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    • 5. 发明公开
    • 씨엔씨의 치수 보정 장치 및 방법
    • 数控机床尺寸校正装置及其方法
    • KR1020130033236A
    • 2013-04-03
    • KR1020110097200
    • 2011-09-26
    • 주식회사 심텍홀딩스
    • 정창보박상영백승건탁재성신재긍강병필황세명오춘환
    • B23Q15/22B23Q15/14B23Q15/12B23Q17/09
    • PURPOSE: A device for correcting a dimension of computerized numerical control and a method thereof are provided to reduce processing defects due to human error by correcting a dimension by automatically reflecting a value to be converted through an automation tool in the process of correcting a dimension of a router process program. CONSTITUTION: A device for correcting a dimension of CNC(Computerized Numerical Control) comprises an aberrometer(1), a tool(2) for correcting a dimension, and a CNC processing unit(4). The aberrometer measures errors of a processing material. The tool for correcting a dimension extracts correction items through product structure analysis of the processing material. Final dimension correction data on the correction items of the processing material is generated and is output based on the error data. The CNC processing unit processes the processing material depending on the final dimension correction data. [Reference numerals] (1) Aberrometer; (2) Dimension correcting tool; (21) Correction item extracting unit; (22) Limit setting unit; (23) Numerical correcting unit; (3) Database; (4) CNC processing unit; (AA) X,Y error data; (BB) Final data output; (CC) Past error correction data;
    • 目的:提供一种用于校正计算机化数字控制的尺寸的装置及其方法,以通过在校正维度的过程中自动反映要通过自动化工具转换的值来校正尺寸来减少由于人为错误引起的加工缺陷 路由器处理程序。 构成:用于校正CNC(计算机数字控制)的尺寸的装置包括像差计(1),用于校正尺寸的工具(2)和CNC处理单元(4)。 像差仪测量加工材料的误差。 用于校正尺寸的工具通过处理材料的产品结构分析提取校正项目。 生成关于处理材料的修正项目的最终尺寸校正数据,并根据误差数据输出。 CNC处理单元根据最终尺寸校正数据来处理加工材料。 (附图标记)(1)气压计; (2)尺寸校正工具; (21)校正项提取单元; (22)限位设定单位; (23)数值校正单元; (3)数据库; (4)CNC加工单元; (AA)X,Y误差数据; (BB)最终数据输出; (CC)过去纠错数据;
    • 6. 发明授权
    • 단층 기판의 제조방법
    • 单层基板的制造方法
    • KR101234759B1
    • 2013-02-19
    • KR1020110098481
    • 2011-09-28
    • 주식회사 심텍홀딩스
    • 장은주유문상정창보오춘환
    • H05K3/46H05K1/18
    • PURPOSE: A manufacturing method of a single layer substrate is provided to improve the productivity by manufacturing the same substrates in the upper part and the lower part in one process using a dummy substrate. CONSTITUTION: A dummy substrate having a first copper electroplating layer and carrier copper layer formed in are prepared. A lower copper-nickel and upper copper laminate including a lower copper, nickel and upper copper(43) on the carrier copper layer is formed. A prepreg layer(5) in formed on the lower copper, nickel and upper copper laminate. A second copper plating(8) is formed on the nickel and upper copper. A solder resist(10) including a pad unit(9) is formed on the prepreg layer. A gold plating(11) is formed by etching the solder resist on the pad unit.
    • 目的:提供单层基板的制造方法,以通过使用虚设基板在一个工序中通过在上部和下部中制造相同的基板来提高生产率。 构成:制备具有第一铜电镀层和形成载体铜层的虚设基板。 形成在载体铜层上包含下铜,镍和上铜(43)的下铜 - 镍和上铜层压体。 在下铜,镍和上铜层压板上形成的预浸料层(5)。 在镍和上铜上形成第二镀铜(8)。 在预浸料层上形成包括垫单元(9)的阻焊剂(10)。 通过蚀刻焊盘单元上的阻焊剂形成镀金(11)。
    • 8. 发明公开
    • 반도체 패키지 및 그 제조방법
    • 电路板,半导体封装及其制造方法
    • KR1020120108279A
    • 2012-10-05
    • KR1020110025955
    • 2011-03-23
    • 주식회사 심텍홀딩스
    • 심재철차상석정창보오춘환
    • H05K3/34H01L23/48
    • H01L2224/10
    • PURPOSE: A semiconductor package and a manufacturing method thereof are provided to increase junction area by forming a protrusion on a bump pad. CONSTITUTION: A ball land(108) is formed on the lower part of a through hole passing through an insulating base layer(110). A bump pad(116) is composed of a pillar burying the through hole and a protrusion protruded from the upper side of the insulating base layer. A conductive layer is laminated on the lower side of the insulating base layer. A releasing layer is laminated on the lower side of the conductive layer. A carrier substrate is laminated on the lower side of the releasing layer. A conductive protrusion(124,136) covers the protrusion of the bump pad. The insulating base layer includes prepreg, epoxy-based resin and RCC.
    • 目的:提供半导体封装及其制造方法,以通过在凸块焊盘上形成突起来增加结面积。 构成:穿过绝缘基底层(110)的通孔的下部形成有球面(108)。 凸块(116)由埋入通孔的支柱和从绝缘基层的上侧突出的突起构成。 导电层层叠在基底绝缘层的下侧。 在导电层的下侧层叠剥离层。 载体基板层叠在释放层的下侧。 导电凸起(124,136)覆盖凸块的凸起。 绝缘基层包括预浸料,环氧树脂和RCC。