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    • 7. 发明公开
    • 반도체 장치의 제조 방법
    • 制造半导体器件的方法
    • KR1020100106113A
    • 2010-10-01
    • KR1020090024574
    • 2009-03-23
    • 삼성전자주식회사
    • 손웅희김병희김대용송민상최길현문광진김현수이장희정은지이은옥
    • H01L21/28
    • H01L29/7827H01L27/10876H01L29/456H01L29/66666
    • PURPOSE: A method of manufacturing semiconductor device is provided to completely remove an oxide film formed on a trench in a post process by forming the oxide film on the bottom of the trench thicker than that of the oxide film on the side of the trench. CONSTITUTION: A plurality of channel structures(20) are formed on a substrate(10). The channel structures are formed by etching a part of the substrate. The gate electrode is formed in both sides of the channel structures. A drain region(50) is formed in the substrate under the channel structures through an ion injection process. A source region(60) is formed on the top of channel structures through the ion injection process. A buried-bit line(30) is formed in the wall of the trench(23) in order to be electrically connected to a drain region. The word line(40) is formed on the top of the substrate.
    • 目的:提供一种制造半导体器件的方法,通过在沟槽的底部形成厚于沟槽侧的氧化膜厚度的氧化膜,在后处理中完全去除形成在沟槽上的氧化膜。 构成:在衬底(10)上形成多个通道结构(20)。 通过蚀刻基板的一部分来形成沟道结构。 栅电极形成在通道结构的两侧。 通过离子注入工艺在沟道结构下的衬底中形成漏极区(50)。 通过离子注入工艺在沟道结构的顶部形成源区(60)。 在沟槽(23)的壁中形成掩埋位线(30),以便电连接到漏极区域。 字线(40)形成在基板的顶部。