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1. 发明公开

KR1020120026314A 미세 패턴 형성 방법 无效
标题翻译：形成微孔蛋白的方法
公开(公告)号：KR1020120026314A
公开(公告)日：2012-03-19
申请号：KR1020100088467
申请日：2010-09-09
申请人： 삼성전자주식회사
发明人： 박정주 , 김경미 , 양주형 , 이보희 , 김민정 , 김재호 , 김영호
IPC分类号： H01L21/027
CPC分类号： G03F7/0392 , G03F7/325 , G03F7/40 , H01L21/0337 , H01L21/0274 , G03F7/2022 , G03F7/70916
摘要： PURPOSE: A method of forming a micropattern is provided to improve LWR(Line Width Roughness) by forming a line-and-space pattern using a negative tone developer. CONSTITUTION: A photoresist(130) is spread on a substrate(110). The photoresist is exposed to outside by corresponding to the pattern of a line-and-space The non-exposure unit of the photoresist is removed using a negative tone developer to form the line-and-space pattern. The space of a spin-on-oxide material is formed in the side wall of the line-and-space pattern. The line-and-space pattern is removed by the developer.
摘要翻译：目的：提供一种形成微图案的方法，通过使用负色调显影剂形成线间距图案来提高LWR（线宽粗糙度）。构成：将光致抗蚀剂（130）铺展在基底（110）上。光致抗蚀剂通过对应于线和空间的图案而暴露于外部。使用负色调显影剂除去光致抗蚀剂的非曝光单元以形成线间距图案。旋转氧化物材料的空间形成在线间距图案的侧壁中。线和空间图案由开发者移除。

2. 发明公开

KR1020110130257A 포토리쏘그래피를 이용한 반도체 소자의 형성 방법 无效
标题翻译：使用光刻技术形成半导体器件的方法
公开(公告)号：KR1020110130257A
公开(公告)日：2011-12-05
申请号：KR1020100049813
申请日：2010-05-27
申请人： 삼성전자주식회사
发明人： 박미라 , 김경미 , 박정주 , 이보희 , 김재호 , 김영호
IPC分类号： H01L21/027
CPC分类号： H01L21/0274 , G03F7/2008 , H01L21/0337
摘要： PURPOSE: A method of forming a semiconductor device using a photolithography is provided to improve throughput by forming a much finer pattern using the same mask without an additional mask and reducing a setting time. CONSTITUTION: In a method of forming a semiconductor device using a photolithography, a reflection barrier layer and a first photoresist film are formed in the top of a substrate(S10). The first photoresist film is exposed to outside(S20). The first pattern including the first opening is formed by developing the first photoresist film(S30). The first pattern is plasma-processed(S40). A second photoresist film is formed in the first pattern(S50). The second photoresist film is exposed to outside(S60). A second pattern including the second opening is formed by developing the second photoresist film(S70).
摘要翻译：目的：提供使用光刻法形成半导体器件的方法，以通过使用相同的掩模在不附加掩模的情况下形成更精细的图案来提高生产率，并减少凝固时间。构成：在使用光刻法形成半导体器件的方法中，在衬底的顶部形成反射阻挡层和第一光致抗蚀剂膜（S10）。第一光致抗蚀剂膜暴露于外部（S20）。通过显影第一光致抗蚀剂膜形成包括第一开口的第一图案（S30）。第一图案是等离子体处理的（S40）。以第一图案形成第二光致抗蚀剂膜（S50）。第二光致抗蚀剂膜暴露于外部（S60）。通过显影第二光致抗蚀剂膜（S70）形成包括第二开口的第二图案。

3. 发明公开

KR1020120027989A 반도체 소자의 패턴 형성방법 无效
标题翻译：形成半导体器件图案的方法
公开(公告)号：KR1020120027989A
公开(公告)日：2012-03-22
申请号：KR1020100089920
申请日：2010-09-14
申请人： 삼성전자주식회사
发明人： 이보희 , 김경미 , 박정주 , 박미라 , 김재호 , 김영호
IPC分类号： H01L21/027
CPC分类号： H01L21/0273 , H01L21/0337 , H01L21/0338 , H01L21/32139 , G03F7/2022 , H01L21/0274
摘要： PURPOSE: A method for forming a pattern of a semiconductor device is provided to perform a double patterning process using a spin coating method, thereby reducing costs and processing time in forming micro patterns of the semiconductor device. CONSTITUTION: A mask pattern is formed on a substrate(100). A CAP(Chemical Attach Process) material layer covers the mask pattern. A part of the CAP material layer is bonded with the mask pattern by a first bake process and a first developing process to form a CAP bonding layer. A medium material layer covers the mask pattern and the CAP bonding layer. The CAP bonding layer is left through a second bake process and a second developing process and the mask pattern and the medium material layer are eliminated.
摘要翻译：目的：提供一种用于形成半导体器件的图案的方法，以使用旋涂法进行双重图案化处理，从而降低了形成半导体器件的微图形的成本和处理时间。构成：在基板（100）上形成掩模图案。 CAP（化学附着工艺）材料层覆盖掩模图案。 CAP材料层的一部分通过第一烘烤工艺和第一显影工艺与掩模图案结合以形成CAP结合层。中间材料层覆盖掩模图案和CAP粘合层。 CAP结合层通过第二烘烤工艺和第二显影处理，并且掩模图案和介质材料层被去除。

4. 发明公开

KR1020110133828A 포토레지스트 패턴 형성 방법 无效
标题翻译：形成光电子图案的方法
公开(公告)号：KR1020110133828A
公开(公告)日：2011-12-14
申请号：KR1020100053453
申请日：2010-06-07
申请人： 삼성전자주식회사
发明人： 김경미 , 박정주 , 박미라 , 이보희 , 김재호 , 김영호
IPC分类号： H01L21/027
CPC分类号： H01L21/0273 , H01L21/0337 , H01L21/0338 , H01L21/3086 , H01L21/3088 , H01L21/31144 , H01L21/32139 , H01L27/11521 , H01L21/0274
摘要： PURPOSE: A method for forming a photoresist pattern is provided to perform light exposing and developing processes twice under the same conditions, thereby readjusting processing conditions. CONSTITUTION: A mask film(104) is coated on a substrate(100) on which a target film(102) to be etched is formed. A reflection preventing film(110) is coated on the mask film. The reflection preventing film is made of organic and inorganic materials to prevent diffused reflection during a light exposure process. The reflection preventing film includes an inorganic reflection preventing film(106) and an organic reflection preventing film(108). A first photoresist film is coated on the reflection preventing film to form a reserved first photoresist pattern.
摘要翻译：目的：提供形成光致抗蚀剂图案的方法，以在相同条件下进行两次曝光和显影处理，从而重新调整处理条件。构成：将掩模膜（104）涂覆在其上形成有待蚀刻的目标膜（102）的基板（100）上。防反射膜（110）涂覆在掩模膜上。防反射膜由有机和无机材料制成，以防止曝光过程中的漫反射。防反射膜包括无机反射防止膜（106）和有机防反射膜（108）。第一光致抗蚀剂膜涂覆在防反射膜上以形成预留的第一光致抗蚀剂图案。

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