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1. 发明公开

KR1020100071937A 발광소자 패키지, 백라이트 유닛, 디스플레이 장치 및 조명장치 有权
标题翻译：发光装置包，背光单元，显示装置和照明装置
公开(公告)号：KR1020100071937A
公开(公告)日：2010-06-29
申请号：KR1020090127737
申请日：2009-12-21
申请人： 삼성전자주식회사
发明人： 주성아 , 이효진 , 박일우 , 김경태
IPC分类号： H01L33/52 , H01L33/50 , H01L33/48
CPC分类号： H01L33/50 , H01L33/486 , H01L33/505 , H01L33/52 , H01L2224/48091 , H01L2224/48257 , H01L2224/8592 , H01L2924/3025 , H01L2933/0041 , B82Y20/00 , H01L2924/00014 , H01L2924/00
摘要： PURPOSE: A light emitting device package, a backlight unit, a display device, and a lighting device are provided to improve luminous efficiency by properly setting the shape and size of a groove in consideration of the shape and size of a chip. CONSTITUTION: A package body(11) provides a chip mounting region(11a). The package body includes a first lead terminal and a second lead terminal. An LED chip(15) is mounted on the chip mounting region. The LED chip is electrically connected to the first and second lead terminals. The groove unit is formed along the LED chip on the chip mounting region. A wavelength conversion unit(18) is made of resins containing a wavelength conversion material(18b).
摘要翻译：目的：提供发光器件封装，背光单元，显示装置和照明装置，以通过考虑芯片的形状和尺寸适当地设定凹槽的形状和尺寸来提高发光效率。构成：包装体（11）提供芯片安装区域（11a）。封装体包括第一引线端子和第二引线端子。 LED芯片（15）安装在芯片安装区域上。 LED芯片电连接到第一和第二引线端子。槽单元沿着芯片安装区域上的LED芯片形成。波长转换单元（18）由含有波长转换材料（18b）的树脂制成。

2. 发明公开

KR1020090029101A 발광 다이오드 패키지 및 그 제조방법 有权
标题翻译：发光二极管封装及其制造方法
公开(公告)号：KR1020090029101A
公开(公告)日：2009-03-20
申请号：KR1020070094376
申请日：2007-09-17
申请人： 삼성전자주식회사
发明人： 박정규 , 김유동 , 최승환 , 주성아
IPC分类号： H01L33/50 , H01L33/52
CPC分类号： H01L33/505 , H01L24/97 , H01L33/483 , H01L2224/48091 , H01L2224/48247 , H01L2224/97 , H01L2924/12041 , H01L2924/15787 , H01L2924/15788 , H01L2924/00014 , H01L2224/85 , H01L2924/00
摘要： A light emitting diode package and a manufacturing method thereof are provided to minimize deviation of a color coordinate by directly mounting a LED chip on a phosphor substrate. A LED chip(120) is mounted on a phosphor substrate(110). A circuit substrate(130) is mounted on the phosphor substrate of a region except for a region on which the LED chip is mounted. An electrode connection part(140) connects the LED chip to the circuit substrate. An encapsulant(150) covers the LED chip, the circuit substrate, and the phosphor substrate. The phosphor substrate is a substrate containing a phosphor inside a glass substrate. The electrode connection part is composed of a wire.
摘要翻译：提供一种发光二极管封装及其制造方法，通过将LED芯片直接安装在荧光体基板上来最小化色坐标的偏差。 LED芯片（120）安装在荧光体基板（110）上。电路基板（130）安装在除了安装有LED芯片的区域之外的区域的荧光体基板上。电极连接部（140）将LED芯片连接到电路基板。密封剂（150）覆盖LED芯片，电路基板和荧光体基板。荧光体基板是在玻璃基板内部含有荧光体的基板。电极连接部由导线构成。

