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    • 1. 发明公开
    • DX 타일 및 퓨얼 스트랜드를 이용한 DX 타일의 룰 변경 방법
    • DX改变使用燃料条的DX地层规则的方法和方法
    • KR1020110121488A
    • 2011-11-07
    • KR1020100041096
    • 2010-04-30
    • 한양대학교 에리카산학협력단성균관대학교산학협력단
    • 권영헌박성하김승재신지훈
    • C12Q1/68
    • G06F19/18C12Q1/6869
    • PURPOSE: A method for changing DX tile using DX tile and fuel strand by changing rule applied to the DX tile is provided to enable pattern change. CONSTITUTION: A DX tile comprises a fuel strand binding part and four sticky ends. The fuel strand has the fuel strand binding part and complementary sequence thereof. The rule applied to the DX tile by binding between the fuel strand and the fuel strand binding part. The DX tile binds with the fuel strand in fluid. A method for changing DX tile rule using the fuel strand comprises: a step of binding the fuel strand to the DX tile having a first rule to generate a frame DX tile from DX tile having the first rule(410); and a step of binding an input strand to the frame DX tile(420).
    • 目的:提供使用DX瓦片和燃料链改变DX瓦片的方法,通过改变应用于DX瓦片的规则来实现图案改变。 构成:DX瓦片包括燃料束结合部分和四个粘性末端。 燃料股具有燃料股结合部分及其互补序列。 该规则通过在燃料股线和燃料股线结合部分之间进行绑定而应用于DX瓷砖。 DX瓦与流体中的燃料链结合。 一种用于使用燃料线改变DX瓦片规则的方法包括:将具有第一规则的所述燃料线束绑定到所述DX瓦片的步骤,以从具有所述第一规则(DX)的DX瓦片生成框架DX瓦片; 以及将输入线绑定到框架DX瓦片(420)的步骤。
    • 3. 发明公开
    • 나노 소자의 형성방법
    • 使用具有自组装特性的纳米结构形成纳米器件的方法
    • KR1020100039978A
    • 2010-04-19
    • KR1020080098992
    • 2008-10-09
    • 성균관대학교산학협력단
    • 노용한김경섭정석원김형진박성하
    • B82B3/00H01L21/20B82Y40/00
    • H01L21/32139B81C1/00396B81C2201/0149B81C2201/0198B82Y10/00H01L21/0332H01L29/0665H01L29/0673H01L29/78
    • PURPOSE: A nano device forming method is provided to pattern a substrate in a nano scale without using a light source, to improve the degree of integration of the device while reducing the fabrication cost, and to improve the yield of the device production. CONSTITUTION: A nano device forming method comprises the following steps: forming a self-assembly material layer(23) in a nano scale on a substrate(21) formed with more than one layer; forming a mask layer(25) on the self-assembly material layer; performing a surface processing on the substrate using the mask layer as a mask; and removing the self-assembly material layer. The surface processing is either an etching or an ion inserting. The mask layer contains a substance selected from the group consisting of gold, silver, silicon, silicon oxide, silicon nitride, iron, cadmium selenide, carbon nano tube, bucky ball and grapheme.
    • 目的:提供一种纳米器件形成方法,用于在不使用光源的情况下以纳米尺度对衬底进行图案化,从而提高器件的集成度,同时降低制造成本,并提高器件生产的产量。 构成:纳米器件形成方法包括以下步骤:在形成有多于一层的衬底(21)上形成纳米尺度的自组装材料层(23); 在所述自组装材料层上形成掩模层(25); 使用掩模层作为掩模在基板上进行表面处理; 并移除自组装材料层。 表面处理是蚀刻或离子插入。 掩模层包含选自金,银,硅,氧化硅,氮化硅,铁,硒化镉,碳纳米管,巴基球和图形的物质。