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2. 发明公开

KR1020030084110A ＨＣＤ 소스를 이용하여 실리콘 산화막을 원자층 증착하는방법 有权
标题翻译：使用HCD光源的氧化硅膜的原子层沉积方法
公开(公告)号：KR1020030084110A
公开(公告)日：2003-11-01
申请号：KR1020020022618
申请日：2002-04-25
申请人： 삼성전자주식회사
发明人： 이주원 , 추강수 , 박재언 , 양종호 , 김정수 , 심상태 , 조병하 , 이원형 , 신철호 , 김용일
IPC分类号： C23C16/40
CPC分类号： C30B29/18 , C23C16/402 , C23C16/4405 , C23C16/45531 , C23C16/45534 , C30B25/14
摘要： PURPOSE: A method for forming silicon oxide film to a high deposition rate at a low temperature using HCD (hexachloro disilane) and H2O sources and catalyst is provided. CONSTITUTION: The method for forming silicon oxide film is characterized in that atomic layer deposition process is performed using Si2Cl6 as a silicon source, wherein the process is performed at a temperature of 50 to 200 deg.C, wherein the process is performed under the existence of catalyst, wherein the catalyst is Lewis base, and wherein the catalyst is selected from the group consisting of pyridine, trimethylamine (TMA), triethylamine (TEA) and a mixture thereof. The method for forming silicon oxide film comprises a step (a) of exposing a semiconductor substrate having -OH group thereon to first catalyst for activating -H group; a step (b) of performing reaction of the following reaction formula 3 by exposing the resulting surface to Si2Cl6 (hexachloro disilane); a step (c) of exposing the resulting surface to second catalyst for activating -Cl group; and a step (d) of performing reaction of the following reaction formula 4 by exposing the resulting surface to H2O:£Reaction Formula 3|: (-OH¬+) + (Si2Cl6) → (-O-Si2Cl5) / (-O-Si2Cl4) + (HCl), £Reaction Formula 4|: (-O-Si-Cl¬-) + (H2O) → (-O-Si-OH) + (HCl).
摘要翻译：目的：提供使用HCD（六氯乙硅烷）和H 2 O源和催化剂在低温下形成高沉积速率的氧化硅膜的方法。构成：形成氧化硅膜的方法的特征在于，使用Si 2 Cl 6作为硅源进行原子层沉积工艺，其中该工艺在50至200℃的温度下进行，其中该工艺在存在下进行的催化剂，其中所述催化剂是路易斯碱，并且其中所述催化剂选自吡啶，三甲胺（TMA），三乙胺（TEA）及其混合物。形成氧化硅膜的方法包括将其上具有-OH基团的半导体衬底暴露于用于活化-H基团的第一催化剂的步骤（a）通过将所得表面暴露于Si 2 Cl 6（六氯乙硅烷）进行以下反应式3的反应的步骤（b）; 将所得表面暴露于用于活化-CCl基团的第二催化剂的步骤（c）; 反应式3 |：（-OH-+）+（Si 2 Cl 6）→（-O-Si 2 Cl 5）/（ - O），反应式4通过将所得表面暴露于H 2 O进行下列反应式4的反应：反应式4 |：（-O-Si-Cl - ）+（H 2 O）→（-O-Si-OH）+（HCl））。

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