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1. 发明授权

KR100456705B1 반도체 장치의 제조 공정 有权
标题翻译： 반도체장치의제조공정
公开(公告)号：KR100456705B1
公开(公告)日：2004-11-10
申请号：KR1020000051024
申请日：2000-08-31
申请人： 알카텔-루센트 유에스에이 인코포레이티드
发明人： 페이치엔-싱 , 리우천-팅
IPC分类号： H01L21/76
CPC分类号： H01L21/76297 , H01L21/76294
摘要： A process for fabricating a silicon-on-insulator integrated circuit in conjunction with a process for shallow trench isolation is disclosed. The shallow trench isolation is performed to define active regions in the silicon substrate. The active regions are electrically isolated from each other by regions of silicon dioxide formed in the substrate by the shallow trench isolation process. The height of the silicon dioxide regions above the substrate surface defines the combined thickness of the islands of silicon dioxide and the silicon formed over the islands of silicon dioxide. A mask is then formed on the silicon substrate with the regions of silicon dioxide formed therein. The mask defines the regions on the silicon substrate surface on which the islands of silicon dioxide are to be formed. The silicon dioxide islands are formed with the mask in place, and the mask is subsequently removed. Single crystal silicon is formed epitaxially on the structure. This is followed by the deposition of amorphous silicon and recrystallization to form a structure that has islands of insulating silicon dioxide formed in the silicon substrate and below the substrate surface.
摘要翻译：公开了一种用于制造绝缘体上硅集成电路以及用于浅沟槽隔离的工艺的工艺。执行浅沟槽隔离以在硅衬底中限定有源区。通过浅沟槽隔离工艺，在衬底中形成的二氧化硅区域使有源区彼此电隔离。衬底表面上方的二氧化硅区域的高度限定了二氧化硅岛和在二氧化硅岛上形成的硅的组合厚度。然后在其上形成有二氧化硅区域的硅衬底上形成掩模。掩模限定了硅衬底表面上将要在其上形成二氧化硅岛的区域。将二氧化硅岛与掩模一起形成，随后去除掩模。单晶硅在结构上外延形成。随后是非晶硅的沉积和再结晶以形成具有在硅衬底中和衬底表面下方形成的绝缘二氧化硅岛的结构。＆lt;图像＆GT;

2. 发明公开

KR1020010030187A 반도체 장치의 제조 공정 有权
标题翻译：制造半导体衬底中形成的绝缘材料区域的半导体器件的制造方法
公开(公告)号：KR1020010030187A
公开(公告)日：2001-04-16
申请号：KR1020000051024
申请日：2000-08-31
申请人： 알카텔-루센트 유에스에이 인코포레이티드
发明人： 페이치엔-싱 , 리우천-팅
IPC分类号： H01L21/76
CPC分类号： H01L21/76297 , H01L21/76294
摘要： PURPOSE: A Process of making a semiconductor device having regions of insulating material formed in a semiconductor substrate is provided to form a structure that has islands of insulating silicon dioxide formed in the silicon substrate and below the substrate surface. CONSTITUTION: A height of a silicon dioxide region on a substrate surface defines the coupled thickness of the island of silicon dioxide and a silicon formed thereon. The silicon dioxide region which is formed allows formation of a mask on a silicon substrate. The mask demarcates a region on the surface of silicon substrate where the island of silicon dioxide is formed. The silicon dioxide island is formed at an appropriate place with a mask which is removed later. Single crystal silicon is formed epitaxially within a structure. Then an amorphous silicon is deposited and re-crystallized, forming a structure where a silicon substrate and the island of insulating silicon dioxide formed under the surface of substrate are provided. Chemical mechanical polishing is one example of a suitable expedient for accomplishing this objective. The resulting structure has silicon dioxide insulating regions(15) that separate active regions(17) in the substrate(10). At least, one active region(17) has silicon dioxide islands(35) formed beneath the single crystalline surface.
摘要翻译：目的：提供一种制造具有形成在半导体衬底中的绝缘材料区域的半导体器件的工艺，以形成在硅衬底中形成的绝缘二氧化硅岛和衬底表面下方的结构。构成：衬底表面上的二氧化硅区域的高度限定二氧化硅岛和其上形成的硅的耦合厚度。形成的二氧化硅区域允许在硅衬底上形成掩模。该掩模划分硅基板的形成有二氧化硅岛的表面上的区域。二氧化硅岛形成在适当的地方，后面要去除掩模。在结构内外延形成单晶硅。然后沉积非晶硅并重结晶，形成硅衬底和形成在衬底表面下方的绝缘二氧化硅岛的结构。化学机械抛光是实现这一目标的合适方案的一个例子。所得到的结构具有分离衬底（10）中的有源区（17）的二氧化硅绝缘区（15）。至少一个有源区（17）在单晶表面下形成有二氧化硅岛（35）。

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