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1. 发明公开

KR1020130105465A 관통 레지스트 금속 도금을 위한 웨팅 전처리의 방법들 및 장치 审中-实审
标题翻译：用于通过金属镀层浸润预处理的方法和装置
公开(公告)号：KR1020130105465A
公开(公告)日：2013-09-25
申请号：KR1020130026323
申请日：2013-03-12
申请人： 노벨러스 시스템즈, 인코포레이티드
发明人： 버클류브라이언엘 , 메이어스티븐티 , 폰누스와미토마스에이 , 레쉬로버트 , 블랙맨브라이언 , 히글리더그
IPC分类号： H01L21/302 , H01L21/288
CPC分类号： H01L21/67028
摘要： PURPOSE: Wetting pretreatment methods for through resist metal plating and an apparatus thereof are provided to easily manufacture an integrated circuit by pre-wetting a semiconductor wafer. CONSTITUTION: A wafer substrate has features (1605). A degasser degases pre-wetting fluid (1615). A vacuum port forms a subatmospheric pressure within a process chamber. A wafer holder rotates the wafer substrate (1620). The process chamber includes a fluid inlet. [Reference numerals] (1605) Wafer substrate with a set of features recessed in a process chamber is provided; (1610) Pressure of the process chamber is reduced below the atmospheric pressure; (1615) Degasser degases pre-wetting fluid; (1620) Wafer holder rotates the wafer substrate; (1625) Below the atmospheric pressure, the wafer substrate rotating at a certain speed comes into contact with the degased pre-wetting fluid at a flow rate which is sufficient to remove particles of the recessed features; (AA) Start; (BB) End
摘要翻译：目的：通过抗蚀剂金属电镀的润湿预处理方法及其装置被提供以通过预浸湿半导体晶片容易地制造集成电路。构成：晶片衬底具有特征（1605）。脱气器脱湿预润湿流体（1615）。真空端口在处理室内形成低于大气压的压力。晶片保持器旋转晶片衬底（1620）。处理室包括流体入口。（1605）提供具有凹陷在处理室中的一组特征的晶片基板; （1610）处理室的压力降低到大气压以下; （1615）脱气机使预润湿液体脱模; （1620）晶片支架旋转晶片基板; （1625）低于大气压力，以一定速度旋转的晶片基板以与足够去除凹陷特征的颗粒的流速相接触脱模的预润湿流体; （AA）开始; （BB）结束

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