3. 发明公开

KR1020150106268A 발광 다이오드 모듈용 렌즈 및 발광 다이오드 모듈 조명 장치 审中-实审
标题翻译：发光二极管模块透镜和发光二极管模块照明设备
公开(公告)号：KR1020150106268A
公开(公告)日：2015-09-21
申请号：KR1020140028592
申请日：2014-03-11
申请人： 삼성전자주식회사
发明人： 주성아
IPC分类号： H01L33/58
CPC分类号： F21V5/007 , F21S41/147 , F21S41/29 , F21S45/47 , F21S45/50 , F21V17/164 , F21V29/763 , F21Y2105/10 , F21Y2115/10
摘要： 본 발명의 기술적 사상에 의한 발광 다이오드 모듈용 렌즈판은 견고한 체결이 가능하고, 상기 발광 다이오드 모듈용 렌즈판을 발광 다이오드 모듈과 탈착이 가능하게 하기 위해, 사각형 평면 구조의 렌즈 기판; 상기 렌즈 기판 상에 형성되는 적어도 하나의 돔 구조의 렌즈부; 및 상기 렌즈 기판의 각 변에 형성되는 경첩 구조를 포함하는 발광 다이오드 모듈용 렌즈판을 제공한다.
摘要翻译：根据本发明的技术思想，用于发光二极管模块的透镜板，以便能够牢固地耦合，并且将用于发光二极管模块的透镜板从发光二极管模块拆下，反之亦然，提供：矩形结构的透镜基板; 在透镜板上形成的圆顶结构中的至少一个透镜单元; 以及形成在透镜板的每一侧的铰链结构。

4. 发明公开

KR1020100058770A 발광 다이오드 패키지 및 그 제조방법 无效
标题翻译：发光二极管封装及其制造方法
公开(公告)号：KR1020100058770A
公开(公告)日：2010-06-04
申请号：KR1020080117299
申请日：2008-11-25
申请人： 삼성전자주식회사
发明人： 주성아 , 박일우 , 곽창훈
IPC分类号： H01L33/52
CPC分类号： H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2924/00014
摘要： PURPOSE: A light emitting diode package and a manufacturing method thereof are provided to express the cover of the light emitting diode package with desired color by additionally coating the filler of desired color on the top of molding material. CONSTITUTION: A pair of lead frames(110) is prepared. A package mold(120) comprises the molding material filling space. An LED chip(130) is mounted on the lead frame inside the package. A filler(160) is spread in the molding material filling space of the molding material top. The molding material includes the light-passing resin or the transparent resin mixed with the fluorescent substance(155).
摘要翻译：目的：提供一种发光二极管封装及其制造方法，通过在模制材料的顶部附加涂覆所需颜色的填料以表达具有所需颜色的发光二极管封装的盖。构成：准备一对引线框架（110）。包装模具（120）包括成型材料填充空间。 LED芯片（130）安装在封装内的引线框架上。填料（160）分散在成型材料顶部的成型材料填充空间中。成型材料包括透光树脂或与荧光物质（155）混合的透明树脂。

5. 发明公开

KR1020090032211A 수직구조 질화갈륨계 발광다이오드 소자 无效
标题翻译：垂直结构的GAN型LED器件
公开(公告)号：KR1020090032211A
公开(公告)日：2009-04-01
申请号：KR1020070097224
申请日：2007-09-27
申请人： 삼성전자주식회사
发明人： 박정규 , 정영준 , 최승환 , 주성아 , 고건유
IPC分类号： H01L33/00
摘要： A vertically structured GaN type LED device is provided to improve the heat radiating property by forming a structural support layer with the carbon nanotube. An n-type bonding pad(110) is formed on the top part of the vertical structure gallium nitride-based LED element. An n-type electrode(120) is formed on the bottom part of the n-type bonding pad. An n-type nitride gallium film(130) is formed in the bottom part of n-type electrode. The n-type nitride gallium film is formed with the GaN layer or the GaN/AlGaN layer doped by the n-type impurity. An active layer(140) and a p-type nitride gallium film(150) are formed on the bottom part of the n-type nitride gallium film. A p-type electrode(160) is formed in the bottom part of the p-type nitride gallium film of the gallium nitride-based LED structure. A structural support layer(180) supporting the gallium nitride-based LED structure is formed on the bottom part of p-type electrode. The structural support layer is made of the carbon nanotube. A bonding layer(170) is formed between the p-type electrode and the structural support layer. The bonding layer has the first Ohmic layer(170a), a bonding layer(170b) and a laminating structure of the second Ohmic layer(170c).
摘要翻译：提供垂直结构的GaN型LED器件，通过与碳纳米管形成结构支撑层来提高散热性能。在垂直结构的氮化镓系LED元件的顶部形成有n型接合焊盘（110）。 n型电极（120）形成在n型接合焊盘的底部。 n型氮化镓膜（130）形成在n型电极的底部。 n型氮化镓膜形成有由n型杂质掺杂的GaN层或GaN / AlGaN层。在n型氮化镓膜的底部形成有源层（140）和p型氮化镓膜（150）。在氮化镓系LED结构的p型氮化镓膜的底部形成有p型电极（160）。在p型电极的底部形成有支撑氮化镓系LED结构的结构支撑层（180）。结构支撑层由碳纳米管制成。在p型电极和结构支撑层之间形成结合层（170）。接合层具有第一欧姆层（170a），接合层（170b）和第二欧姆层（170c）的层压结构。

