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    • 1. 发明公开
    • 테트라메틸 암모늄 하이드록사이드를 분해하는 신규한바실러스 세레우스 IBN-H4 및 전기 균주를 이용한폐수처리방법
    • 用于分解三甲基氢氧化铵(TMAH)的新型巴豆酵母IBN-H4和使用菌株进行废水处理的方法
    • KR1020020009059A
    • 2002-02-01
    • KR1020000042272
    • 2000-07-22
    • (주)아이비진
    • 이대상이미경신철수윤정환염도영이정기박기돈최호준구본탁강기정
    • C12N1/20
    • PURPOSE: Novel bacillus cereus IBN-H4 (KCTC 0835BP) for decomposing trimethyl ammonium hydroxide (TMAH), which is useful for treating wastewater from etching process of silicon surface in semiconductor manufacturing facilities. CONSTITUTION: The bacillus cereus IBN-H4 (KCTC 0835BP) is shake-cultured in a culture medium containing (NH4)2SO4 3g/L, trace elements such as H3BO3 0.3g, CoSO 4·7H2O 0.2g, ZnSO4·H2O 0.1g, MnCl2·H2O 0.03g, NaMoO4·H2O 0.03g, NiCl2·H2O 0.02g, CuSO4·H2O 0.01g, FeSO4·H2O 20g, CaCl2·H2O 10g/L, MgSO4·7H2O(40%) 2mL/L, 1M phosphate buffer solution (pH 7), 1% TMAH acting as a carbon source at 30°C for 72hrs. Triple test (BOD) of the obtained culture solution show a BOD removal ratio higher than 90%. To culture the bacillus cereus IBN-H4 (KCTC 0835BP), such methods as batch culture, fed-batch culture, and continuous culture are preferably used.
    • 目的:分解三甲基氢氧化铵(TMAH)的新型蜡状芽孢杆菌IBN-H4(KCTC 0835BP),可用于处理半导体制造设施中硅表面蚀刻工艺的废水。 构成:将含有(NH 4)2 SO 4 3g / L的培养基,H3BO3 0.3g,CoSO 4·7H 2 O 0.2g,ZnSO 4·H 2 O 0.1g等微量元素的培养基中的芽孢杆菌IBN-H4(KCTC 0835BP) MnCl2·H2O 0.03g,NaMoO4·H2O 0.03g,NiCl2·H2O 0.02g,CuSO4·H2O 0.01g,FeSO4·H2O 20g,CaCl2·H2O 10g / L,MgSO4·7H2O(40%)2mL / L,1M磷酸盐缓冲液 溶液(pH7),1%TMAH作为碳源在30℃下72小时。 所得培养液的三重试验(BOD)显示BOD去除率高于90%。 为了培养蜡状芽孢杆菌IBN-H4(KCTC 0835BP),优选使用分批培养,补料分批培养和连续培养等方法。
    • 2. 发明公开
    • 테트라메틸 암모늄 하이드록사이드를 분해하는 신규한아시네토박터 속 IBN-H7 및 전기 균주를 이용한폐수처리방법
    • 新款ACINETOBACTER SP 用于分解三甲基氢氧化铵(TMAH)的IBN-H7以及使用该应变的废水处理方法
    • KR1020020009060A
    • 2002-02-01
    • KR1020000042273
    • 2000-07-22
    • (주)아이비진
    • 이대상이미경신철수윤정환염도영이정기박기돈최호준구본탁강기정
    • C12N1/20
    • PURPOSE: Novel acinetobacter sp. IBN-H7 (KCTC 0836BP) for decomposing trimethyl ammonium hydroxide (TMAH), which is useful for treating wastewater from etching process of silicon surface in semiconductor manufacturing facilities. CONSTITUTION: The acinetobacter sp. IBN-H7 (KCTC 0836BP) is shake-cultured in a culture medium containing (NH4)2SO4 3g/L, trace elements such as H3BO3 0.3g, CoSO 4·7H2O 0.2g, ZnSO4·H2O 0.1g, MnCl2·H2O 0.03g, NaMoO4·H2O 0.03g, NiCl2·H2O 0.02g, CuSO4·H2O 0.01g, FeSO4·H2O 20g, CaCl2·H2O 10g/L, MgSO4·7H2O(40%) 2mL/L, 1M phosphate buffer solution (pH 7), 1% TMAH acting as a carbon source at 30°C for 72hrs. Triple test (BOD) of the obtained culture solution show a BOD removal ratio higher than 90%. To culture the acinetobacter sp. IBN-H7 (KCTC 0836BP), such methods as batch culture, fed-batch culture, and continuous culture are preferably used. In the wastewater treatment method, one strain selected from kluvyeromyces delphinesis IBN-H1(KCTC 0834BP) or bacillus cereus IBN-H4(KCTC 0835BP) is added.
