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2. 发明授权

KR101742539B1 그릴빔 설치가 용이한 클린룸 골조 有权
公开(公告)号：KR101742539B1
公开(公告)日：2017-06-01
申请号：KR1020160157954
申请日：2016-11-25
申请人： 에스케이하이닉스 주식회사 , 에스케이건설 주식회사 , 주식회사 브이원 , (주)연우건축구조기술사사무소 , 주식회사 센코어테크
发明人： 김성한 , 김우영 , 이광옥 , 문춘수 , 유수철 , 서상영 , 정우현 , 김정엽 , 신현호 , 이형교 , 주재형 , 여문용 , 김기석 , 표경창 , 이강수 , 최영호 , 배진영 , 장복덕 , 박재훈 , 박해동 , 류국현 , 최일섭 , 최석동 , 이창남
IPC分类号： E04B1/30 , E04B5/04 , E04C3/36
CPC分类号： E04B1/30 , E04B5/04 , E04C3/36
摘要： 본발명은클린룸골조시공시간단한구조로그릴빔의시공을용이하게할 수있으면서그릴빔의안정적인지지가가능하고수평력을잘 전달할수 있는그릴빔설치가용이한클린룸골조에대한것이다. 본발명그릴빔설치가용이한클린룸골조는일정간격이격되도록배치되는콘크리트부재인복수의주기둥; 상기주기둥의사이에배치되는것으로주기둥보다길이가짧은샛기둥; 및상기주기둥들의측면사이에설치되어샛기둥에의해지지되는것으로복수의가로빔과세로빔이서로교차하여구성되는복수의그릴빔; 으로구성되는것으로, 상기복수의그릴빔중 주기둥의측면에결합되는그릴빔은모서리가주기둥의측면에결합되도록모서리에상기주기둥의일측모서리가삽입되도록밀착되는결합부가모따기되어형성되며, 상기주기둥의측면에는상기그릴빔의하부를지지하는철골브래킷이돌출형성되는것을특징으로한다.

3. 发明授权

KR100363104B1 강유전체 기억소자의 셀 구조 失效
标题翻译： 강유전체기억소자의셀구조
公开(公告)号：KR100363104B1
公开(公告)日：2003-02-19
申请号：KR1019980045566
申请日：1998-10-28
申请人： 에스케이하이닉스 주식회사
发明人： 김덕주 , 박재훈
IPC分类号： G11C11/22
CPC分类号： G11C11/22
摘要： The present invention relates to a cell structure of a ferroelectric memory device which can prevent a data loss and improve a data read/write speed, including: first and second MOS transistors connected in series between two bit lines, and performing a switching operation according to an enable state of a word line; a third MOS transistor connected between the first and second MOS transistors and a plate line, and engaged with the first and second MOS transistors according to an enable state the word line; and first and second ferroelectric capacitors connected between the first MOS transistor and the third MOS transistor, and between the second MOS transistor and the third MOS transistor, respectively, and storing data in accordance with a switching state of the first to third MOS transistors. Accordingly, the present invention can carry out a high-speed data sensing operation and a restoring operation, and can prevent the data from being lost, which results in improved speed and reliability.
摘要翻译：本发明涉及可防止数据丢失并提高数据读写速度的铁电存储器件的单元结构，包括：串联连接在两条位线之间的第一和第二MOS晶体管，并根据字线的使能状态; 第三MOS晶体管，连接在第一MOS晶体管和第二MOS晶体管与板线之间，并且根据字线的使能状态与第一MOS晶体管和第二MOS晶体管接合; 以及分别连接在第一MOS晶体管和第三MOS晶体管之间以及第二MOS晶体管和第三MOS晶体管之间并根据第一到第三MOS晶体管的开关状态存储数据的第一和第二铁电电容器。因此，本发明可以执行高速数据读出操作和恢复操作，并且可以防止数据丢失，这导致提高的速度和可靠性。

4. 发明公开

KR1020000027611A 강유전체 기억소자의 셀 구조 失效
标题翻译：电解记忆体细胞结构
公开(公告)号：KR1020000027611A
公开(公告)日：2000-05-15
申请号：KR1019980045566
申请日：1998-10-28
申请人： 에스케이하이닉스 주식회사
发明人： 김덕주 , 박재훈
IPC分类号： G11C11/22
CPC分类号： G11C11/22
摘要： PURPOSE: A cell structure for ferroelectric memory cell is provided to improve a velocity and a reliability by performing a high data sensing operation and a re-storing operation to prevent a data loss. CONSTITUTION: First and second MOS transistors(N0,N1) are interconnected in serial between two bit lines(BL0,BL1). Gates of first and second MOS transistor(N0,N1) are connected to a word line(WL). A third MOS transistor(N3) is connected between first and second MOS transistors(N0,N1) and plate lines(PL). Gate of the third MOS transistor(N3) is connected to the word line(WL). A source of the first MOS transistor(N0) is connected to a upper electrode of a first ferroelectric capacitor(X0). A source of the second MOS transistor(N1) is connected to a upper electrode of a second ferroelectric capacitor(X1). Lower electrodes of the first ferroelectric capacitor(X0) and the second ferroelectric capacitor(X1) are interconnected and connected to a drain of the third MOS transistor(N3). A source of the third MOS transistor(N3) is connected to the plate line(PL).
摘要翻译：目的：提供铁电存储器单元的单元结构，通过执行高数据检测操作和重新存储操作以防止数据丢失来提高速度和可靠性。构成：第一和第二MOS晶体管（N0，N1）串联连接在两个位线（BL0，BL1）之间。第一和第二MOS晶体管（N0，N1）的栅极连接到字线（WL）。第三MOS晶体管（N3）连接在第一和第二MOS晶体管（N0，N1）和板极线（PL）之间。第三MOS晶体管（N3）的栅极连接到字线（WL）。第一MOS晶体管（N0）的源极连接到第一铁电电容器（X0）的上电极。第二MOS晶体管（N1）的源极连接到第二铁电电容器（X1）的上电极。第一铁电电容器（X0）和第二铁电电容器（X1）的下电极互连并连接到第三MOS晶体管（N3）的漏极。第三MOS晶体管（N3）的源极连接到板线（PL）。

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