会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明授权
    • 잉곳 마운팅 방법
    • 安装方法
    • KR100873263B1
    • 2008-12-11
    • KR1020070092419
    • 2007-09-12
    • 에스케이실트론 주식회사
    • 이경무
    • H01L21/304
    • B28D5/0041
    • The ingot mounting method is provided to shorten effectively the hardening time of the epoxy adhesive by heat-hardening the ingot holder and the ingot. The ingot mounting method comprises as follows. A step is for providing ingot. The first preliminary step(S11) is for binding the slicing beam in which the first adhesive member is coated onto ingot. The second preliminary step(S13) is for binding the work plate in which the second adhesive member is coated onto the slicing beam. The thermal curing step(S15) is for heat-hardening the second preliminary body. The thermal curing step comprises the heat-up step and the cooling step. The heat-up step heats gradually the second preliminary body in the temperature range of a step type. The cooling step cools gradually the second preliminary body in the temperature range of a step type.
    • 提供铸锭安装方法,通过对锭锭和锭进行加热硬化,有效缩短环氧树脂粘合剂的硬化时间。 铸块安装方法如下。 一步是提供锭子。 第一预备步骤(S11)用于将其中涂覆有第一粘合剂构件的切割梁粘合到锭上。 第二预备步骤(S13)用于将其中涂覆有第二粘合剂构件的工作板结合到切割梁上。 热固化步骤(S15)用于对第二预备体进行加热硬化。 热固化步骤包括加热步骤和冷却步骤。 加热步骤在步骤类型的温度范围内逐渐加热第二预备体。 冷却步骤在步骤类型的温度范围内逐渐冷却第二预备体。
    • 5. 发明公开
    • 잉곳 절단 방법
    • 切割的方法
    • KR1020120090669A
    • 2012-08-17
    • KR1020110011217
    • 2011-02-08
    • 에스케이실트론 주식회사
    • 이경무정환연윤용균
    • B28D5/04B24B27/06H01L21/304
    • B28D5/045B28D5/007
    • PURPOSE: An ingot cutting method is provided to attach an ingot to an attachment block and then cut the ingot, thereby minimizing the cut of a wire. CONSTITUTION: An ingot cutting method comprises the steps of: attaching one side of an ingot(20) having a hexahedral shape to an attachment block, transferring separated wires(10) at high speed, lowering the ingot attached to the attachment block to the wires, and cutting the ingot with the wires into wafers. When attaching the ingot to the attachment block, the length of an attachment side(21) of the ingot is shorter than the length of an opposed side(22) opposite to the attachment block.
    • 目的:提供一种铸锭切割方法,将锭子连接到附接块上,然后切割锭块,从而使钢丝切割最小化。 构成:锭切割方法包括以下步骤:将具有六面体形状的锭(20)的一侧连接到附接块,高速传送分离的线(10),将附接到附接块的锭子下降到线 ,并将钢丝切割成晶圆。 当将锭附接到附接块时,锭的附接侧(21)的长度短于与附接块相对的相对侧(22)的长度。
    • 6. 发明公开
    • 반도체 웨이퍼 엣지 연마 휠
    • 用于抛光边缘抛光轮的部件
    • KR1020080062660A
    • 2008-07-03
    • KR1020060138709
    • 2006-12-29
    • 에스케이실트론 주식회사
    • 이경무김승모김용덕
    • H01L21/304
    • A wheel used for polishing an edge of a semiconductor wafer is provided to improve productivity of an edge polishing process by simultaneously performing a rough grinding, a finish grinding, and an edge polishing process of a truing wafer. A body wheel has a through-hole into which a rotational shaft is inserted. A polishing groove assembly(40) is firmly coupled along a circumference of the body wheel. The polishing groove assembly includes a truing groove(41), metal bond grooves(42,43), and a resin bond groove(44). The polishing groove assembly has an arrangement in the order of the truing groove, the metal bond grooves, and the resin bond groove, and vice-versa. A grain size of the polishing groove assembly is increased in the order of the truing groove, the metal bond grooves, and the resin bond groove. The number of grooves formed on surfaces of the metal bond grooves are less than the number of grooves formed on a surface of the resin bond groove.
    • 提供了用于抛光半导体晶片的边缘的轮,以通过同时进行修整晶片的粗磨,精磨和边缘抛光工艺来提高边缘抛光工艺的生产率。 主体轮具有插入旋转轴的通孔。 抛光槽组件(40)沿主体轮的圆周牢固地联接。 抛光槽组件包括修整槽(41),金属接合槽(42,43)和树脂接合槽(44)。 抛光槽组件具有修整槽,金属接合槽和树脂接合槽的顺序的布置,反之亦然。 抛光槽组件的晶粒尺寸按照修整槽,金属接合槽和树脂接合槽的顺序增加。 形成在金属接合槽的表面上的槽的数量小于在树脂接合槽的表面上形成的槽的数量。
    • 8. 发明公开
    • DSG 장치의 지지구조
    • 双面研磨装置的支撑结构
    • KR1020090084039A
    • 2009-08-05
    • KR1020080009975
    • 2008-01-31
    • 에스케이실트론 주식회사
    • 이경무정환연장준영
    • H01L21/304
    • B24B7/17B24B7/228
    • The supporting structure of DSG(Double Side Grinding) apparatus is provided to improve the surface flatness of wafer by removing the big deformity like the saw mark on front and back sides of wafer. The first supporting member(51) contacts with floor. The second supporting member(52) is installed at the upper side of the first supporting member. The third supporting member(53) is installed at the upper side of the second supporting member. The fourth supporting member(54) is installed at the upper side of the third supporting member. The thickness of second and forth supporting members is smaller than the thickness of first and third supporting members. The first and third supporting members are made of metal. The second and forth supporting members are made of the dust proof rubber.
    • 提供DSG(双面研磨)装置的支撑结构,通过去除像晶片正面和背面上的锯痕那样的大的变形,提高晶片的表面平整度。 第一支撑构件(51)与地板接触。 第二支撑构件(52)安装在第一支撑构件的上侧。 第三支撑构件(53)安装在第二支撑构件的上侧。 第四支撑构件(54)安装在第三支撑构件的上侧。 第二和第四支撑构件的厚度小于第一和第三支撑构件的厚度。 第一和第三支撑构件由金属制成。 第二和第四支撑构件由防尘橡胶制成。