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    • 4. 发明公开
    • 튜브형 단결정 실리콘 나노 구조물 및 그 제조방법
    • 单晶硅管结构及其制造方法
    • KR1020130037431A
    • 2013-04-16
    • KR1020110101830
    • 2011-10-06
    • 연세대학교 산학협력단
    • 김종백정학균나형주권대성김민욱강정진
    • B82B3/00B82B1/00B82Y40/00
    • B82B3/0038B82Y40/00H01L31/035218
    • PURPOSE: A tube type single-crystal silicon nanostructure is provided to effectively manufacture tube type nanostructure which has large surface ratio per volume and superhydrophobic property through simple processing such as metal deposition, rapid thermal processing, and dry etch (RIE). CONSTITUTION: A manufacturing method of tube type single-crystal silicon nanostructure comprises these following steps. (a) Deposit metallic foil(120) on a silicon wafer using equipment of semiconductor process. (b) Form a nano dot(120a) of nano size through thermal cohesion by rapidly heating deposited metallic foil. And (c) form nanostructures of tube type column by performing dry etching process by using metal nanodot as an etching mask. In the step (c), a re-deposited attachment domain (120b) is formed around a metal nanodot into a ring shape. An undercut is generated in a silicon part exposed between the attachment domain and the lower portion of metal nanodot.
    • 目的:提供管式单晶硅纳米结构,通过金属沉积,快速热处理和干蚀刻(RIE)等简单加工,有效地制造出具有大体积表面积比和超疏水性的​​管型纳米结构。 构成:管式单晶硅纳米结构的制造方法包括以下步骤。 (a)使用半导体工艺的设备将金属箔(120)沉积在硅晶片上。 (b)通过快速加热沉积的金属箔,通过热粘合形成纳米尺寸的纳米点(120a)。 和(c)通过使用金属纳米点作为蚀刻掩模,通过干法蚀刻工艺形成管型柱的纳米结构。 在步骤(c)中,在金属纳米点周围形成再沉积的附着区域(120b)成环形。 在连接结构域和金属纳米点的下部之间露出的硅部分产生底切。