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1. 发明公开

KR1020100011023A 고유전막 형성 방법 有权
标题翻译：形成高介电常数层的方法
公开(公告)号：KR1020100011023A
公开(公告)日：2010-02-03
申请号：KR1020080072063
申请日：2008-07-24
申请人： 주식회사 원익홀딩스
发明人： 배근학 , 김경수 , 박소연 , 김형영
IPC分类号： H01L21/205
CPC分类号： H01L21/02172 , H01L21/02046 , H01L21/0228 , H01L21/02554
摘要： PURPOSE: A method for forming a high dielectric constant layer is provided to form a high dielectric layer consisting of a metal oxide by generating oxygen plasma and reacting it with a metal precursor. CONSTITUTION: An absorption layer of a metal precursor is formed on a substrate(510) by flowing the metal precursor through a gas inlet. The metal precursor remaining behind within the reaction chamber is purged. The oxygen plasma is generated in the shower head(200) within the reaction chamber and is reacted with the adsorption layer of the metal Precursor. The gas and the reaction by-product remaining behind within the reaction chamber are purged. A plasma generation region and plasma non-generation region are formed in the shower head. The metal Precursor is provided to the plasma non-generation region.
摘要翻译：目的：提供形成高介电常数层的方法，通过产生氧等离子体并与金属前体反应形成由金属氧化物构成的高介电层。构成：通过使金属前体流过气体入口，在基底（510）上形成金属前体的吸收层。清除残留在反应室后面的金属前体。在反应室内的淋浴头（200）中产生氧等离子体，并与金属前体的吸附层反应。清除反应室内剩余气体和反应副产物。在喷头中形成等离子体产生区域和等离子体非产生区域。金属前体被提供到等离子体非发生区域。

2. 发明公开

KR1020090057487A 하드마스크용 비정질탄소막을 이용한 반도체 소자의제조방법 无效
标题翻译：使用非晶碳层制备半导体器件的制造方法
公开(公告)号：KR1020090057487A
公开(公告)日：2009-06-08
申请号：KR1020070124085
申请日：2007-12-03
申请人： 주식회사 원익홀딩스
发明人： 노형욱 , 배근학 , 김경수 , 박소연
IPC分类号： H01L21/205
CPC分类号： H01L21/32055 , C23C16/4482 , C23C16/505 , H01L21/02046 , H01L21/28556
摘要： A manufacturing method of a device of a semiconductor using an amorphous carbon layer for a hard mask are provided to control property of the amorphous carbon easily by making the amorphous carbon layer of a neo-hexane compound. A manufacturing method of a device of a semiconductor using an amorphous carbon layer is comprised of the steps: a conductive layer or an oxide layer is formed on the semiconductor substrate(S110); a hard mask is formed on the conductive layer or the oxide layer (S120); a resist layer is deposited on a hard mask and it is patterned (S130); a hard mask is etched (S140); The conductive layer or the oxide layer is etched (S150); and remaining hard mask is removed(S160).
摘要翻译：提供了使用用于硬掩模的无定形碳层的半导体器件的制造方法，以通过使新己烷化合物的无定形碳层容易地控制非晶碳的性质。使用非晶碳层的半导体器件的制造方法包括以下步骤：在半导体衬底上形成导电层或氧化物层（S110）; 在导电层或氧化物层上形成硬掩模（S120）; 将抗蚀剂层沉积在硬掩模上并对其进行图案化（S130）; 蚀刻硬掩模（S140）; 蚀刻导电层或氧化物层（S150）。并且去除剩余的硬掩模（S160）。

