会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明授权
    • 발광 다이오드 및 그 제조방법
    • 发光二极管及其制造方法
    • KR100850667B1
    • 2008-08-07
    • KR1020070049848
    • 2007-05-22
    • 서울바이오시스 주식회사토쿠시마 대학
    • 사카이,시로나오이,요시키
    • H01L33/20H01L21/302
    • H01L33/22H01L33/0095H01L33/44
    • A light emitting diode and a manufacturing method thereof are provided to radiate effectively light from an active layer to an outside by scratching a surface thereof. A compound semiconductor layer including a lower semiconductor layer(120), an active layer(130), and an upper semiconductor layer(140) is formed on a substrate(110). A lower surface of the substrate is scratched by using a polishing agent. In the process for scratching the lower surface of the substrate, a solvent including the polishing agent is prepared within an ultrasonic cleaning unit. The substrate including the compound semiconductor layer is positioned within the ultrasonic cleaning unit. An ultrasonic wave is applied within the ultrasonic cleaning unit to perform a scratching process through the activation of the polishing agent.
    • 提供一种发光二极管及其制造方法,用于通过划伤其表面而有效地将有源层的光辐射到外部。 在衬底(110)上形成包括下半导体层(120),有源层(130)和上半导体层(140)的化合物半导体层。 通过使用抛光剂来刮擦基材的下表面。 在刮擦基板的下表面的过程中,在超声波清洗单元内制备包括抛光剂的溶剂。 包含化合物半导体层的基板位于超声波清洗单元内。 在超声波清洗装置内施加超声波,通过激活抛光剂进行划痕处理。