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    • 4. 发明公开
    • 광전자 및 전자 소자에 사용하기에 적합한 복합 필름
    • 适用于光电和电子设备的复合膜
    • KR1020070116117A
    • 2007-12-06
    • KR1020077023854
    • 2006-03-16
    • 듀폰 테이진 필름즈 유.에스. 리미티드 파트너쉽
    • 맥도날드,윌리엄,알레스데어플라시도,프랭크이브슨,로버트,윌리엄
    • H01L51/00B29C55/06C08L67/03
    • H01L51/52B29C55/04H01L51/0097H01L51/5253H01L51/56H01L2251/5338H05K1/0393H05K3/0011H05K3/388H05K2201/0175H05K2203/0271H05K2203/1105H05K2203/165Y02E10/549Y02P70/521Y10T428/265
    • A method of manufacture of a composite film, and a method of manufacturing an electronic or opto-electronic device, said method comprising the steps of (i) forming a polymeric substrate layer; (ii) stretching the substrate layer in at least one direction; (iii) heat-setting under dimensional restraint at a tension in the range of about 19 to about 75 kg/m of film width, at a temperature above the glass transition temperature of the polymer of the substrate layer but below the melting temperature thereof; (iv) heat-stabilising the film at a temperature above the glass transition temperature of the polymer of the substrate layer but below the melting temperature thereof; (v) applying a planarising coating composition such that the surface of said coated substrate exhibits an Ra value of less than 0.6 nm, and/or an Rq value of less than 0.8 nm; and (vi) providing an inorganic barrier layer of thickness from 2 to l000nm by high-energy vapour deposition; and optionally (vii) providing the composite film comprising said polymeric substrate layer, said planarising coating layer and said inorganic barrier layer as a substrate in said electronic or opto-electronic device; and said composite film and said electronic or opto-electronic device, per se.
    • 复合膜的制造方法和电子或光电子器件的制造方法,所述方法包括以下步骤:(i)形成聚合物基底层; (ii)在至少一个方向上拉伸基底​​层; (iii)在高于基材层的聚合物的玻璃化转变温度但低于其熔融温度的温度的温度下,在约19至约75kg / m 2膜宽度的张力下的尺寸限制下的热定型; (iv)在高于基材层的聚合物的玻璃化转变温度但低于其熔融温度的温度下对薄膜进行热稳定化; (v)施加平面化涂料组合物,使得所述涂覆的基材的表面呈现小于0.6nm的Ra值和/或小于0.8nm的Rq值; 和(vi)通过高能气相沉积提供厚度为2至1000nm的无机阻挡层; 并且可选地(vii)在所述电子或光电子器件中提供包含所述聚合物基底层,所述平面化涂层和所述无机阻挡层作为基底的复合膜; 并且所述复合膜和所述电子或光电装置本身。