6. 发明授权

KR102140790B1 발광 다이오드 모듈용 렌즈 및 발광 다이오드 모듈 조명 장치 有权
公开(公告)号：KR102140790B1
公开(公告)日：2020-08-03
申请号：KR1020140028592
申请日：2014-03-11
申请人： 삼성전자주식회사
发明人： 주성아
IPC分类号： H01L33/58

7. 发明授权

KR101361575B1 발광 다이오드 패키지 및 그 제조방법 有权
标题翻译：发光二极管封装及其制造方法
公开(公告)号：KR101361575B1
公开(公告)日：2014-02-13
申请号：KR1020070094376
申请日：2007-09-17
申请人： 삼성전자주식회사
发明人： 박정규 , 김유동 , 최승환 , 주성아
IPC分类号： H01L33/50 , H01L33/52
CPC分类号： H01L33/505 , H01L24/97 , H01L33/483 , H01L2224/48091 , H01L2224/48247 , H01L2224/97 , H01L2924/12041 , H01L2924/15787 , H01L2924/15788 , H01L2924/00014 , H01L2224/85 , H01L2924/00
摘要： 본 발명은 발광 다이오드 패키지 및 그 제조방법에 관한 것으로서, 특히, 형광체 기판과, 상기 형광체 기판 상에 실장된 LED 칩과, 상기 LED 칩이 실장된 영역을 제외한 영역의 상기 형광체 기판 상에 실장된 회로 기판과, 상기 LED 칩과 상기 회로 기판의 통전을 위한 전극 연결부 및 상기 LED 칩과 회로 기판 및 형광체 기판을 덮는 봉지재를 포함하는 발광 다이오드 패키지를 제공한다.
또한, 본 발명은 상기 발광 다이오드 패키지의 제조방법을 제공한다.
발광다이오드, 패키지, 형광체, 박형화

8. 发明公开

KR1020100058769A 발광 다이오드 패키지 및 그 제조방법 无效
标题翻译：发光二极管封装及其制造方法
公开(公告)号：KR1020100058769A
公开(公告)日：2010-06-04
申请号：KR1020080117298
申请日：2008-11-25
申请人： 삼성전자주식회사
发明人： 주성아 , 박나나 , 박일우
IPC分类号： H01L33/56
CPC分类号： H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2924/00014
摘要： PURPOSE: A light emitting diode package and a manufacturing method thereof are provided to overcome limitation of appearance and design of the light emitting diode package by forming a thin film on the top of the package mold and covering the original color of fluorescent substance. CONSTITUTION: A pair of lead frames(110) is prepared. A package mold(120) comprises a molding material filling space. An LED chip(130) is mounted on the lead frame inside the package mold. A thin film(160) opens and shuts the molding material fill space of the package mold. A molding material(150) is filled in the molding material filling space of the package mold.
摘要翻译：目的：提供一种发光二极管封装及其制造方法，以通过在封装模具的顶部形成薄膜并覆盖荧光物质的原始颜色来克服对发光二极管封装的外观和设计的限制。构成：准备一对引线框架（110）。包装模具（120）包括模制材料填充空间。 LED芯片（130）安装在封装模具内的引线框架上。薄膜（160）打开并关闭包装模具的成型材料填充空间。成型材料（150）填充在包装模具的成型材料填充空间中。

