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1. 发明公开

KR1020070095297A ＣＭＰ 연마 방법, ＣＭＰ 연마 장치, 및 반도체디바이스의 제조 방법 有权
标题翻译： CMP抛光方法，CMP抛光装置和用于生产半导体器件的工艺
公开(公告)号：KR1020070095297A
公开(公告)日：2007-09-28
申请号：KR1020077014161
申请日：2005-12-21
申请人： 가부시키가이샤 니콘 , 가부시키가이샤 에바라 세이사꾸쇼
发明人： 다카다쇼조 , 마츠오히사노리 , 이시카와아키라
IPC分类号： H01L21/304
CPC分类号： H01L21/02074 , C11D7/5013 , C11D7/5022 , C11D11/0047 , H01L21/76826 , H01L21/76828
摘要： This invention provides a CMP polishing method that, when a hydrophobilized porous material is used as an interlayer insulation film material for a semiconductor integrated circuit formed on a substrate, after washing and removal of a slurry and a polishing residue, which stay on the substrate surface, with a surfactant-containing washing liquid, an organic material permeated in the interlayer insulation film can be efficiently removed. When washing is carried out with a washing liquid containing a surfactant to remove the residual slurry and polishing residue, the organic material contained in the surfactant-containing washings is permeated in the interlayer insulation film (3). Thereafter, the substrate is washed with an organic solvent or an organic solvent-containing solution to wash away the organic material permeated in the interlayer insulation film (3). Although the interlayer insulation film (3) is in a hydrophobilized state, since the organic solvent is used for the washing, the organic material permeated in the interlayer insulation film (3) can be dissolved and washed away without being influenced by the hydrophobilized state.
摘要翻译：本发明提供一种CMP抛光方法，其中使用疏水化多孔材料作为形成在基板上的半导体集成电路的层间绝缘膜材料，在清洗和除去留在基板表面上的浆料和抛光残渣之后通过含有表面活性剂的洗涤液，可以有效地除去透过层间绝缘膜的有机材料。当用含有表面活性剂的洗涤液进行洗涤以除去残留的浆料和抛光残渣时，含有表面活性剂的洗涤液中含有的有机材料渗透在层间绝缘膜（3）中。此后，用有机溶剂或含有机溶剂的溶液洗涤基板，以冲洗渗透在层间绝缘膜（3）中的有机材料。尽管层间绝缘膜（3）处于疏水化状态，但是由于使用有机溶剂进行洗涤，渗透在层间绝缘膜（3）中的有机材料可以溶解并洗涤而不受疏水化状态的影响。

2. 发明授权

KR100893116B1 ＣＭＰ 연마 방법, ＣＭＰ 연마 장치, 및 반도체디바이스의 제조 방법 有权
标题翻译： CMP抛光方法，CMP抛光装置和用于生产半导体器件的方法
公开(公告)号：KR100893116B1
公开(公告)日：2009-04-14
申请号：KR1020077014161
申请日：2005-12-21
申请人： 가부시키가이샤 니콘 , 가부시키가이샤 에바라 세이사꾸쇼
发明人： 다카다쇼조 , 마츠오히사노리 , 이시카와아키라
IPC分类号： H01L21/304
CPC分类号： H01L21/02074 , C11D7/5013 , C11D7/5022 , C11D11/0047 , H01L21/76826 , H01L21/76828
摘要： 세정액(계면활성제를 함유하는 것이 바람직함)으로 세정하여, 잔류하는 슬러리와 연마 잔류물을 제거하면, 계면활성제를 함유하는 세정액 중의 유기물이 층간 절연막(3) 속으로 스며든다. 그래서, 이 후, 유기 용매 또는 유기 용매를 함유한 용액으로 기판을 세정하고, 층간 절연막(3) 속에 스며든 유기물을 세정 제거한다. 층간 절연막(3)은 소수화 처리가 실시되고 있지만 유기 용매이기 때문에, 그것에 영향을 받지 않고 층간 절연막(3) 속으로 스며들어 유기물을 용해하고, 세정 제거할 수 있다. 그 후, 기판(1)을 건조시켜 표면에 부착된 유기 용매 또는 유기 용매를 함유한 용액을 제거한다.

3. 发明公开

KR1020080058510A ＣＭＰ 연마 방법, ＣＭＰ 연마 장치, 및 반도체디바이스의 제조 방법 无效
标题翻译： CMP抛光方法，CMP抛光装置和用于生产半导体器件的工艺
公开(公告)号：KR1020080058510A
公开(公告)日：2008-06-25
申请号：KR1020087014014
申请日：2005-12-21
申请人： 가부시키가이샤 니콘 , 가부시키가이샤 에바라 세이사꾸쇼
发明人： 다카다쇼조 , 마츠오히사노리 , 이시카와아키라
IPC分类号： H01L21/304
CPC分类号： H01L21/02074 , C11D7/5013 , C11D7/5022 , C11D11/0047 , H01L21/76826 , H01L21/76828
摘要： This invention provides a CMP polishing method that, when a hydrophobilized porous material is used as an interlayer insulation film material for a semiconductor integrated circuit formed on a substrate, after washing and removal of a slurry and a polishing residue, which stay on the substrate surface, with a surfactant-containing washing liquid, an organic material permeated in the interlayer insulation film can be efficiently removed. When washing is carried out with a washing liquid containing a surfactant to remove the residual slurry and polishing residue, the organic material contained in the surfactant-containing washings is permeated in the interlayer insulation film (3). Thereafter, the substrate is washed with an organic solvent or an organic solvent-containing solution to wash away the organic material permeated in the interlayer insulation film (3). Although the interlayer insulation film (3) is in a hydrophobilized state, since the organic solvent is used for the washing, the organic material permeated in the interlayer insulation film (3) can be dissolved and washed away without being influenced by the hydrophobilized state.
摘要翻译：本发明提供一种CMP抛光方法，其中使用疏水化多孔材料作为形成在基板上的半导体集成电路的层间绝缘膜材料，在清洗和除去留在基板表面上的浆料和抛光残渣之后通过含有表面活性剂的洗涤液，可以有效地除去透过层间绝缘膜的有机材料。当用含有表面活性剂的洗涤液进行洗涤以除去残留的浆料和抛光残渣时，含有表面活性剂的洗涤液中含有的有机材料渗透在层间绝缘膜（3）中。此后，用有机溶剂或含有机溶剂的溶液洗涤基板，以冲洗渗透在层间绝缘膜（3）中的有机材料。尽管层间绝缘膜（3）处于疏水化状态，但是由于使用有机溶剂进行洗涤，渗透在层间绝缘膜（3）中的有机材料可以溶解并洗涤而不受疏水化状态的影响。

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