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1. 发明授权

KR101865951B1 레지스트 조성물 및 레지스트 패턴의 제조 방법 有权
公开(公告)号：KR101865951B1
公开(公告)日：2018-06-08
申请号：KR1020120078187
申请日：2012-07-18
申请人： 스미또모 가가꾸 가부시키가이샤
发明人： 이찌까와,고지 , 히라오까,다까시 , 오찌아이,미쯔요시
IPC分类号： G03F7/004 , G03F7/038 , G03F7/26 , G03F7/20
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2041
摘要： 화학식 (I)로표시되는구조단위를갖는수지, 알칼리수용액에불용성또는난용성이지만산의작용에의해알칼리수용액에가용성이되며, 화학식 (I)로표시되는구조단위를포함하지않는수지, 및화학식 (II)로표시되는산발생제를갖는레지스트조성물을제공한다.(식중, R, A, R, Q및 Q, L, 환 W, R및 R, n 및 Z는본 명세서에정의되어있음)

2. 发明授权

KR101897834B1 레지스트 조성물 및 레지스트 패턴의 제조 방법 有权
公开(公告)号：KR101897834B1
公开(公告)日：2018-09-12
申请号：KR1020120078194
申请日：2012-07-18
申请人： 스미또모 가가꾸 가부시키가이샤
发明人： 이찌까와,고지 , 히라오까,다까시 , 오찌아이,미쯔요시
IPC分类号： G03F7/004 , G03F7/038 , G03F7/26 , G03F7/20
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2041
摘要： 본발명은화학식 (I)로표시되는구조단위를갖는수지, 알칼리수용액에불용성또는난용성이지만산의작용에의해알칼리수용액에가용성이되며화학식 (I)로표시되는구조단위를포함하지않는수지, 및화학식 (II)로표시되는산발생제를갖는레지스트조성물에관한것이다.(식중, R, A, A, A, X, Q, Q, L, 환 W, R및 R, n 및 Z는명세서에정의되어있음)

3. 发明公开

KR1020130010855A 레지스트 조성물 및 레지스트 패턴의 제조 방법 审中-实审
标题翻译：耐蚀组合物及其制造方法
公开(公告)号：KR1020130010855A
公开(公告)日：2013-01-29
申请号：KR1020120078194
申请日：2012-07-18
申请人： 스미또모 가가꾸 가부시키가이샤
发明人： 이찌까와,고지 , 히라오까,다까시 , 오찌아이,미쯔요시
IPC分类号： G03F7/004 , G03F7/038 , G03F7/26 , G03F7/20
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2041 , G03F7/004 , G03F7/0382 , G03F7/2002 , G03F7/26
摘要： PURPOSE: A resist composition is provided to be used for micro-processing a semiconductor by obtaining a sufficiently deep focus margin(DOF) with little defects. CONSTITUTION: A resist composition comprises a resin which has a structure unit indicated in chemical formula 1 and comprises an insoluble or poorly soluble into an alkali water solution but can be soluble into the alkali water solution by acid, and comprises a resin which does not comprises a resin indicated in chemical formula 1, and an acid-generator which is indicated in chemical formula 2. In chemical formula 1, R1 is hydrogen or a methyl group, A1 is a C1-C6 alkanediyl group, A13 is a C1-C18 divalent aliphatic hydrocarbon group which can have one or more halogen atoms. X12 is *-CO-O- or *-O-CO-, where * is a bond to A13, and A14 is a C1-C17 aliphatic hydrocarbon group which can have one or more halogen atoms. In chemical formula 2, each of Q1 and Q2 is independently a fluorine atom or a C1-C6 perfluoroalkyl, and L1 is a C1-C7 divalent saturated hydrocarbon group in which one or more -CH2- can be substituted by -O- or -CO-, and a ring Wb1 is a C2-C36 heterocycle.
摘要翻译：目的：提供一种抗蚀剂组合物，用于通过获得足够深的聚焦余量（DOF），几乎没有缺陷来用于微加工半导体。构成：抗蚀剂组合物包含具有化学式1所示结构单元的树脂，其包含不溶于或难溶于碱水溶液但可通过酸溶于碱水溶液中的树脂，并且包含不包含化学式1表示的树脂和化学式2表示的酸发生剂。在化学式1中，R1是氢或甲基，A1是C1-C6烷二基，A13是C1-C18二价可以具有一个或多个卤素原子的脂族烃基。 X12是* -CO-O-或* -O-CO-，其中*是与A13的键，A14是可以具有一个或多个卤素原子的C 1 -C 17脂族烃基。在化学式2中，Q1和Q2各自独立地为氟原子或C1-C6全氟烷基，L1为C1-C7二价饱和烃基，其中一个或多个-CH 2 - 可以被-O-或 - CO-，环Wb1是C2-C36杂环。

4. 发明公开

KR1020130010851A 레지스트 조성물 및 레지스트 패턴의 제조 방법 审中-实审
标题翻译：耐蚀组合物及其制造方法
公开(公告)号：KR1020130010851A
公开(公告)日：2013-01-29
申请号：KR1020120078187
申请日：2012-07-18
申请人： 스미또모 가가꾸 가부시키가이샤
发明人： 이찌까와,고지 , 히라오까,다까시 , 오찌아이,미쯔요시
IPC分类号： G03F7/004 , G03F7/038 , G03F7/26 , G03F7/20
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2041 , G03F7/004 , G03F7/0382 , G03F7/2002 , G03F7/26
摘要： PURPOSE: A resist composition is provided to have sufficiently wide focus margin without defects. CONSTITUTION: A resist composition comprises a resin which has a structure unit indicated in chemical formula 1 and comprises an insoluble or poorly soluble into an alkali water solution but can be soluble into the alkali water solution by acid, and comprises a resin which does not comprises a resin indicated in chemical formula 1, and an acid-generator which is indicated in chemical formula 2. In chemical formula 1, R1 is hydrogen or a methyl group, A1 is a C1-C6 alkanediyl group, and R2 is a C1-C10 hydrocarbon group with a fluorine atom. In chemical formula 2, each of Q1 and Q2 is independently a fluorine atom or a C1-C6 perfluoroalkyl, and L1 is a C1-C7 divalent saturated hydrocarbon group in which one or more -CH2- can be substituted by -O- or -CO-, and each of Rf1 and Rf2 is independently fluorine atom or C1-C6 fluorinated unsaturated group.
摘要翻译：目的：提供抗蚀剂组合物以具有足够宽的聚焦余量而没有缺陷。构成：抗蚀剂组合物包含具有化学式1所示结构单元的树脂，其包含不溶于或难溶于碱水溶液但可通过酸溶于碱水溶液中的树脂，并且包含不包含化学式1表示的树脂和化学式2表示的酸发生剂。在化学式1中，R1为氢或甲基，A1为C1-C6烷二基，R2为C1-C10 具有氟原子的烃基。在化学式2中，Q1和Q2各自独立地为氟原子或C1-C6全氟烷基，L1为C1-C7二价饱和烃基，其中一个或多个-CH 2 - 可以被-O-或 - CO-，Rf1和Rf2各自独立地为氟原子或C1-C6氟化不饱和基团。

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