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1. 发明公开

KR1020060117563A 비환형 유기 폴리올을 이용한 반응형 기공형성제와 이를이용하여 제조된 초저유전막 有权
标题翻译：基于有机非离子聚合物的反应性多孔体和使用其制备的超低介电材料
公开(公告)号：KR1020060117563A
公开(公告)日：2006-11-17
申请号：KR1020050039490
申请日：2005-05-11
申请人： 서강대학교산학협력단
发明人： 이희우 , 문봉진 , 윤도영 , 김현정 , 민성규 , 이태훈 , 안건우
IPC分类号： C07F7/02
CPC分类号： H01L21/76801 , H01L21/02112 , H01L21/02203
摘要： A reactive porogen based on organic noncyclic-polyol, and ultra-low dielectric materials prepared by using the same porogen are provided not to remain carbon residue after semiconductor-manufacturing process, and produce ultra-low dielectric materials having enhanced mechanical properties based on the same porosity and small size of pores, so that the ultra-low dielectric materials are useful as interlayer insulating film of next generation semiconductor for copper wiring. The reactive porogen is prepared by replacing the terminal hydroxy group of organic noncyclic-polyol by alkylalkoxysilane, wherein the organic noncyclic-polyol is completely pyrolyzed at 350-500 deg.C not to remain carbon residue; and the organic noncyclic-polyol is erythritol represented by the formula(1): (HOH2C)3C-CH2-OR or petaerythritol organic compound represented by the formula(2): HOCH2[CH(OH)]nCH2OH, wherein R is H, CH2C(CH2OH)3 or CH2C(CH2OH)2CH2OCH2C(CH2OH3), and n is an integer from 2 to 4. The ultra-low dielectric material composition comprises 10-90 volume% of organic or inorganic silicate precursor as an organic silicate matrix and 10-90 volume% of the porogen as a porogenic template, wherein the matrix is polymethylsilsesquioxane monopolymer or copolymer. The ultra-low dielectric materials are prepared by preparing a thin layer with the ultra-low dielectric material composition, and sol-gel reacting and heat-treating the thin layer.
摘要翻译：提供了基于有机非环多元醇的反应性致孔剂和通过使用相同的致孔剂制备的超低介电材料，在半导体制造过程之后不保留碳残留物，并且产生具有相同的机械性能的超低介电材料孔隙率小，孔径小，使得超低介电材料可用作铜布线下一代半导体的层间绝缘膜。通过用烷基烷氧基硅烷代替有机非环多元醇的末端羟基制备反应性致孔剂，其中有机非环多元醇在350-500℃完全热解而不残留碳残余物; 有机非环状多元醇为式（1）表示的赤藓糖醇：式（2）表示的（HOH2C）3C-CH2-OR或赤藓糖醇有机化合物：HOCH2 [CH（OH）] nCH2OH，其中R为H， CH 2 C（CH 2 OH）3或CH 2 C（CH 2 OH）2 CH 2 OCH 2 C（CH 2 OH 3），n是2至4的整数。超低介电材料组合物包含10-90体积％的有机或无机硅酸盐前体作为有机硅酸盐基质， 10-90体积％的致孔剂作为致孔模板，其中基质是聚甲基倍半硅氧烷单聚合物或共聚物。超低介电材料通过制备具有超低介电材料组合物的薄层，并对薄层进行溶胶 - 凝胶反应和热处理来制备。

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