3. 发明公开

KR1020070119169A ＣＶＤ 챔버의 세정 장치 및 방법 无效
标题翻译：清洗化学气相沉积室的装置及其清洗方法
公开(公告)号：KR1020070119169A
公开(公告)日：2007-12-20
申请号：KR1020060053424
申请日：2006-06-14
申请人： 주식회사 원익홀딩스
发明人： 배근학 , 김경수 , 김호식 , 한동훈 , 채승기 , 이상곤 , 김종산 , 김호왕 , 남태영 , 하상선 , 이내응 , 김덕진 , 윤영배
IPC分类号： H01L21/205
CPC分类号： H01L21/67028 , C23C16/4405
摘要： An apparatus for cleaning a CVD(Chemical Vaporization Deposition) chamber and a method of cleaning the same are provided to enhance efficiency in a cleaning process by supplying directly excited oxygen and nitrogen components into the inside of the CVD chamber. An apparatus for cleaning a CVD chamber includes a first cleaning gas supply line(10) and a second cleaning gas supply line(20). A first cleaning gas having gas including a fluoric component is ionized by a remote plasma source. The first cleaning gas of an ionized state is supplied through the first cleaning gas supply line. A second cleaning gas including a nitrogen oxide-based gas which is nitrogen oxide is supplied through the second cleaning gas supply line. The first cleaning gas of the ionized state is transferred through the remote plasma source to the inside of the CVD chamber. The second cleaning gas is supplied directly to the inside of the CVD chamber.
摘要翻译：提供一种用于清洁CVD（化学气相沉积）室的设备及其清洁方法，以通过将直接激发的氧和氮组分供应到CVD室的内部来提高清洗过程中的效率。一种用于清洁CVD室的设备包括第一清洁气体供应管线（10）和第二清洁气体供应管线（20）。具有包含氟组分的气体的第一清洁气体被远程等离子体源离子化。通过第一清洗气体供给管线供给离子化状态的第一清洗气体。通过第二清洗气体供给管路供给包含氮氧化物的氮氧化物系气体的第二清洗气体。离子化状态的第一清洗气体通过远程等离子体源传送到CVD室的内部。第二清洁气体直接供应到CVD室的内部。

4. 发明授权

KR100765129B1 반도체 소자의 커패시터 형성 방법 失效
标题翻译：制造半导体器件电容器的方法
公开(公告)号：KR100765129B1
公开(公告)日：2007-10-12
申请号：KR1020060064711
申请日：2006-07-11
申请人： 주식회사 원익홀딩스
发明人： 김정우 , 고성근 , 배근학 , 김호식
IPC分类号： H01L27/108
CPC分类号： H01L28/91 , H01L28/84
摘要： A method for forming a capacitor of a semiconductor device is provided to decrease the damage of a lower layer and to enlarge an effective area of the capacitor by using an O2-TEOS(Tetra-Ethyl-Ortho-Silicate) USG(Undoped Silicate Glass) deposition under a lower temperature condition and a CMP(Chemical Mechanical Polishing) process. A first polysilicon layer and an HSG(Hemi-Spherical Grain) layer are sequentially deposited on a predetermined pattern in order to form a first electrode of a capacitor(S110,S120). An O2-TEOS USG layer is deposited on the resultant structure(S130). A PEOX(Plasma Enhanced OXide) layer is exposed to the outside by polishing the first electrode using a CMP process(S140). At this time, the O2-TEOS USG layer is used as a buffer layer. The PEOX layer and the O2-TEOS USG layer are removed from the resultant structure by using an oxide wet etch process(S150). An AlO layer and a TiN layer are deposited on the PEOX removed portion(S160). A second electrode of the capacitor is formed by depositing a second polysilicon layer on the resultant structure(S170).
摘要翻译：提供一种用于形成半导体器件的电容器的方法，以通过使用O 2 -TEOS（四乙基 - 正硅酸盐）USG（未掺杂的硅酸盐玻璃）来降低下层的损伤并扩大电容器的有效面积，在较低温度条件下沉积和CMP（化学机械抛光）工艺。顺序地在预定图案上沉积第一多晶硅层和HSG（半球形晶粒）层，以便形成电容器的第一电极（S110，S120）。在所得结构上沉积O2-TEOS USG层（S130）。通过使用CMP工艺研磨第一电极，将PEOX（等离子体增强氧化物）层暴露于外部（S140）。此时，O2-TEOS USG层用作缓冲层。通过使用氧化物湿蚀刻工艺从所得结构中除去PEOX层和O 2 -TEOS USG层（S150）。在PEOX去除部分上沉积AlO层和TiN层（S160）。电容器的第二电极通过在所得结构上沉积第二多晶硅层而形成（S170）。