    • 目的:新型不动杆菌属 用于分解三甲基氢氧化铵(TMAH)的IBN-H7(KCTC 0836BP),其可用于处理半导体制造设施中硅表面的蚀刻工艺的废水。 构成:不动杆菌属 将IBN-H7(KCTC 0836BP)在含有(NH 4)2 SO 4 3g / L,痕量元素如H3BO3 0.3g,CoSO 4·7H 2 O 0.2g,ZnSO 4·H 2 O 0.1g,MnCl 2·H 2 O 0.03g ,NaMoO4·H2O 0.03g,NiCl2·H2O 0.02g,CuSO4·H2O 0.01g,FeSO4·H2O 20g,CaCl2·H2O 10g / L,MgSO4·7H2O(40%)2mL / L,1M磷酸盐缓冲溶液(pH7) ,1%TMAH在30℃下作为碳源72小时。 所得培养液的三重试验(BOD)显示BOD去除率高于90%。 培养不动杆菌属 IBN-H7(KCTC 0836BP)优选使用分批培养,补料分批培养和连续培养等方法。 在废水处理方法中,加入了选自德氏梭菌IBN-H1(KCTC 0834BP)或蜡状芽孢杆菌IBN-H4(KCTC 0835BP)的一种菌株。
    • 3. 发明公开
    • 테트라메틸 암모늄 하이드록사이드를 분해하는 신규한클루이베로마이세스 델펜시스 IBN-H1 및 전기 균주를이용한 폐수처리방법
    • 新型KLUYVEROMYCES DELPHENSIS IBN-H1分解四甲基氢氧化铵和使用该方法处理废水的方法
    • KR1020020008356A
    • 2002-01-30
    • KR1020000042271
    • 2000-07-22
    • (주)아이비진
    • 이대상이미경신철수윤정환염도영이정기박기돈최호준구본탁강기정
    • C12N1/16
    • PURPOSE: Provided are novel Kluyveromyces delphensis IBN-H1 decomposing tetramethyl ammonium hydroxide (TMAH) and a method for treating waste water using the same strain. TMAH is used in etching the surface of the silicon, and is accordingly contained in the waste water of a semiconductor plant. It is hardly decomposed and shows toxicity. This waste water containing TMAH is treated by the above novel strain eliminating 90% of TMAH therefrom. The process can be used in the industry as an environment-friendly waste water treatment. CONSTITUTION: The strain is prepared by: culturing strains in the waste water of semiconductor plants and culturing again the above strains in the medium containing TMAH; selecting 7 strains showing resistance to TMAH; and naming them as IBN H- 1-IBN H-7 and choosing IBN H-1, IBN H-4 and IBN H-7, which have excellent TMAH decomposability. They are identified as a novel strain belonging to Kluyveromyces delphensis, Bacillus cereus and Acinetobacter sp. by BIOLOG system, MIDI and partial base sequence of 16s RNA and named Kluyveromyces delphensis IBN H-1 (KCTC 0834BP), Bacillus cereus IBN H-4 (KCTC 0835BP) and Acinetobacter sp. IBN H-7 (KCTC 0836PB). The biological treatment of the waste water with TMAH is carried out by a batch culture, more preferably fed-batch culture or continuous culture.
    • 目的:提供新型克氏疏螺旋体IBN-H1分解四甲基氢氧化铵(TMAH)和使用相同菌株处理废水的方法。 TMAH用于蚀刻硅的表面,因此被包含在半导体工厂的废水中。 它几乎不分解并显示毒性。 含有TMAH的废水由上述新型菌株处理,消除了90%的TMAH。 该工艺可作为环保废水处理在工业中使用。 构成:菌株通过:在半导体植物的废水中培养菌株,并在含有TMAH的培养基中再次培养上述菌株; 选择显示耐TMAH的7株; 并命名为IBN H-1-IBN H-7,并选择具有优异TMAH分解性的IBN H-1,IBN H-4和IBN H-7。 它们被鉴定为属于德国克鲁维酵母(Kluyveromyces delphensis),蜡样芽胞杆菌(Bacillus cereus)和不动杆菌属(Acinetobacter sp。)的新菌株。 通过BIOLOG系统,16S RNA的MIDI和部分碱基序列,命名为Kluyveromyces delphensis IBN H-1(KCTC 0834BP),蜡状芽孢杆菌IBN H-4(KCTC 0835BP)和不动杆菌属。 IBN H-7(KCTC 0836PB)。 使用TMAH对废水的生物处理通过分批培养进行,更优选补料分批培养或连续培养。