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    • 3. 发明公开
    • 기판 처리 장치 및 기판 처리 방법
    • 基板处理装置和基板处理方法
    • KR1020130096185A
    • 2013-08-29
    • KR1020130015794
    • 2013-02-14
    • 가부시키가이샤 에바라 세이사꾸쇼
    • 이시이유가와사키히로유키나가오카겐이치이토겐야고데라마사코도미타히로시니시오카다케시
    • H01L21/302
    • B08B1/001H01L21/67046H01L21/67051H01L21/68728
    • PURPOSE: A substrate processing device and a substrate processing method are provided to improve a removal rate of impurities attached on the surface of a substrate by supporting one surface of the substrate using a hydrostatic support device in a non-contact way. CONSTITUTION: A scrubber (50) processes the surface of a substrate (W) by bringing a scrubbing member (61) into sliding contact with a first surface of the substrate. A hydrostatic support device (90) supports a second surface opposite to the first surface of the substrate by fluid pressure without contacting the substrate. A washing unit (27) washes the substrate processed by the scrubber. A drying unit (100) dries the washed substrate. The scrubber brings the scrubbing member into sliding contact with the first surface of the substrate while rotating the scrubbing member around a central axis of the scrubber. [Reference numerals] (AA) The center of a wafer
    • 目的:提供一种基板处理装置和基板处理方法,通过以非接触方式使用流体静力支持装置来支撑基板的一个表面来提高附着在基板表面上的杂质的去除率。 构成:洗涤器(50)通过使洗涤构件(61)与衬底的第一表面滑动接触来处理衬底(W)的表面。 流体静力支撑装置(90)通过流体压力而不与衬底接触地支撑与衬底的第一表面相对的第二表面。 洗涤单元(27)洗涤由洗涤器处理的基底。 干燥单元(100)干燥洗涤的基底。 洗涤器使洗涤构件与衬底的第一表面滑动接触,同时使洗涤构件围绕洗涤器的中心轴线旋转。 (附图标记)(AA)晶片的中心