sensor forming the weight part square-shaped in plan view, and a projected part projecting from a fixed part to the weight part and a receiving recessed part projecting from the weight part to the fixed part and surrounding the projected part are formed adjacently to the base end part of each of the beam parts. The outline o the projected part and the inner wall of the receiving recessed part are approximately the same in shape, and the movement of the weight part in any horizontal directions orthogonal to the vertical direction is limited by the receiving of the projected part on the receiving recessed part. As a result, even if an impact is applied to the acceleration sensor from the side, the weight part is not largely displaced. Accordingly, even if a large stress is applied to the beam part, the beam part is not broken.
    • 一种半导体加速度传感器,其中梁部分形成为大致L形以包围重量部分。 细长的L形梁部分形成为围绕传感器的形成重叠部分的部分,该部分在平面图中形成为正方形,并且突出部分从固定部分突出到重量部分;以及接收凹部, 与固定部分重叠并且围绕突出部分的重量部分形成在每个梁部分的基端部分附近。 接收凹部的突出部分和内壁的轮廓在形状上大致相同,并且重叠部分在垂直于垂直方向的任何水平方向上的运动受到接收上的突出部分的限制 凹陷部分。 结果,即使从侧面对加速度传感器施加冲击,重量部也不会大幅偏移。 因此,即使对梁部施加大的应力,梁部也不会断裂。
    • 8. 发明公开
    • 정전용량형 반도체물리량 센서 및 그 제조방법
    • 电容式半导体物理量传感器及其制造方法
    • KR1020070088280A
    • 2007-08-29
    • KR1020067021169
    • 2005-12-12
    • 파나소닉 전공 주식회사
    • 메시이료수케사카이코우지이시가미아츠시후루쿠보에이이치
    • H01L29/84
    • G01L9/0042G01L1/14
    • A capacitive semiconductor physical quantity sensor in which the opposing peripheral regions (bonding regions) of a glass substrate and a silicon substrate are touched to each other for anode bonding, and an anode is bonded integrally by applying an anode bonding voltage to between both substrates. A fixed electrode is provided on the bonding surface side of the glass substrate and a movable electrode is provided on the bonding surface side of the silicon substrate. Prior to anode bonding, an anti-discharge equipotential wiring for short-circuiting the fixed electrode and the movable electrode is formed on the bonding surface side of the glass substrate inside the bonding region, and the equipotential wiring is cut and removed after anode bonding. Since the sensor thus produced keeps the fixed electrode on the insulating substrate side and the movable electrode on the semiconductor substrate side at the same potential at the time of anode bonding the insulating substrate and the semiconductor substrate, discharge does not take place. Consequently, high bonding strength and desired sensor characteristics can be attained without causing generation of bonding voids or an increase in size of a sensor chip.
    • 将玻璃基板和硅基板的相对的外围区域(接合区域)彼此接触进行阳极接合的电容半导体物理量传感器,并且通过在两个基板之间施加阳极接合电压而将阳极一体地接合。 在玻璃基板的接合面侧设置固定电极,在硅基板的接合面侧设置可动电极。 在阳极接合之前,在接合区域内的玻璃基板的接合面侧形成用于短路固定电极和可动电极的防放电等电位布线,在阳极接合之后切断并除去等电位布线。 由于如此制造的传感器将绝缘基板侧的固定电极和半导体基板侧的可动电极在绝缘基板和半导体基板的阳极接合时保持相同的电位,因此不会发生放电。 因此,可以获得高的接合强度和期望的传感器特性,而不会引起接合空隙的产生或传感器芯片的尺寸的增加。