5. 发明授权

KR100765128B1 ＣＶＤ 챔버의 세정 장치 및 방법 有权
标题翻译：清洗化学气相沉积室的装置及其清洗方法
公开(公告)号：KR100765128B1
公开(公告)日：2007-10-11
申请号：KR1020060048921
申请日：2006-05-30
申请人： 주식회사 원익홀딩스
发明人： 배근학 , 김경수 , 김호식 , 한동훈 , 채승기 , 이상곤 , 김종산 , 김호왕 , 남태영 , 하상선 , 이내응 , 김덕진 , 윤영배
IPC分类号： H01L21/304 , H01L21/205
摘要： A cleaning apparatus and method of a CVD(Chemical Vapor Deposition) chamber are provided to improve cleaning efficiency of the CVD chamber by agitating oxygen or nitrogen elements of a solid layer using a predetermined radical containing a fluorine element and supplying directly the agitated oxygen or nitrogen elements into the CVD chamber. A cleaning apparatus of a CVD chamber includes a first cleaning gas supply line and a second cleaning gas supply line. The first cleaning gas supply line(10) is used for receiving an ionized gas, wherein the ionized gas is obtained from a first cleaning gas containing a fluorine element by using an RPS(Remote Plasma Source). The second cleaning gas supply line(20) is used for receiving a second cleaning gas containing an NxOy gas. The second cleaning gas is directly supplied into a CVD chamber.
摘要翻译：提供了一种清洁装置和CVD（化学气相沉积）室的方法，以通过使用含氟元素的预定基团搅拌固体层的氧或氮元素并直接供应搅拌的氧气或氮气来提高CVD室的清洁效率元素进入CVD室。 CVD室的清洁装置包括第一清洁气体供应管线和第二清洁气体供应管线。第一清洁气体供给管线（10）用于接收离子化气体，其中通过使用RPS（远程等离子体源）从含有氟元素的第一清洁气体获得电离气体。第二清洁气体供给管线（20）用于接收含有N x Oy气体的第二清洗气体。将第二清洁气体直接供应到CVD室中。

6. 发明授权

KR100744528B1 알에프 파워가 인가되는 가스 분리형 샤워헤드를 이용한플라즈마 원자층 증착장치 및 방법 失效
标题翻译： 알에파워가인가되는가스분리형샤워헤드를이용한플라즈마원자층장장치및방알
公开(公告)号：KR100744528B1
公开(公告)日：2007-08-01
申请号：KR1020060034183
申请日：2006-04-14
申请人： 주식회사 원익홀딩스
发明人： 배근학 , 김경수 , 김호식
IPC分类号： H01L21/205
摘要： A plasma atomic layer deposition apparatus using a shower head of a gas separative type and a method thereof are provided to minimize loss of plasma by directly applying an RF power to the shower head. A gas supply unit(100) has first and second precursor supply sources(110,120), a purge gas supply source(130), an inert gas supply source(140), and plural valves for adjusting flow rate of each gas. A shower head(200) has first and second precursor supply pipes, and mixture spraying holes for spraying first and second precursors, a purge gas and an inert gas into a reaction chamber(1). A power applying unit is positioned at an outside of the shower head. An exhaust unit(400) has an exhaust pump.
摘要翻译：提供一种使用气体分离型喷头的等离子体原子层沉积装置及其方法，以通过直接向喷头施加RF功率来最小化等离子体的损失。气体供给单元（100）具有第一和第二前体供给源（110,120），净化气体供给源（130），惰性气体供给源（140）以及用于调整各气体的流量的多个阀。喷头（200）具有第一和第二前体供应管，以及用于将第一和第二前体，净化气体和惰性气体喷射到反应室（1）中的混合物喷射孔。电力施加单元位于淋浴头的外部。排气单元（400）具有排气泵。

