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1. 发明授权

KR101459196B1 ＴｉＡｌＮ 벌크소재의 제조방법 및 마이크로 방전가공 방법 有权
标题翻译：最大相的制造方法TiAlN散装材料和微型放电钻孔方法三
公开(公告)号：KR101459196B1
公开(公告)日：2014-11-07
申请号：KR1020120158355
申请日：2012-12-31
申请人： 부산대학교 산학협력단
发明人： 강명창 , 허재영 , 김광호 , 성진우
IPC分类号： B22F3/105
摘要： 본 발명은 MAX 상(Phases) Ti
2 AlN 벌크소재를 제공하고, 그에 대한 미세 가공을 제공하고자 한다.
본 발명은, 티타늄(Ti), 알루미늄(Al) 그리고 질화티탄(TiN) 분말을 Ti:Al:TiN=1:1:1의 비율로 마멸 밀링기(attrition milling machine)에서 혼합 및 합성하고, 합성된 분말은 방전 플라즈마 소결로를 이용하여 플라즈마 소결하여 MAX 상(Phases) Ti
2 AlN 벌크소재를 제조하는 방법을 제시하며, 제조된 Ti
2 AlN 벌크소재에, 마이크로 방전가공을 적용해 수십 내지 수백 μm 직경을 갖는 홀 가공 등을 신속하게 할 수 있는 가공방법을 제시하였다.

2. 发明公开

KR1020140087751A ＴｉＡｌＮ 벌크소재의 제조방법 및 마이크로 방전가공 방법 有权
标题翻译：最大相位材料的制造方法和微电子放电钻孔方法三
公开(公告)号：KR1020140087751A
公开(公告)日：2014-07-09
申请号：KR1020120158355
申请日：2012-12-31
申请人： 부산대학교 산학협력단
发明人： 강명창 , 허재영 , 김광호 , 성진우
IPC分类号： B22F3/105
CPC分类号： B22F3/105 , B22F9/04 , B22F2009/045 , B22F2202/13
摘要： The present invention provides a Ti_2AlN bulk material in a MAX phase and a micro-processing method thereof. According to the present invention, powders of titanium (Ti), aluminum (Al) and titanium nitride (TiN) are mixed and synthesized at a ratio of Ti:Al:TiN=1:1:1 in the attrition milling machine; and the synthesized powder is processed by plasma sintering using a sintering furnace so as to manufacture the Ti_2AlN bulk material in a MAX phase. The micro-electrical-discharging process is performed on the manufactured Ti_2AlN so that a process for forming a hole with a diameter of tens to hundreds μm can be rapidly performed.
摘要翻译：本发明提供了一种MAX相中的Ti_2AlN体材料及其微加工方法。根据本发明，在磨粉机中以Ti:Al:TiN = 1:1:1的比例混合并合成钛（Ti），铝（Al）和氮化钛（TiN）的粉末; 并使用烧结炉通过等离子体烧结处理合成粉末，以便在MAX相中制造Ti_2AlN块状材料。在制造的Ti_2AlN上进行微电子放电处理，可以快速地进行直径为数十〜数百μm的孔的形成工序。

3. 发明公开

KR1020140090750A ＴｉＡｌＮ 벌크소재의 제조방법 및 마이크로 방전가공 방법 审中-实审
标题翻译：最大相位材料的制造方法和微电子放电钻孔方法三
公开(公告)号：KR1020140090750A
公开(公告)日：2014-07-18
申请号：KR1020130002735
申请日：2013-01-10
申请人： 부산대학교 산학협력단
发明人： 강명창 , 김광호 , 허재영 , 성진우
IPC分类号： B22F3/105 , B23H7/00
CPC分类号： B22F3/105 , B22F5/00 , B22F2003/1051 , B22F2202/13
摘要： The present invention provides a manufacturing method of a Ti2AlN bulk material and a micro-processing method thereof. According to the manufacturing method of a Ti2AlN bulk material, titanium (Ti), aluminum (Al) and titanium nitride (TiN) powder are mixed and synthesized by an attrition milling machine at a ratio of Ti : A l: TiN=1 : 1 : 1; and the Ti2AlN bulk material is manufactured by plasma-sintering the synthesized powder using a spark plasma sintering furnace. According to the processing method, a micro electrical discharging process is applied to the manufactured Ti2AlN bulk material; and thus a process of making a hole having a diameter of tens to hundreds μm can be rapidly performed.
摘要翻译：本发明提供了一种Ti2AlN体材料的制造方法及其微加工方法。根据Ti2AlN体材料的制造方法，钛（Ti），铝（Al）和氮化钛（TiN）粉末由磨耗机以Ti:Al:TiN = 1:1的比例混合合成：1; 并且通过使用放电等离子体烧结炉对合成粉末进行等离子体烧结来制造Ti2AlN散装材料。根据该处理方法，对制造的Ti2AlN散装材料进行微电子放电处理; 因此可以快速地进行制造直径为数十至数百μm的孔的工艺。

4. 发明公开

KR1020140090754A ＭＡＸ 상 박막의 제조방법 审中-实审
标题翻译：最大相薄膜制造方法
公开(公告)号：KR1020140090754A
公开(公告)日：2014-07-18
申请号：KR1020130002743
申请日：2013-01-10
申请人： 부산대학교 산학협력단
发明人： 강명창 , 김광호 , 허재영 , 성진우
IPC分类号： C23C14/34
CPC分类号： C23C14/0641 , C23C14/3471 , C23C14/3485 , C23C14/5806
摘要： The present invention relates to a Ti2AIN MAX phase thin film and provides a method to manufacture a crystalline thin film directly from an amorphous Ti2AIN MAX thin film while depositing the thin film at relatively low temperatures, which is different from a conventional technology crystallizing by treating the amorphous Ti2AIN MAX thin film, which is formed by sputtering, with post heat at 800°C. According to the present invention, the method provides a wide choice of base materials since the method is capable of manufacturing an excellent crystalline thin film at the relatively low temperature of 400-500°C by manufacturing and using a Ti2AIN target, and ionizing metal particles escaping from the target by using plasma discharged by supplying impulse voltage, thereby extending the limit of application of the Ti2AIN MAX phase thin film.
摘要翻译：本发明涉及Ti2AIN MAX相薄膜，并且提供了一种从非晶Ti2AIN MAX薄膜直接制造晶体薄膜的方法，同时在相对低的温度下沉积薄膜，这与传统技术结晶不同，非晶Ti2AIN MAX薄膜，其通过溅射形成，在800℃下后热。根据本发明，该方法提供了广泛的基材选择，因为该方法能够通过制造和使用Ti2AIN靶而在400-500℃的较低温度下制造优异的结晶薄膜，并且电离金属颗粒通过使用通过提供脉冲电压的等离子体放电，从目标逃逸，从而延长了Ti2AIN MAX相薄膜的应用极限。

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