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1. 发明公开

KR1020130013189A 파워 반도체 소자 无效
标题翻译：功率半导体器件
公开(公告)号：KR1020130013189A
公开(公告)日：2013-02-06
申请号：KR1020110074686
申请日：2011-07-27
申请人： 삼성전자주식회사
发明人： 허승배 , 이헌복 , 김기세
IPC分类号： H01L29/80 , H01L21/335
CPC分类号： H01L29/41758 , H01L29/2003 , H01L29/205 , H01L29/417 , H01L29/7786 , H01L29/872
摘要： PURPOSE: A power semiconductor device is provided to raise break down voltage and withstand voltage by forming equipotential electrodes in an element area. CONSTITUTION: A source electrode(120), a drain electrode(130) and a gate electrode(140) are formed on an element active area(110). The source electrode has multiple finger structures which extend from a second side(s2) to the first side(s1). An insulating layer includes multiple via contacts touching the source electrode and the drain electrode. A source electrode pad is formed in the first area on the insulating layer. A drain electrode pad(170) is formed in a second area separated from the first area.
摘要翻译：目的：提供功率半导体器件，通过在元件区域中形成等电位电极来提高分解电压和耐受电压。构成：源极电极（120），漏电极（130）和栅电极（140）形成在元件有源区（110）上。源电极具有从第二侧（s2）延伸到第一侧（s1）的多个指状结构。绝缘层包括接触源电极和漏电极的多个通孔触点。源电极焊盘形成在绝缘层的第一区域中。在与第一区域分离的第二区域中形成漏电极焊盘（170）。

2. 发明公开

KR1020130008279A 파워 반도체 소자 无效
标题翻译：功率半导体器件
公开(公告)号：KR1020130008279A
公开(公告)日：2013-01-22
申请号：KR1020110068935
申请日：2011-07-12
申请人： 삼성전자주식회사
发明人： 허승배 , 김기세
IPC分类号： H01L29/872 , H01L29/861
CPC分类号： H01L29/872 , H01L23/4824 , H01L29/1608 , H01L29/2003 , H01L29/417 , H01L2924/0002 , H01L2924/00
摘要： PURPOSE: A power semiconductor device is provided to dispose an anode electrode pad and multiple cathode electrode pads in the central part of the semiconductor layer and to improve current spreading. CONSTITUTION: An anode electrode pad is formed at the central part of an epitaxial water(101). An electrode bus line is gradually narrow from the anode electrode pad. Multiple first anode electrode fingers(163) are connected to both sides of the electrode bus line. A cathode electrode includes multiple second cathode electrode fingers. An insulating layer(180) insulates the cathode electrode. [Reference numerals] (110) Substrate; (120) Buffer layer; (130) Undoped nitride semiconductor layer; (141) First nitride semiconductor layer; (142) Second nitride semiconductor layer
摘要翻译：目的：提供一种功率半导体器件，用于在半导体层的中心部分设置阳极电极焊盘和多个阴极电极焊盘，并改善电流扩散。构成：在外延水（101）的中央部形成有阳极电极焊盘。电极母线从阳极电极垫逐渐变窄。多个第一阳极电极指（163）连接到电极总线的两侧。阴极包括多个第二阴极电极指。绝缘层（180）绝缘阴极电极。（附图标记）（110）基板; （120）缓冲层; （130）未掺杂的氮化物半导体层; （141）第一氮化物半导体层; （142）第二氮化物半导体层

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