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    • 2. 发明公开
    • 펄스 에칭 냉각
    • 脉冲蚀刻冷却
    • KR1020080051139A
    • 2008-06-10
    • KR1020087006919
    • 2006-08-23
    • 잭틱스 인코포레이티드
    • 레보이츠,카일,에스.스프링거,데이비드,엘.
    • H01L21/306H01L21/00
    • H01L21/3065H01L21/32135H01L21/67109
    • In an apparatus and method of vapor etching, a sample (S) to be etched is located in a main chamber (107) from which the atmosphere inside is evacuated. Etching gas is input into the main chamber (107) for a first period of time. Thereafter, the etching gas is evacuated from the main chamber (107) and cooling/purging gas is input into the main chamber for a second interval of time. Thereafter, the cooling/purging gas is evacuated from the main chamber (107). Desirably, the steps of inputting the etching gas into the main chamber (107) for the first period of time, evacuating the etching gas from the main chamber, inputting the cooling/purging gas into the main chamber (107) for the second period of time, and evacuating the cooling/purging gas from the main chamber are repeated until samples have been etched to a desired extent.
    • 在蒸气蚀刻的装置和方法中,待蚀刻的样品(S)位于主室(107)中,从其中抽空空气。 蚀刻气体在第一时间段内输入主室(107)。 之后,从主室107排出蚀刻气体,第二时间将冷却/净化气体输入主室。 之后,从主室(107)排出冷却/净化气体。 期望的是,将蚀刻气体输入到主室(107)中一段时间​​的步骤,从主室排出蚀刻气体,将冷却/净化气体输入到主室(107)的第二时段 重复时间,并从主室排出冷却/吹扫气体,直到样品已经被蚀刻到期望的程度。