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    • 7. 发明公开
    • 면 발광 레이저 어레이, 광학 주사 장치 및 화상 형성 장치
    • 表面发射激光阵列,光学扫描装置和图像形成装置
    • KR1020080063350A
    • 2008-07-03
    • KR1020087009631
    • 2007-08-20
    • 가부시키가이샤 리코
    • 사토순이치이또우아키히로스가와라사토루소우지히로요시
    • H01S5/183H01S5/42
    • H01S5/18B82Y20/00H01S5/0203H01S5/18313H01S5/18358H01S5/2213H01S5/3434H01S5/423H01S2302/00
    • A surface-emitting laser array includes a plurality of surface-emitting laser elements (1). Each surface-emitting laser element includes a first reflection layer (102) formed on a substrate (101), a resonator cavity (103, 104, 105) formed in contact with the first reflection layer and containing an active layer (104), and a second reflection layer (106, 107) formed over the first reflection layer and in contact with the resonator cavity. The second reflection layer contains a selective oxidation layer (107). The first reflection layer contains on the active layer side at least a low refractive index layer (1021), made e.g. of AlAs, having an oxidation rate equivalent to or larger than an oxidation rate of the selective oxidation layer (107) contained in the second reflection layer. The resonator cavity is made of an AlGaInPAs base material containing at least In. A bottom of a mesa structure is located below the selective oxidation layer and above the first reflection layer.
    • 表面发射激光器阵列包括多个表面发射激光元件(1)。 每个表面发射激光器元件包括形成在基板(101)上的第一反射层(102),与第一反射层接触形成并包含有源层(104)的谐振腔(103,104,105),以及 形成在所述第一反射层上并与所述谐振器腔接触的第二反射层(106,107)。 第二反射层包含选择氧化层(107)。 第一反射层在有源层一侧包含至少一个低折射率层(1021),例如制成。 的AlAs,其具有等于或大于包含在第二反射层中的选择性氧化层(107)的氧化速率的氧化速率。 谐振器腔由至少含有In的AlGaInPAs基材制成。 台面结构的底部位于选择性氧化层的下方并位于第一反射层之上。