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2. 发明公开

KR1020010017411A 단일 전자 충전 ＭＮＯＳ계 메모리 및 그 구동 방법 失效
标题翻译：单电子充电金属氧化物半导体存储器及其驱动方法
公开(公告)号：KR1020010017411A
公开(公告)日：2001-03-05
申请号：KR1019990032906
申请日：1999-08-11
申请人： 삼성전자주식회사
发明人： 이조원 , 김문경 , 김병만 , 윤석열 , 노형래
IPC分类号： H01L27/115
CPC分类号： B82Y10/00 , H01L29/7613 , H01L29/792
摘要： PURPOSE: A single electron charging metal-nitride-oxide-semiconductor(MNOS) memory is provided to use a variation of a threshold voltage caused by single electron charging which is generated when a channel width of the MNOS memory is smaller than or the same as Debye screen length of an electron determined according to an impurity density of a semiconductor substrate. CONSTITUTION: A semiconductor substrate is of the first conductivity type. A channel of an inversion layer is formed on the semiconductor substrate. A source(22) and a drain(23) doped with the second conductivity type are formed in the substrate on both sides of the channel. An oxide layer(24) is formed on the channel. A nitride layer(25) is formed on the oxide layer. A gate(26) is formed on the nitride layer. Electrons are charged in trap sites formed between the oxide layer and the nitride layer. The width of the channel is smaller than Debye screen length LD that is as follows. LD = (epsilon multiplied by kB multiplied by T / q¬2 multiplied by NA)¬1/2 (LD; Debye screen length, epsilon; dielectric coefficient of the substrate, kB; Boltzmann's coefficient, T; absolute temperature, q; quantity of charge, and NA; impurity density of the substrate)
摘要翻译：目的：提供单电荷充电金属氮化物 - 氧化物半导体（MNOS）存储器，以使用由单电荷充电产生的阈值电压的变化，当MNOS存储器的沟道宽度小于或等于根据半导体衬底的杂质浓度确定的电子的德拜屏幕长度。构成：半导体衬底是第一导电类型。在半导体衬底上形成反转层的沟道。掺杂有第二导电类型的源极（22）和漏极（23）形成在沟道两侧的衬底中。在通道上形成氧化物层（24）。在氧化物层上形成氮化物层（25）。在氮化物层上形成栅极（26）。电子被填充在形成在氧化物层和氮化物层之间的陷阱位置。通道的宽度小于德拜屏幕长度LD，如下所示。 LD =（ε乘以kB乘以T / q乘以NA）¬1/ 2（LD;德拜屏幕长度，ε;衬底的介电系数，kB;玻尔兹曼系数，T;绝对温度，q;数量的电荷，NA;衬底的杂质浓度）

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