7. 发明公开

KR1020070067913A 대기압 화학기상증착 장치를 이용하여 나노 갭을 채우는이산화규소 절연막 증착 방법 失效
标题翻译：使用APCVD装置沉积NIOO GAP2绝缘膜的方法
公开(公告)号：KR1020070067913A
公开(公告)日：2007-06-29
申请号：KR1020050129436
申请日：2005-12-26
申请人： 주식회사 원익홀딩스
发明人： 김호식 , 장요철 , 배근학 , 주광술 , 김종호 , 고동선
IPC分类号： H01L21/762 , H01L21/316 , B82Y40/00
摘要： A method for depositing a silicon dioxide insulation layer for filling a nano gap using an APCVD apparatus is provided to form a silicon dioxide insulation layer having excellent step coverage and low dependency upon an underlying layer by uniformly filling a nano gap in an STI region of a semiconductor device such that the nano gap has a size not greater than 100 nm and a high aspect ration not lower than 6:1. A wafer is preheated to be placed on an elevator susceptor by vacuum. An SiO2 layer is formed as an underlying layer in a gap in an STI region between shallow transistors of the wafer. Process gas including nitrogen gas heated to a predetermined temperature, TEOS gas mixed with the nitrogen gas and ozone gas mixed with oxygen gas is distributed from n(n>=1) distribution heads among N(N>=2) distribution heads to fill a gap of the STI region at a predetermined speed and at a process pressure of 600~800 torr(S420). The process gas is distributed from the residual m(m>=1,m=N-n) heads among the N distribution heads to deposit an SiO2 insulation layer in the STI region at a more rapid speed than that of the SiO2 insulation layer and at a process pressure of 600~800 torr(S430).
摘要翻译：提供了一种使用APCVD装置沉积用于填充纳米间隙的二氧化硅绝缘层的方法，以通过均匀填充纳米间隙中的纳米间隙来形成二氧化硅绝缘层，其具有优异的阶梯覆盖和对下层的依赖性低半导体器件，使得纳米间隙具有不大于100nm的尺寸和不高于6:1的高纵横比。预热晶片以通过真空放置在电梯座上。在晶片的浅晶体管之间的STI区域的间隙中形成SiO 2层作为下层。包括加热至预定温度的氮气的工艺气体，与氮气混合的TEOS气体和与氧气混合的臭氧气体从N（N> = 1）个分配头分配在N（N> = 2）个分配头中，以填充 STI区域以预定速度和处理压力为600〜800托（S420）的间隙。处理气体从N个分配头中的残留m（m> = 1，m = Nn）头分布，以比SiO 2绝缘层更快的速度在STI区域中沉积SiO 2绝缘层，工艺压力600〜800乇（S430）。

8. 发明授权

KR100702063B1 3개의 세정 소스 배출 포트가 형성된 도파관을 구비하는 ＣＶＤ 장비의 원격 플라즈마 세정 시스템 有权
标题翻译：具有波导的CVD装置的远程等离子体清洁系统形成三个清洁源输出端口
公开(公告)号：KR100702063B1
公开(公告)日：2007-03-30
申请号：KR1020050071182
申请日：2005-08-04
申请人： 주식회사 원익홀딩스
发明人： 김호식 , 배근학 , 장요철
IPC分类号： H01L21/205 , H01L21/02
摘要： 본 발명은 반도체 제조 장치의 세정 시스템에 관한 것으로, 복수개의 세정 소스 배출 포트가 형성된 도파관을 구비하고, 외부에 플라즈마 소스를 설치하여 라디칼을 공급하고, 고압이면서 다량의 가스를 사용하여 안전한 고밀도 플라즈마를 발생시켜 CVD 공정 챔버를 클리닝하는 원격 플라즈마 소스 공급 장치를 가지고 있으며, 챔버 내부 벽에 여러 방향으로 세정 소스를 공급하는 것을 특징으로 한다.
본 발명에 따른 원격 플라즈마 세정 시스템은 내부 파트 손상과 입자를 줄일 수 있으며, 챔버벽과 샤워헤드에 최적의 세정 효과를 얻을 수 있으며, 경제적인 관점에서 세정 가스를 줄일 수 있고 세정 시간을 최대한 줄여 장비의 파트 수명을 연장시킬 수 있는 장점이 있다.
세정 시스템 , 반도체 제조 장치, 원격 플라즈마 세정 시스템

