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1. 发明公开

KR1020130086177A 에칭 방법 및 에칭 장치 审中-实审
标题翻译：蚀刻方法和蚀刻装置
公开(公告)号：KR1020130086177A
公开(公告)日：2013-07-31
申请号：KR1020130006800
申请日：2013-01-22
申请人： 도쿄엘렉트론가부시키가이샤
发明人： 니시무라에이치 , 코츠기타다시 , 야마시타후미코
IPC分类号： H01L21/3065
CPC分类号： H01L21/67069 , B82Y10/00 , B82Y40/00 , G03F7/0002 , H01J37/32009 , H01J37/32091 , H01J37/32155 , H01J37/32706 , H01J2237/3343 , H01J2237/3348 , H01L21/0271 , H01L21/0332 , H01L21/0337 , H01L21/3065 , H01L21/31138
摘要： PURPOSE: An etching method and an etching apparatus are provided to be able to rationalize the etching condition of a periodical pattern formed by the self-organization of block copolymer. CONSTITUTION: A high frequency power is lower than the ion energy distribution generating an etching yield of a first polymer, sets frequency so that the ion energy is highly spread in the range higher than the ion energy distribution generating an etching yield of a second polymer, and supplies a high frequency power to a process chamber (10). A gas source (60) supplies gas to the process chamber. A control unit (88) produces plasma from the gas introduced into the process room by the high frequency power, and controls the periodic pattern on a subject held on a holding support by using the generated plasma. [Reference numerals] (60) Processing gas supply source; (68,40,42) Matching unit; (76) Exhaust device; (83) DC controller; (86) Filter circuit; (88) Control unit
摘要翻译：目的：提供一种蚀刻方法和蚀刻装置，以使得通过嵌段共聚物的自组织形成的周期性图案的蚀刻条件合理化。构成：高频功率低于产生第一聚合物的蚀刻产率的离子能量分布，设定频率使得离子能量在高于产生第二聚合物的蚀刻产率的离子能量分布的范围内高度扩散，并向处理室（10）提供高频功率。气体源（60）向处理室供应气体。控制单元（88）通过高频功率从引入到处理室的气体产生等离子体，并且通过使用产生的等离子体来控制保持在保持支架上的被检体上的周期性图案。（附图标记）（60）加工气体供给源; （68,40,42）配套单位; （76）排气装置; （83）直流控制器; （86）滤波电路; （88）控制单元

2. 发明公开

KR1020140063453A 플라즈마 처리 방법 및 플라즈마 처리 장치 审中-实审
标题翻译：等离子体处理方法和等离子体处理装置
公开(公告)号：KR1020140063453A
公开(公告)日：2014-05-27
申请号：KR1020130138483
申请日：2013-11-14
申请人： 도쿄엘렉트론가부시키가이샤
发明人： 니시무라에이치 , 코츠기타다시 , 소네타카시
IPC分类号： H01L21/3065 , H05H1/46
CPC分类号： H01L43/12 , H01J37/32449 , H01J37/32724
摘要： Provided are a plasma processing method and a plasma processing device, capable of improving properties of an MRAM element by preventing a leak current. The plasma processing method comprises etching a multi-layered material by using a plasma processing device. The device of the present invention includes a processing container and a gas supply part. The multi-layered material includes a lamination structure laminated in order of a first magnetic layer, an insulating layer, a second magnetic layer, and a mask material. The method includes a mask forming process and an etching process. In the mask forming process, a mask is formed on the second magnetic layer by etching the mask material. In the etching process, process gas is supplied to the processing container, plasma is generated, the second magnetic layer is etched by using the mask, and the etching is terminated on the insulating layer, wherein the second magnetic layer includes CoFeB. The insulating layer includes MgO. The processing gas includes H_2 and F or fluoric compound.
摘要翻译：提供了能够通过防止泄漏电流来改善MRAM元件的特性的等离子体处理方法和等离子体处理装置。等离子体处理方法包括通过使用等离子体处理装置来蚀刻多层材料。本发明的装置包括处理容器和气体供给部。多层材料包括按照第一磁性层，绝缘层，第二磁性层和掩模材料的顺序层叠的叠层结构。该方法包括掩模形成工艺和蚀刻工艺。在掩模形成工艺中，通过蚀刻掩模材料在第二磁性层上形成掩模。在蚀刻工序中，将处理气体供给至处理容器，生成等离子体，利用掩模蚀刻第二磁性层，在绝缘层上终止蚀刻，其中第二磁性层包括CoFeB。绝缘层包括MgO。处理气体包括H_2和F或氟化合物。

3. 发明授权

KR101858162B1 플라즈마 처리 방법 및 플라즈마 처리 장치 有权
公开(公告)号：KR101858162B1
公开(公告)日：2018-05-15
申请号：KR1020130138483
申请日：2013-11-14
申请人： 도쿄엘렉트론가부시키가이샤
发明人： 니시무라에이치 , 코츠기타다시 , 소네타카시
IPC分类号： H01L21/3065 , H05H1/46
CPC分类号： H01L43/12 , H01J37/32449 , H01J37/32724
摘要： 리크전류를방지하여 MRAM 소자의특성을향상시킬수 있는플라즈마처리방법및 플라즈마처리장치를제공한다. 플라즈마처리방법은, 플라즈마처리장치를이용하여다층막재료를에칭한다. 이장치는처리용기및 가스공급부를구비한다. 다층막재료는제 1 자성층, 절연층, 제 2 자성층및 마스크재료의순으로적층된적층구조를포함한다. 이방법은마스크를형성하는공정및 에칭공정을구비한다. 마스크를형성하는공정에서는, 마스크재료를에칭하여제 2 자성층상에마스크를형성한다. 에칭공정에서는, 처리용기로처리가스를공급하고, 플라즈마를발생시키고, 마스크를이용하여제 2 자성층을에칭하고, 절연층의표면에서에칭을종료한다. 여기서, 제 2 자성층은 CoFeB를포함한다. 절연층은 MgO을포함한다. 처리가스는 H및 F 혹은불소화합물을포함한다.

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