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    • 6. 发明公开
    • 술폰산기를 가지는 실세스퀴옥산을 이용한 양성자 전도성 고분자나노복합막
    • 通过使用具有磺酸基团的聚酯低聚硅氧烷共聚物导电聚合物电解质的纳米复合膜
    • KR1020130118075A
    • 2013-10-29
    • KR1020120040975
    • 2012-04-19
    • 서강대학교산학협력단
    • 이희우길이진윤태웅
    • H01B1/12H01B5/14C07F7/21
    • PURPOSE: A proton-conducting polymer nanocomposite film has excellent proton conductivity even at high temperatures and has excellent mechanical strength superior than conventional PEMFC fluorine-based polymer film. CONSTITUTION: A proton-conducting polymer nanocomposite film is that a sulfonate group-introduced silsesquioxane is mixed to a proton-conducting polymer substrate. A manufacturing method of the proton-conducting polymer nanocomposite film comprises a step of dissolving a fluorine-based proton-conducting polymer substrate into a solvent; a step of dissolving a sulfonate-introduced silsesquioxane into a solvent; a step of mixing the fluorine-based polymer substrate solution and the silsesquioxane solution; a step of ultrasonic waves-treating the mixed solution and dispersing silsesquioxane in the fluorine-based polymer; and a step of carrying out a casting in a vacuum oven and removing residues. [Reference numerals] (AA) Example 2; (BB) Example 1; (CC) Comparative example
    • 目的:质子传导聚合物纳米复合膜即使在高温下也具有优异的质子传导性,并且机械强度优于常规PEMFC氟基聚合物膜。 构成:质子传导聚合物纳米复合膜是将引入磺酸基的倍半硅氧烷与质子传导性聚合物基质混合。 质子传导性聚合物纳米复合膜的制造方法包括将氟系质子传导性聚合物基材溶解在溶剂中的工序; 将磺化物引入的倍半硅氧烷溶解在溶剂中的步骤; 将氟基聚合物基材溶液与倍半硅氧烷溶液混合的工序; 超声波处理混合溶液并将倍半硅氧烷分散在氟基聚合物中的步骤; 以及在真空烘箱中进行铸造并除去残留物的步骤。 (附图标记)(AA)实施例2 (BB)实施例1; (CC)比较例
    • 9. 发明公开
    • 비환형 유기 폴리올을 이용한 반응형 기공형성제와 이를이용하여 제조된 초저유전막
    • 基于有机非离子聚合物的反应性多孔体和使用其制备的超低介电材料
    • KR1020060117563A
    • 2006-11-17
    • KR1020050039490
    • 2005-05-11
    • 서강대학교산학협력단
    • 이희우문봉진윤도영김현정민성규이태훈안건우
    • C07F7/02
    • H01L21/76801H01L21/02112H01L21/02203
    • A reactive porogen based on organic noncyclic-polyol, and ultra-low dielectric materials prepared by using the same porogen are provided not to remain carbon residue after semiconductor-manufacturing process, and produce ultra-low dielectric materials having enhanced mechanical properties based on the same porosity and small size of pores, so that the ultra-low dielectric materials are useful as interlayer insulating film of next generation semiconductor for copper wiring. The reactive porogen is prepared by replacing the terminal hydroxy group of organic noncyclic-polyol by alkylalkoxysilane, wherein the organic noncyclic-polyol is completely pyrolyzed at 350-500 deg.C not to remain carbon residue; and the organic noncyclic-polyol is erythritol represented by the formula(1): (HOH2C)3C-CH2-OR or petaerythritol organic compound represented by the formula(2): HOCH2[CH(OH)]nCH2OH, wherein R is H, CH2C(CH2OH)3 or CH2C(CH2OH)2CH2OCH2C(CH2OH3), and n is an integer from 2 to 4. The ultra-low dielectric material composition comprises 10-90 volume% of organic or inorganic silicate precursor as an organic silicate matrix and 10-90 volume% of the porogen as a porogenic template, wherein the matrix is polymethylsilsesquioxane monopolymer or copolymer. The ultra-low dielectric materials are prepared by preparing a thin layer with the ultra-low dielectric material composition, and sol-gel reacting and heat-treating the thin layer.
    • 提供了基于有机非环多元醇的反应性致孔剂和通过使用相同的致孔剂制备的超低介电材料,在半导体制造过程之后不保留碳残留物,并且产生具有相同的机械性能的超低介电材料 孔隙率小,孔径小,使得超低介电材料可用作铜布线下一代半导体的层间绝缘膜。 通过用烷基烷氧基硅烷代替有机非环多元醇的末端羟基制备反应性致孔剂,其中有机非环多元醇在350-500℃完全热解而不残留碳残余物; 有机非环状多元醇为式(1)表示的赤藓糖醇:式(2)表示的(HOH2C)3C-CH2-OR或赤藓糖醇有机化合物:HOCH2 [CH(OH)] nCH2OH,其中R为H, CH 2 C(CH 2 OH)3或CH 2 C(CH 2 OH)2 CH 2 OCH 2 C(CH 2 OH 3),n是2至4的整数。超低介电材料组合物包含10-90体积%的有机或无机硅酸盐前体作为有机硅酸盐基质, 10-90体积%的致孔剂作为致孔模板,其中基质是聚甲基倍半硅氧烷单聚合物或共聚物。 超低介电材料通过制备具有超低介电材料组合物的薄层,并对薄层进行溶胶 - 凝胶反应和热处理来制备。