9. 发明授权

KR100687780B1 대기압 화학기상증착 장치를 이용하여 고 종횡비의 나노 갭을 채우는 ＢＰＳＧ 절연막 증착 방법 失效
标题翻译： 대기압학학기상증착장치를이용하여고종횡비의나노을을채우는B BPSG절연막증착방
公开(公告)号：KR100687780B1
公开(公告)日：2007-02-27
申请号：KR1020060035117
申请日：2006-04-18
申请人： 주식회사 원익홀딩스
发明人： 김호식 , 장요철 , 배근학 , 주광술 , 김종호 , 고동선
IPC分类号： H01L21/205 , H01L21/31
摘要： A method for depositing a borophosphosilicate glass insulator film filling a nano gap is provided to prevent diffusion of a doping source while having a good step coverage. A diffusion preventing layer is formed on a wafer(S410), and a process gas containing a tetraethoxysilane gas mixed with nitrogen gas and ozone gas mixed with a doping gas and oxygen gas is distributed at a distribution head to form borophosphosilicate glass on the diffusion preventing layer at a certain speed(S420). The process gas is distributed at the distribution head to form borophosphosilicate glass on the borophosphosilicate glass at a speed faster than the above step(S430).
摘要翻译：提供一种用于沉积填充纳米间隙的硼磷硅酸盐玻璃绝缘体膜的方法，以防止掺杂源的扩散，同时具有良好的阶梯覆盖。在晶片上形成扩散防止层（S410），并将包含混合有氮气的四乙氧基硅烷气体和混合有掺杂气体和氧气的臭氧气体的处理气体分布在分配头处以形成硼磷硅酸盐玻璃以防止扩散以特定速度层（S420）。处理气体在分配头处分布，以比上述步骤（S430）更快的速度在硼磷硅酸盐玻璃上形成硼磷硅酸盐玻璃。

10. 发明公开

KR1020100011022A 고유전막을 형성하는 방법 및 이를 이용한 반도체 커패시터제조 방법 失效
标题翻译：形成高介电常数层的方法及使用其制造半导体电容器的方法
公开(公告)号：KR1020100011022A
公开(公告)日：2010-02-03
申请号：KR1020080072062
申请日：2008-07-24
申请人： 주식회사 원익홀딩스
发明人： 배근학 , 김경수 , 박소연 , 김형영
IPC分类号： H01L27/105 , H01L21/205
CPC分类号： H01L21/02332 , H01L21/0234 , H01L28/40 , H01L28/60
摘要： PURPOSE: A method for forming a high dielectric constant layer and a method for fabricating a semiconductor capacitor using the same are provided to improve the interface by prevent thermal diffusion of material used for lower film through plasma ion reaction. CONSTITUTION: A dielectric layer(520) consisting of the metal oxide is deposited on a substrate to which the gas is supplied through shower head. The nitrogen plasma is generated inside the shower head and dielectric layer is nitrified while keeping the substrate in the reaction chamber. The nitrogen plasma and inert gas are not mixed in the shower head and is respectively dispersed. The dispersed nitrogen plasma the and inert gas are sprayed within the reaction chamber. The dispersed nitrogen plasma the and inert gas are mixed before being sprayed.
摘要翻译：目的：提供一种形成高介电常数层的方法和使用其制造半导体电容器的方法，以通过防止通过等离子体离子反应使用于下膜的材料的热扩散来改善界面。构成：由金属氧化物构成的电介质层（520）沉积在通过喷头供给气体的基板上。在喷头内部产生氮等离子体，并且在将基板保持在反应室中的同时将电介质层硝化。氮等离子体和惰性气体在喷淋头中不混合，分别分散。分散的氮等离子体和惰性气体在反应室内喷雾。分散的氮等离子体和惰性气体在喷射之前混合。

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