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    • 6. 发明公开
    • 필름 벌크 음향 공진기 필터를 제조하는 방법
    • 制造膜片式声学谐振滤波器的方法
    • KR1020040014200A
    • 2004-02-14
    • KR1020030046724
    • 2003-07-10
    • 인텔 코포레이션
    • 왕리-펭바르-사데얄라오발루리헤크존마큉트란콴탈랄예브스키알렉산더긴스버그얄
    • H03H9/24
    • H03H9/564H03H3/02Y10T29/42
    • PURPOSE: A method for manufacturing an FBAR(Film Bulk Acoustic Resonator) filter is provided to simplify the process and to miniaturize the size of the FBAR. CONSTITUTION: An FBAR filter(10) includes a plurality of film bulk acoustic resonators(38a-38e) having top electrodes(36). The FBARs(38c,38a) are shunt FBARs while the FBAR(38b) is a series FBAR coupled to the FBAR(38a) via an extension(36f) of the upper electrodes(36b,36e). An intermediate layer(35) in each FBAR includes a piezoelectric film. The same layer of piezoelectric film is positioned underneath each of the upper electrodes of the FBARs. Also, the intermediate layer(35) includes an interlayer dielectric that fills the area between FBARs while the region under each upper electrode is a piezoelectric film.
    • 目的:提供一种制造FBAR(Film Bulk Acoustic Resonator)滤光片的方法,以简化工艺过程并使FBAR的尺寸小型化。 构成:FBAR滤波器(10)包括具有顶部电极(36)的多个薄膜体声波谐振器(38a-38e)。 FBAR(38c,38a)是分流FBAR,而FBAR(38b)是通过上电极(36b,36e)的延伸部(36f)耦合到FBAR(38a)的串联FBAR。 每个FBAR中的中间层(35)包括压电膜。 相同的压电膜层位于FBAR的每个上电极的下方。 此外,中间层(35)包括填充FBAR之间的区域的层间电介质,而每个上电极的区域是压电膜。