9. 发明公开

KR1020090032775A 발광다이오드 패키지 无效
标题翻译：发光二极管封装
公开(公告)号：KR1020090032775A
公开(公告)日：2009-04-01
申请号：KR1020070098264
申请日：2007-09-28
申请人： 삼성전자주식회사
发明人： 최승환 , 고건유 , 정영준 , 주성아 , 박정규
IPC分类号： H01L33/58 , H01L33/62 , H01L33/52
CPC分类号： H01L2224/48091 , H01L2924/00014
摘要： A light-emitting diode package is provided to obtain the efficient optical alignment by increasing the freedom degree for utilizing the wide lens surface. A package body(110) comprises a concave part(112) consisting of the cavity having the space of the constant size. A light emitting diode chip(130) is installed at the bottom surface of the concave part. The light emitting diode chip is electrically connected to the lead frame through the wire. A resin shield part(140) is formed in the concave part and seals the light emitting diode chip. The side wall(114) that surrounds the concave part is made of transparent materials. The side wall supports a lead frame(120).
摘要翻译：提供了一种发光二极管封装，以通过增加利用宽透镜表面的自由度来获得有效的光学对准。包装体（110）包括由具有恒定尺寸的空间的空腔组成的凹部（112）。发光二极管芯片（130）安装在凹部的底面。发光二极管芯片通过导线电连接到引线框架。树脂屏蔽部分（140）形成在凹部中并密封发光二极管芯片。围绕凹部的侧壁（114）由透明材料制成。侧壁支撑引线框架（120）。

10. 发明公开

KR1020090032212A 플립칩용 질화물계 반도체 발광소자 无效
标题翻译：用于片芯的氮化物半导体发光器件
公开(公告)号：KR1020090032212A
公开(公告)日：2009-04-01
申请号：KR1020070097226
申请日：2007-09-27
申请人： 삼성전자주식회사
发明人： 고건유 , 정영준 , 최승환 , 주성아 , 박정규
IPC分类号： H01L33/00 , H01L21/60
摘要： A nitride semiconductor light emitting device for the flip-chip is provided to improve the heat emitting characteristic by using the high thermal conductivity of the carbon nanotube. An LED chip(100) comprises a substrate(110) which is the optical permeability, a buffer layer, and an n-type nitride semiconductor layer(120). The n-type nitride semiconductor layer is made of semiconductor material having the composition expression of InxAlyGa1-x-yN. The light emitting structure is formed by successively laminating an active layer(130) and a p-type nitride semiconductor layer(140) on the first region of the n-type nitride semiconductor. The active layer is made of the InGaN/GaN layer of the multi-quantum well structure. A p-type electrode(150) is formed in the p-type nitride semiconductor layer. An n-type electrode(160) is formed in the second part of the n-type nitride semiconductor layer. A sub mount(200) is formed by using the silicon wafer with the superior thermal conductivity or the AlN ceramic substrate etc. A bonding layer(300) is made of a carbon nanotube(310).
摘要翻译：提供了一种用于倒装芯片的氮化物半导体发光器件，以通过使用碳纳米管的高热导率来改善发热特性。 LED芯片（100）包括作为光导率的衬底（110），缓冲层和n型氮化物半导体层（120）。 n型氮化物半导体层由具有In x Al y Ga 1-x-y N的组成表达的半导体材料制成。发光结构通过在n型氮化物半导体的第一区域上依次层叠有源层（130）和p型氮化物半导体层（140）而形成。有源层由多量子阱结构的InGaN / GaN层制成。 p型电极（150）形成在p型氮化物半导体层中。 n型电极（160）形成在n型氮化物半导体层的第二部分中。通过使用具有优良导热性的硅晶片或AlN陶瓷基板等，形成副安装座（200）。接合层（300）由碳纳米管（310）制成。

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