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1. 发明授权

KR100379621B1 ＭＯＳ 트랜지스터 게이트 절연막 및 그 제조방법 有权
标题翻译： MOS트랜지스터게이트절연막및그제조방법
公开(公告)号：KR100379621B1
公开(公告)日：2003-04-10
申请号：KR1020010041230
申请日：2001-07-10
申请人： 광주과학기술원
发明人： 황현상 , 이혜란 , 전상훈
IPC分类号： H01L21/336
摘要： PURPOSE: A gate insulating layer of an MOS transistor and a method for fabricating the same are provided to obtain effective thickness and reduce current leakage of the gate insulating layer by using a Dy-doped hafnium oxide layer as the gate insulating layer. CONSTITUTION: A nitride layer(120) is formed on a silicon substrate(110) by performing a thermal process under nitrogen atmosphere. A metal layer is formed on the nitride layer(120) by sputtering simultaneously an Hf target and a Dy target. The metal layer has thickness of 3 to 10nm. A Dy-doped hafnium oxide layer(130a) is formed by oxidizing the silicon substrate(110) including the metal layer under atmosphere of O2. Accordingly, a gate insulating layer is formed by stacking the nitride layer(120) and the Dy-doped hafnium oxide layer(130a), sequentially.
摘要翻译：目的：提供MOS晶体管的栅极绝缘层及其制造方法，以通过使用Dy掺杂的氧化铪层作为栅极绝缘层来获得有效厚度并降低栅极绝缘层的漏电流。构成：通过在氮气氛下进行热处理，在硅衬底（110）上形成氮化物层（120）。通过同时溅射Hf靶和Dy靶在氮化物层（120）上形成金属层。金属层具有3至10nm的厚度。 Dy掺杂的氧化铪层（130a）通过在O2气氛下氧化包括金属层的硅衬底（110）而形成。因此，通过依次堆叠氮化物层（120）和Dy掺杂的氧化铪层（130a）形成栅极绝缘层。

2. 发明公开

KR1020030005778A ＭＯＳ 트랜지스터 게이트 절연막 및 그 제조방법 有权
标题翻译： MOS晶体管的栅极绝缘层及其制造方法
公开(公告)号：KR1020030005778A
公开(公告)日：2003-01-23
申请号：KR1020010041230
申请日：2001-07-10
申请人： 광주과학기술원
发明人： 황현상 , 이혜란 , 전상훈
IPC分类号： H01L21/336
摘要： PURPOSE: A gate insulating layer of an MOS transistor and a method for fabricating the same are provided to obtain effective thickness and reduce current leakage of the gate insulating layer by using a Dy-doped hafnium oxide layer as the gate insulating layer. CONSTITUTION: A nitride layer(120) is formed on a silicon substrate(110) by performing a thermal process under nitrogen atmosphere. A metal layer is formed on the nitride layer(120) by sputtering simultaneously an Hf target and a Dy target. The metal layer has thickness of 3 to 10nm. A Dy-doped hafnium oxide layer(130a) is formed by oxidizing the silicon substrate(110) including the metal layer under atmosphere of O2. Accordingly, a gate insulating layer is formed by stacking the nitride layer(120) and the Dy-doped hafnium oxide layer(130a), sequentially.
摘要翻译：目的：提供MOS晶体管的栅极绝缘层及其制造方法，以通过使用Dy掺杂的铪氧化物层作为栅极绝缘层来获得有效的厚度并减少栅极绝缘层的漏电。构成：通过在氮气气氛下进行热处理，在硅衬底（110）上形成氮化物层（120）。通过同时溅射Hf靶和Dy靶，在氮化物层（120）上形成金属层。金属层的厚度为3〜10nm。通过在O2气氛下氧化包括金属层的硅衬底（110），形成Dy掺杂的氧化铪层（130a）。因此，依次层叠氮化物层（120）和Dy掺杂的氧化铪层（130a），形成栅极绝缘层。

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